Actinic ray-sensitive or radiation-sensitive composition, method for producing actinic ray-sensitive or radiation-sensitive composition, pattern forming method, and method for manufacturing electronic device

Patent metadata

Field	Value
Publication number	US-11460769-B2
Application number	US-201816109868-A
Country	US
Kind code	B2
Filing date	Aug 23, 2018
Priority date	Mar 24, 2016
Publication date	Oct 4, 2022
Grant date	Oct 4, 2022

Abstract

An actinic ray-sensitive or radiation-sensitive composition, and an actinic ray-sensitive or radiation-sensitive composition obtained by the method for producing an actinic ray-sensitive or radiation-sensitive composition each contain a cation having a metal atom, and a ligand, in which a value of σ represented by Equation (1) is 2.2 or less. A pattern forming method and the method for manufacturing an electronic device each use the actinic ray-sensitive or radiation-sensitive composition.

σ
=

∑

k
=
1

N

⁢

{

(

μ
-

X
k

)

2

×

y
k

}

(
1
)

First claim

What is claimed is:

1. An actinic ray-sensitive or radiation-sensitive composition comprising:
a cation having at least one metal atom selected from the group consisting of hafnium, zirconium and tin; and
a ligand,
wherein a value of σ is represented by Equation (1),
the metal atom having the highest mass content ratio in the cation in the composition is hafnium, zirconium, or tin,
wherein, the value of σ is 1.2 or less for hafnium,
wherein, the value of σ is 1.6 or less for zirconium,
wherein, the value of σ is 2.0 or less for tin,
and wherein σ>0,

σ
=

∑

k
=
1

N

⁢

{

(

μ
-

X
k

)

2

×

y
k

}

(
1
)

in Equation (1),
N represents the number of the species of isotopes of the metal atom having the highest mass content ratio, and for N species of isotopes, the mass numbers are represented by x 1 , x 2 , x 3 , . . . , and x N in order from the smallest to the largest, and the existence ratios corresponding to these mass numbers are represented by y 1 , y 2 , y 3 , . . . , and y N , respectively, with y 1 +y 2 +y 3 + . . . +y N =1, wherein N is 5 for zirconium, N is 6 for hafnium, and N is 10 for tin,
the average mass number μ is represented by Equation (2),
k represents an integer of 1 to N,
x k represents the mass number of the k-th isotope in order from the smallest mass number,
y k represents the existence ratio of the k-th isotope in order from the smallest mass number,

μ
=

∑

i
=
1

N

⁢

(

x
i

×

y
i

)

(
2
)

in Equation (2),
N represents the number of the species of isotopes of the metal atom having the highest mass content ratio,
i represents an integer of 1 to N,
x i represents the mass number of the i-th isotope in order from the smallest mass number, and
y i represents the existence ratio of the i-th isotope in order from the smallest mass number.

2. The actinic ray-sensitive or radiation-sensitive composition according to claim 1 , further comprising:
a counter anion, and
water,
wherein the cation having the metal atom having the highest mass content ratio is a suboxide cation of the metal atom and
the ligand is a peroxide-based ligand.

3. The actinic ray-sensitive or radiation-sensitive composition according to claim 2 , wherein the metal atom having the highest mass content ratio is tin.

4. The actinic ray-sensitive or radiation-sensitive composition according to claim 2 ,
wherein the metal atom having the highest mass content ratio is hafnium.

5. The actinic ray-sensitive or radiation-sensitive composition according to claim 2 , wherein the metal atom having the highest mass content ratio is zirconium and the value of σ is 1.2 or less.

6. The actinic ray-sensitive or radiation-sensitive composition according to claim 2 , wherein the metal atom having the highest mass content ratio is tin and the value of σ is 1.8 or less.

7. The actinic ray-sensitive or radiation-sensitive composition according to claim 1 , further comprising:
an organic solvent,
wherein the ligand is an organic ligand.

8. The actinic ray-sensitive or radiation-sensitive composition according to claim 7 , wherein the metal atom having the highest mass content ratio is tin.

9. The actinic ray-sensitive or radiation-sensitive composition according to claim 7 ,
wherein the metal atom having the highest mass content ratio is hafnium.

10. The actinic ray-sensitive or radiation-sensitive composition according to claim 7 , wherein the metal atom having the highest mass content ratio is zirconium and the value of σ is 1.2 or less.

11. The actinic ray-sensitive or radiation-sensitive composition according to claim 1 , wherein the metal atom having the highest mass content ratio is hafnium or zirconium.

12. The actinic ray-sensitive or radiation-sensitive composition according to claim 1 , wherein the metal atom having the highest mass content ratio is tin.

13. The actinic ray-sensitive or radiation-sensitive composition according to claim 1 ,
wherein the metal atom having the highest mass content ratio is hafnium.

14. The actinic ray-sensitive or radiation-sensitive composition according to claim 1 , wherein the metal atom having the highest mass content ratio is zirconium and the value of σ is 1.2 or less.

15. The actinic ray-sensitive or radiation-sensitive composition according to claim 1 , wherein the metal atom having the highest mass content ratio is tin and the value of σ is 1.8 or less.

16. A method for producing the actinic ray-sensitive or radiation-sensitive composition according to claim 1 , comprising:
purifying the cation having the metal atom by gel filtration chromatography.

17. The method for producing an actinic ray-sensitive or radiation-sensitive composition according to claim 16 , further comprising a step of measuring the existence ratios of isotopes of the metal atom in the cation by mass spectrometry.

18. A pattern formi

Assignees

• Fujifilm Corp

Inventors

• Nihashi Wataru
• Tsubaki Hideaki

Classifications

• G03F7/2006

  using coherent light; using polarised light · CPC title

• G03F7/38

  Treatment before imagewise removal, e.g. prebaking {(G03F7/265 takes precedence)} · CPC title

• G03F7/0043

  Chalcogenides; Silicon, germanium, arsenic or derivatives thereof; Metals, oxides or alloys thereof (G03F7/0044 takes precedence) · CPC title

• G03F7/0042 Primary

  with inorganic or organometallic light-sensitive compounds not otherwise provided for, e.g. inorganic resists (G03F7/075 takes precedence) · CPC title

• G03F7/162

  Coating on a rotating support, e.g. using a whirler or a spinner · CPC title