Optical modulator robust to fabrication errors through an RF electrical crossing

Patent metadata

Field	Value
Publication number	US-11460724-B2
Application number	US-202016944809-A
Country	US
Kind code	B2
Filing date	Jul 31, 2020
Priority date	Apr 28, 2017
Publication date	Oct 4, 2022
Grant date	Oct 4, 2022

Abstract

An optical modulator includes multiple segments including modulator segments and a Radio Frequency (RF) crossing segment where RF lines extending a length of the modulator cross one another. The present disclosure includes optimization of one or more of a geometry of the RF crossing and a location of the RF crossing segment along the length. The geometry is selected so that the RF crossing segment appears as another segment having similar characteristics as modulator segments. The location of the RF crossing segment is selected to balance out fabrication error and phase efficiency.

First claim

What is claimed is:

1. An optical modulator comprising:
a first Radio Frequency (RF) line and a second RF line;
an optical waveguide along a length of the modulator with an input and an output; and
a plurality of segments along the length including a first set of pn junctions, an RF line crossing, and a second set of pn junctions, wherein the first set of pn junctions and the second set of pn junctions have an inversion of their respective orientation at the RF line crossing, and wherein the RF line crossing is located at a crossing segment that is not a center segment of the plurality of segments,
wherein each of the first RF line and the second RF line extend along the length and cross one another at the RF line crossing, and
wherein one or more segments in the first set of pn junctions has a different orientation from one another, and one or more segments in the second set of pn junctions has a different orientation from one another.

2. The optical modulator of claim 1 , wherein a location of the crossing segment is based on an average loss or sum of voltages over a band of interest.

3. The optical modulator of claim 1 , wherein a location of the crossing segment is selected based on RF imbalance caused by the RF line crossing.

4. The optical modulator of claim 1 , wherein the crossing segment is located closer to the input than the output along the length.

5. The optical modulator of claim 1 , wherein a geometry of the RF line crossing includes any of a length of unloaded lines, a width of the unloaded lines, metal features around the RF line crossing, and an angle of crossing lines connected to respective unloaded lines, and wherein part or all of the geometry is selected such that one or more characteristics of the crossing segment are similar to corresponding one or more characteristics of modulator segments of the plurality of segments.

6. The optical modulator of claim 5 , wherein the one or more characteristics include any capacitance, inductance, impedance, propagation speed, and dielectric constant.

7. The optical modulator of claim 1 , wherein each segment in the first set of pn junctions has a same orientation, and each segment in the second set of pn junctions has a same orientation different from the orientation of the first set of pn junctions.

8. The optical modulator of claim 1 , wherein the respective orientation in each of the first set of pn junctions and the second set of pn junctions is one of a nppn configuration and a pnnp configuration.

9. The optical modulator of claim 1 , wherein each segment except the crossing segment of the plurality of segments is connected to the first RF line and the second RF line.

10. An optical modulator comprising:
a first Radio Frequency (RF) line and a second RF line;
an optical waveguide along a length of the modulator with an input and an output; and
a plurality of segments along the length including a first set of pn junctions, an RF line crossing, and a second set of pn junctions, wherein the first set of pn junctions and the second set of pn junctions have an inversion of their respective orientation at the RF line crossing, and wherein the RF line crossing is located at a crossing segment that is not a center segment of the plurality of segments,
wherein each of the first RF line and the second RF line extend along the length and cross one another at the RF line crossing, and
wherein each segment of the plurality of segments has about a same length, and wherein the RF line crossing has the same length.

11. The optical modulator of claim 10 , wherein a location of the crossing segment is based on an average loss or sum of voltages over a band of interest.

12. The optical modulator of claim 10 , wherein a location of the crossing segment is selected based on RF imbalance caused by the RF line crossing.

13. The optical modulator of claim 10 , wherein the crossing segment is located closer to the input than the output along the length.

14. The optical modulator of claim 10 , wherein a geometry of the RF line crossing includes any of a length of unloaded lines, a width of the unloaded lines, metal features around the RF line crossing, and an angle of crossing lines connected to respective unloaded lines, and wherein part or all of the geometry is selected such that one or more characteristics of the crossing segment are similar to corresponding one or more characteristics of modulator segments of the plurality of segments.

15. The optical modulator of claim 14 , wherein the one or more characteristics include any capacitance, inductance, impedance, propagation speed, and dielectric constant.

16. The optical modulator of claim 10 , wherein each segment in the first set of pn junctions has a same orientation, and each segment in the second set of pn junctions has a same orientation different from the orientation of the first set of pn junctions.

17. The optical modulator of claim 10 , wherein the respective orientation in each of the first set of pn junctions and the second set of pn junctions is one of a nppn configuration and a pnnp configuration.

18. The optical modulator of claim 10 , wherein each segment except the crossing segment of the plurality of segments is connected to the first RF line and the second RF line.

Assignees

• Ciena Corp

Inventors

• Latrasse Christine
• Delisle-Simard Alexandre
• Poulin Michel
• Betty Ian
• Khajooeizadeh Arash
• Vitic Michael

Classifications

• G02F1/2257

  the optical waveguides being made of semiconducting material · CPC title

• G02F1/025 Primary

  in an optical waveguide structure (G02F1/017, {G02F1/2257} take precedence) · CPC title

• G02F1/0152

  using free carrier effects, e.g. plasma effect · CPC title

• G02B6/12002

  Three-dimensional structures · CPC title

• G02B2006/12061

  Silicon · CPC title