Optoelectronic semiconductor chip

Patent metadata

Field	Value
Publication number	US-11456404-B2
Application number	US-201816758401-A
Country	US
Kind code	B2
Filing date	Oct 25, 2018
Priority date	Oct 26, 2017
Publication date	Sep 27, 2022
Grant date	Sep 27, 2022

Abstract

An optoelectronic semiconductor chip may include a semiconductor body, a first and second contact element, a chip carrier, an electrically conductive contact layer, an electrically conductive supply layer, an insulating layer between the contact layer and the supply layer, and at least one electrically conductive feed-through element embedded in the insulating layer. The feed-through element(s) may electrically connect the supply layer to the contact layer. A quantity and/or size of the feed-through elements may be greater on a second side of the semiconductor body opposite to the first side than on the first side.

First claim

The invention claimed is:

1. An optoelectronic semiconductor chip comprising:
a semiconductor body comprising a first semiconductor region and a second semiconductor region;
a first and second contact element configured to electrically contact the semiconductor body;
a chip carrier where the semiconductor body and the first contact element and the second contact element are arranged thereon; wherein the semiconductor body and the first contact element and the second contact element are arranged next to each other, the first contact element and the second contact element being arranged on a first side of the semiconductor body;
an electrically conducting contact layer arranged on a first main surface of the semiconductor body, said first main surface facing the chip carrier;
an electrically conducting supply layer arranged on the side of the electrically conducting contact layer facing away from the semiconductor body; wherein the electrically conducting supply layer is connected to the first contact element;
an insulation layer arranged between the electrically conducting contact layer and the electrically conducting supply layer; wherein the insulation layer electrically insulates the electrically conducting contact layer from the electrically conducting supply layer; and
at least one electrically conductive feed-through element embedded in the insulation layer and electrically connecting the electrically conducting supply layer to the electrically conducting contact layer, wherein a quantity and/or size of the at least one electrically conductive feed-through elements is greater on a second side of the semiconductor body opposite the first side than on the first side, wherein the at least one electrically conductive feed-through element comprises a same material as the electrically conductive supply layer.

2. The optoelectronic semiconductor chip as claimed in claim 1 , wherein the electrically conducting supply layer is a contiguous layer with largely homogeneous thickness.

3. The optoelectronic semiconductor chip as claimed in claim 1 , wherein the electrically conducting contact layer is a contiguous layer of homogeneous thickness.

4. The optoelectronic semiconductor chip as claimed in claim 1 , wherein the at least one feed-through element has the geometrical shape of a cylinder or prism.

5. The optoelectronic semiconductor chip as claimed in claim 1 , wherein the at least one electrically conductive feed-through element comprises a plurality of electrically conductive feed-through elements arranged offset from each other in rows, the size of the plurality of electrically conductive feed-through elements in a row increasing from the first to the second side of the semiconductor body.

6. The optoelectronic semiconductor chip as claimed in claim 1 , wherein the at least one electrically conductive feed-through element comprises a plurality of electrically conductive feed-through elements arranged offset from each other in rows, the size of the plurality of electrically conductive feed-through elements in a row being constant from a third side to a fourth side of the semiconductor body opposite the third side.

7. The optoelectronic semiconductor chip as claimed in claim 1 , wherein the at least one electrically conductive feed-through element consists of a single feed-through element with a planar design arranged on the second side of the semiconductor body; and wherein the single feed-through element extends along a side edge of the semiconductor body bordering the first main surface.

8. The optoelectronic semiconductor chip as claimed in claim 7 , wherein the feed-through element has a strip-like design.

9. The optoelectronic semiconductor chip as claimed in claim 1 , wherein the at least one electrically conductive feed-through element comprises a plurality of electrically conductive strip-shaped feed-through elements that extend from a third side to a fourth side of the semiconductor body opposite the third side, a width of the plurality of feed-through elements increasing from the first side to the second side of the semiconductor body.

10. The optoelectronic semiconductor chip as claimed in claim 9 , further comprising a plurality of vias where each via of the plurality of vias extends from the chip carrier through the electrically conducting supply layer, through the insulation layer, through the electrically conducting contact layer and the first semiconductor region into the second semiconductor region.

11. The optoelectronic semiconductor chip as claimed in claim 10 , further comprising a connection layer electrically connecting the second contact element to the plurality of vias.

12. The optoelectronic semiconductor chip as claimed in claim 11 , wherein the connection layer comprises a thickness greater than a thickness of the electrically conducting supply layer.

13. The optoelectronic semiconductor chip as claimed in claim 10 , the feed-through elements being arranged in the spaces between the plurality of vias.

14. The optoelectronic semiconductor chip as claimed in claim 1 , the at least one electrically conductive feed-through element comprises the same material as the electrically conducting supply layer.

15. The optoelectronic semiconductor chip as claimed in claim 1 , wherein the insulation layer comprises a multi-layer structure with at least two sublayers of different types.

16. The optoelectronic semiconductor chip as claimed in claim 1 , wherein the supply layer comprises a metal.

17. The optoelectronic semiconductor chip as claimed in claim 1 , wherein the supply layer consists of a metal.

18. The optoelectronic semiconductor chip as claimed in claim 1 , wherein the insulation layer is arranged within the supply layer.

Assignees

• Osram Oled Gmbh

Inventors

• Enzmann Roland Heinrich
• Zini Lorenzo
• Eichinger Vanessa
• Barthel Stefan

Classifications

• H01L33/382

  Electricity · mapped topic

• H01L33/62 Primary

  Electricity · mapped topic

• H10H20/8312

  extending at least partially through the bodies · CPC title

• H10H20/857 Primary

  Interconnections, e.g. lead-frames, bond wires or solder balls · CPC title

• H10H20/831

  characterised by their shape · CPC title