Method of manufacturing a microelectronic device having an array of inclined reliefs

US11456403B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-11456403-B2
Application numberUS-202016951357-A
CountryUS
Kind codeB2
Filing dateNov 18, 2020
Priority dateNov 18, 2019
Publication dateSep 27, 2022
Grant dateSep 27, 2022

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A method is provided for producing a microelectronic device having a subsequent grating of reliefs of which at least one wall is slanted, the method including providing a structure including a base, and an initial grating of reliefs, each relief having at least one proximal end in contact with the base, a distal end, and at least one wall extending between the proximal end and the distal end; and laying the reliefs of the initial grating on one another, by application of at least one stress on the structure, such that walls facing two adjacent reliefs come into contact, thus generating at least one subsequent grating of reliefs of which at least one wall is slanted.

First claim

Opening claim text (preview).

The invention claimed is: 1. A method for producing a microelectronic device having a subsequent grating of reliefs of which at least one wall is slanted, the method comprising: providing a structure comprising: a base, and an initial grating of reliefs, each relief having at least one proximal end in contact with the base, a distal end, and at least one wall extending between the proximal end and the distal end; and laying the reliefs of the initial grating on one another, by application of at least one stress on the structure, such that walls facing two adjacent reliefs come into contact, thus generating at least one subsequent grating of reliefs of which at least one wall is slanted. 2. The method according to claim 1 , wherein the microelectronic device forms a mold for nanometric printing. 3. The method according to claim 1 , wherein providing the structure comprises a step of nanoprinting for producing the initial grating of reliefs. 4. The method according to claim 1 , wherein providing the structure comprises a step of optical or electronic lithography, for producing the initial grating of reliefs. 5. The method according to claim 1 , wherein the at least one stress comprises or is a force taken from among a contact force and a non-contact force. 6. The method according to claim 1 , wherein parameters of the initial grating, comprising in particular a form of the reliefs, a step of the initial grating and a material of the initial grating, are chosen such that after the laying of the reliefs, each relief has at least one wall slanted by an angle different from 90° with respect to a plane wherein a face of the base mainly extends. 7. The method according to claim 1 , wherein the reliefs of the initial grating form, before the step of laying, at least one among: lines extending mainly in a direction parallel to a plane in which is mainly comprised a face of the base of the structure from which the reliefs extend, and studs with a polygonal or circular section, the section being taken according to the plane. 8. The method according to claim 1 , wherein the laying the reliefs comprises applying at least one contact force on at least one among the base of the structure and the reliefs, and applying a complementary force or a reaction force on the other among the base of the structure and the reliefs, and so as to cause a relative displacement between the base of the structure and the reliefs. 9. The method according to claim 8 , wherein the at least one contact force of the structure has: a component substantially parallel to a plane in which is mainly comprised a face of the base from which the reliefs extend, and a component substantially perpendicular to the plane. 10. The method according to claim 8 , wherein the at least one contact force is applied on the base of the structure when the distal ends of the reliefs of the structure are in contact with an intermediate substrate, the intermediate substrate having a face configured to come into contact with distal ends of the reliefs. 11. The method according to claim 10 , wherein the face comprises a film having a friction coefficient less than or equal to 0.01. 12. The method according to claim 1 , wherein the laying the reliefs comprises applying a stream of fluid on the reliefs of the initial grating. 13. A method for producing at least one grating of slanted patterns on a layer, the method comprising: providing a mold for nanometric printing by implementing the method according to claim 2 ; having the subsequent grating of slanted reliefs penetrate into the layer in order to form on a first face of the layer a grating of patterns according to the slanted reliefs; and detaching the mold from the layer. 14. The method according to claim 13 , wherein the patterns each have at least one flank slanted by an angle different from 90° with respect to a plane in which a second face of the layer extends mainly opposite the first face. 15. The method according to claim 13 , wherein the laying the reliefs of the initial structure of the mold comprises applying at least one contact force on at least one among the base of the structure and the reliefs, and applying a complementary force or a reaction force on the other among the base of the structure and the reliefs and so as to cause a relative displacement between the base of the structure and the reliefs, and wherein the at least one contact force of the structure has: a component substantially parallel to a plane in which is mainly comprised a face of the base from which the reliefs extend, and a component substantially perpendicular to the plane. 16. The method according to claim 15 , wherein the at least one contact force is applied on the base of the structure when the distal ends of the reliefs of the structure are in contact with an intermediate substrate, the intermediate substrate having a face configured to come into contact with distal ends of the reliefs. 17. The method according to claim 16 , wherein the face comprises a film having a friction coefficient less than or equal to 0.01. 18. The method according to claim 15 , wherein the at least one contact force is applied on the base of the mold after penetration of a portion at least of the initial grating of reliefs into the layer. 19. The method according to claim 18 , wherein the at least one contact force is applied before a complete penetration of the reliefs of the mold into the layer. 20. The method according to claim 18 , wherein: the reliefs have, before laying, a height measured between the distal end of the reliefs and a face of the base of the mold from which the reliefs extend, and the at least one contact force is applied on the base of the mold when a height of the reliefs having penetrated into the layer is comprised between 0.1 and 0.7 times the height measured of the reliefs. 21. The method according to claim 13 , wherein the laying the reliefs of the initial grating of the mold comprises applying a stream of fluid on the reliefs of the mold. 22. The method according to claim 13 , wherein the reliefs of the mold have a basic material and a coating that covers the basic material, the coating having a friction coefficient less than that of the basic material. 23. The method according to claim 13 , further comprising, after having detached the mold from the layer, a step of transferring, via etching, of the grating of patterns in a substrate underlying the layer.

Assignees

Inventors

Classifications

  • G02B5/1857Primary

    using exposure or etching means, e.g. holography, photolithography, exposure to electron or ion beams · CPC title

  • Reflection gratings characterised by their structure, e.g. step profile, contours of substrate or grooves, pitch variations, materials (G02B5/1809, G02B5/1828, G02B5/1833, G02B5/1838 and G02B5/1847 take precedence) · CPC title

  • using mechanical means, e.g. ruling with diamond tool, moulding · CPC title

  • Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping · CPC title

  • Transmission gratings characterised by their structure, e.g. step profile, contours of substrate or grooves, pitch variations, materials (G02B5/1809, G02B5/1828, G02B5/1833, G02B5/1838 and G02B5/1847 take precedence) · CPC title

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What does patent US11456403B2 cover?
A method is provided for producing a microelectronic device having a subsequent grating of reliefs of which at least one wall is slanted, the method including providing a structure including a base, and an initial grating of reliefs, each relief having at least one proximal end in contact with the base, a distal end, and at least one wall extending between the proximal end and the distal end; a…
Who is the assignee on this patent?
Commissariat Energie Atomique
What technology area does this patent fall under?
Primary CPC classification G02B5/1857. Mapped technology areas include Physics.
When was this patent published?
Publication date Tue Sep 27 2022 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 4 related publications on this page (citations in our corpus or others sharing the same primary CPC).