Substrate joining method
US-2019172813-A1 · Jun 6, 2019 · US
Chemical bonding method and joined structure
US11450643B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11450643-B2 |
| Application number | US-202217670593-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 14, 2022 |
| Priority date | Sep 5, 2019 |
| Publication date | Sep 20, 2022 |
| Grant date | Sep 20, 2022 |
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Abstract
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A bonded structure includes a first substrate; a second substrate placed opposite to the first substrate; an intermediate layer provided between the first substrate and the second substrate and including a first oxide thin film layered on the first substrate and a second oxide thin film layered on the second substrate; either or both of the first oxide thin film and the second oxide thin film of the intermediate layer being formed of oxide thin films having increased defects; and an interface between the first oxide thin film and the second oxide thin film=being bonded by chemical bonding, and the interface comprising a low-density portion whose density is lower than that of the two oxide thin films.
First claim
Opening claim text (preview).
What is claimed is: 1. A bonded structure comprising: a first substrate; a second substrate placed opposite to the first substrate; an intermediate layer provided between the first substrate and the second substrate and including a first oxide thin film layered on the first substrate and a second oxide thin film layered on the second substrate; at least one of the first oxide thin film and the second oxide thin film of the intermediate layer being formed of oxide thin films having increased defects; an interface between the first oxide thin film and the second oxide thin film=being bonded by chemical bonding, and the interface comprising a low-density portion whose density is lower than that of the two oxide thin films. 2. The bonded structure according to claim 1 , wherein the interface between the first oxide thin film and the second oxide thin film of the intermediate layer is bonded by chemical bonding with atomic diffusion. 3. The bonded structure according to claim 2 , wherein a material constituting the oxide thin film of the intermediate layer is different from a material constituting the first substrate or the second substrate. 4. The bonded structure according to claim 3 , wherein both of the first oxide thin film and the second oxide thin film of the intermediate layer being formed of oxide thin films having increased defects. 5. The bonded structure according to claim 2 , wherein both of the first oxide thin film and the second oxide thin film of the intermediate layer being formed of oxide thin films having increased defects. 6. The bonded structure according to claim 1 , wherein a material constituting the oxide thin film of the intermediate layer is different from a material constituting the first substrate or the second substrate. 7. The bonded structure according to claim 6 , wherein both of the first oxide thin film and the second oxide thin film of the intermediate layer being formed of oxide thin films having increased defects. 8. The bonded structure according to claim 1 , wherein both of the first oxide thin film and the second oxide thin film of the intermediate layer being formed of oxide thin films having increased defects. 9. A bonded structure comprising: a first substrate; a second substrate placed opposite to the first substrate; an intermediate layer provided between the first substrate and the second substrate and including an oxide thin film having increased defects layered on the first substrate; an interface between the oxide thin film of the intermediate layer and the second substrate being bonded by chemical bonding, and the oxide thin film at the bonded portion having a low-density portion whose density is lower than that of the oxide thin film. 10. The bonded structure according to claim 4 , wherein the interface between the oxide thin film of the intermediate layer and the second substrate is bonded by chemical bonding with atomic diffusion. 11. The bonded structure according to claim 10 , wherein a material constituting the oxide thin film of the intermediate layer is different from a material constituting the first substrate or the second substrate. 12. The bonded structure according to claim 9 , wherein a material constituting the oxide thin film of the intermediate layer is different from a material constituting the first substrate or the second substrate.
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Classifications
between stacked chips · CPC title
Controlling the bonding environment, e.g. atmosphere composition or temperature · CPC title
Soldering or alloying · CPC title
Connecting techniques · CPC title
of outermost layers of multilayered die-attach connectors, e.g. material of a coating · CPC title
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- What does patent US11450643B2 cover?
- A bonded structure includes a first substrate; a second substrate placed opposite to the first substrate; an intermediate layer provided between the first substrate and the second substrate and including a first oxide thin film layered on the first substrate and a second oxide thin film layered on the second substrate; either or both of the first oxide thin film and the second oxide thin film o…
- Who is the assignee on this patent?
- Univ Tohoku, Canon Anelva Corp
- What technology area does this patent fall under?
- Primary CPC classification H10P90/1914. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Sep 20 2022 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).