Salts and photoresists comprising same

Patent metadata

Field	Value
Publication number	US-11448960-B2
Application number	US-201816205055-A
Country	US
Kind code	B2
Filing date	Nov 29, 2018
Priority date	Nov 30, 2017
Publication date	Sep 20, 2022
Grant date	Sep 20, 2022

Abstract

New Te-salts are provided, including photoactive tellurium salt compounds useful for Extreme Ultraviolet Lithography.

First claim

What is claimed is:

1. A photoresist composition comprising
a resin; and
a photoacid generator that comprises a salt comprising an anion component that comprises one or more Te atoms,
wherein the photoresist composition can be imaged with activating radiation and developed with alkaline aqueous developer.

2. A photoresist composition of claim 1 wherein the anion component comprises one or more divalent Te atoms.

3. A photoresist composition of claim 1 wherein the salt comprises one or more tetravalent Te atoms.

4. A photoresist composition of claim 1 wherein the salt corresponds to the following Formula (I):
M + (Z) n -R 1 -(Te) y —R 2 —X—R 3 —Y  (I)

wherein R 1 is a non-hydrogen substituent;
R 2 is a chemical bond or a non-hydrogen substituent;
X is a chemical bond or a divalent linking group;
R 3 is a linker;
Z is absent or a non-hydrogen substituent;
Y is an anionic group;
n is an integer equal to or greater than 0; and y is an integer equal to or greater than 1; and
M + is a cation component.

5. A photoresist composition of claim 1 wherein the salt corresponds to the following Formula (II):

wherein W 1 and W 2 are each the same or different non-hydrogen substituents;
R 1 is a non-hydrogen substituent;
R 2 is a chemical bond or a non-hydrogen substituent;
X is a chemical bond or a divalent linking group;
R 3 is a linker;
Z is absent or a non-hydrogen substituent;
Y is an anionic group;
n is an integer equal or greater than 0; and y is an integer equal or greater than 1; and
M + is a cation component.

6. A photoresist composition of claim 1 wherein the salt comprises a cation component that comprise one or more I + , S + , Se + and/or Te + .

7. A photoresist composition of claim 1 wherein the salt comprises a polymerizable group.

8. A photoresist composition of claim 1 wherein the salt comprises one or more acid-labile groups.

9. The photoresist composition of claim 1 wherein the photoresist composition comprises one or more acid generator compounds that are distinct from the photoacid generator that comprises the salt comprising the anion component that comprises one or more Te atoms.

10. A method for providing a photoresist relief image comprising:
a) applying a coating layer of the photoresist composition of claim 1 on a substrate; and
b) exposing the photoresist composition layer to activating radiation and developing the exposed photoresist composition coating layer.

11. A photoresist composition of claim 1 wherein the salt comprises one or more of the following:

12. A photoresist composition of claim 1 wherein the salt comprises one or more of the following:

13. The photoresist composition of claim 1 wherein the photoresist composition is positive-acting.

14. The method of claim 10 wherein the photoresist composition is imaged with EUV radiation.

15. The method of claim 10 wherein the anion component comprises one or more divalent Te atoms.

16. The method of claim 10 , wherein the salt comprises one or more tetravalent Te atoms.

17. The method of claim 10 , wherein the salt corresponds to the following Formula (I):
M 30 (Z) n —R 1 —(Te) y —R 2 —X—R 3 —Y   (I)

wherein R 1 is a non-hydrogen substituent;
R 2 is a chemical bond or a non-hydrogen substituent; X is a chemical bond or a divalent linking group;
R 3 is a linker;
Z is absent or a non-hydrogen substituent;
Y is an anionic group;
n is an integer equal to or greater than 0; and y is an integer equal to or greater than 1; and
M + is a cation component.

18. The method of claim 10 , wherein the salt corresponds to the following Formula (II):

wherein W 1 and W 2 are each the same or different non-hydrogen substituents;
R 1 is a non-hydrogen substituent;
R 2 is a chemical bond or a non-hydrogen substituent;
X is a chemical bond or a divalent linking group;
R 3 is a linker;
Z is absent or a non-hydrogen substituent;
Y is an anionic group;
n is an integer equal or greater than 0; and y is an integer equal or greater than 1; and
M+ is a cation component.

19. The method of claim 10 , wherein the salt comprises a cation component that comprise one or more I + , S + , Se + and/or Te + .

20. The method of claim 10 , wherein the salt comprises a polymerizable group, one or more acid-labile groups, or a combination thereof.

Assignees

• Rohm & Haas Elect Mat

Inventors

• Aqad Emad
• Cameron James F
• Thackeray James W

Classifications

• G03F7/027

  Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds (G03F7/075 takes precedence) · CPC title

• G03F7/70033

  by plasma extreme ultraviolet [EUV] sources · CPC title

• G03F7/0045

  with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors · CPC title

• G03F7/0397

  the macromolecular compound having an alicyclic moiety in a side chain · CPC title

• C07C395/00 Primary

  Compounds containing tellurium · CPC title