Apparatus for manufacturing semiconductor device and method of manufacturing semiconductor device

Patent metadata

Field	Value
Publication number	US-11447871-B2
Application number	US-201916406062-A
Country	US
Kind code	B2
Filing date	May 8, 2019
Priority date	May 28, 2018
Publication date	Sep 20, 2022
Grant date	Sep 20, 2022

Abstract

There is provided a technique capable of forming a plating film excellent in film thickness and quality uniformity on a to-be-plated surface of a semiconductor wafer while suppressing an increase in costs of facilities. An apparatus for manufacturing a semiconductor device includes: a reaction bath; a supply pipe provided inside the reaction bath and including a plurality of ejection holes for ejecting the reaction solution, the ejecting holes being arranged in a longitudinal direction of the supply pipe; and an outer bath serving as a reservoir bath provided adjacent to the reaction bath on a first end side of the supply pipe and storing therein the reaction solution overflowed the reaction bath. The aperture ratio of part of the ejection holes more distant from the outer bath is at least partially higher than that of part of the ejection holes closer to the outer bath.

First claim

What is claimed is:

1. An apparatus for manufacturing a semiconductor device, comprising:
a reaction bath for immersing a semiconductor wafer in a reaction solution stored therein to form a plating film on the semiconductor wafer;
at least one supply pipe provided inside the reaction bath and including a plurality of ejection holes for ejecting the reaction solution, the ejecting holes being arranged in a longitudinal direction of the supply pipe;
a first reservoir bath provided adjacent to the reaction bath and storing therein the reaction solution overflowed from the reaction bath, wherein the supply pipe extends away from the first reservoir bath;
a second reservoir bath different from the first reservoir bath, wherein:
the first reservoir bath is provided on a first end side of the supply pipe;
the second reservoir bath is provided on a second end side of the supply pipe; and
a pipe that connects the first reservoir bath and the reaction bath to allow transport of the reaction solution from the first reservoir bath to the reaction bath, the pipe being in direct contact with a longitudinal mid-portion of the supply pipe in the reaction bath,
wherein in a portion of the supply pipe that includes the ejection holes, the aperture ratio of the ejection holes in a volume of the pipe more distant from the first reservoir bath and the second reservoir bath is higher than that of the ejection holes in a same size volume of the pipe closer to the first reservoir bath and the second reservoir bath.

2. The apparatus according to claim 1 , wherein
the at least one supply pipe includes a plurality of supply pipes, and
the supply pipes are arranged in a direction intersecting a longitudinal direction of the supply pipes.

3. The apparatus according to claim 1 , wherein
the at least one supply pipe includes a plurality of supply pipes, and
the supply pipes are arranged away from the first reservoir bath and in a direction intersecting a longitudinal direction of the supply pipes.

4. The apparatus according to claim 1 , wherein
the diameter of the ejection holes in a volume of the pipe more distant from the first reservoir bath is greater than that of the ejection holes in a same size volume of the pipe closer to the first reservoir bath or the density of the ejection holes in a volume of the pipe more distant from the first reservoir bath is higher than that of the ejection holes in a same size volume of the pipe closer to the first reservoir bath.

5. The apparatus according to claim 1 , wherein:
the reaction bath is rectangular in shape as seen in plan view;
the first reservoir bath is provided adjacent to one short edge of the rectangular shape of the reaction bath; and
the supply pipe extends parallel to the long edges of the rectangular shape of the reaction bath.

6. The apparatus according to claim 3 , wherein:
the reaction bath is rectangular in shape as seen in plan view;
the first reservoir bath is provided adjacent to one long edge of the rectangular shape of the reaction bath; and
the supply pipes extend parallel to the long edges of the rectangular shape of the reaction bath.

7. An apparatus for manufacturing a semiconductor device, comprising:
a reaction bath for immersing a semiconductor wafer in a reaction solution stored therein to form a plating film on the semiconductor wafer;
at least one supply pipe provided inside the reaction bath and including a plurality of ejection holes for ejecting the reaction solution, the ejecting holes being arranged in a longitudinal direction of the supply pipe; and
a first reservoir bath provided adjacent to the reaction bath and storing therein the reaction solution overflowed from the reaction bath, wherein the supply pipe extends away from the first reservoir bath;
a second reservoir bath different from the first reservoir bath, wherein:
the first reservoir bath is provided on a first end side of the supply pipe;
the second reservoir bath is provided on a second end side of the supply pipe; and
wherein in a portion of the supply pipe that includes the ejection holes, the aperture ratio of the ejection holes in a volume of the pipe in a center of the pipe more distant from the first reservoir bath and the second reservoir bath is higher than that of the ejection holes in a same size volume of the pipe at both ends of the pipe closer to the first reservoir bath and the second reservoir bath.

Assignees

• Mitsubishi Electric Corp

Inventors

• Nakamura Shotaro

Classifications

• H10P72/04

  Apparatus for manufacture or treatment · CPC title

• H10P70/27 Primary

  during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers · CPC title

• H10P14/46

  using a liquid · CPC title

• H10W20/044

  for electroless plating · CPC title

• H10W99/00

  Subject matter not provided for in other groups of this subclass · CPC title