Substrate processing gas, storage container, and substrate processing method

Patent metadata

Field	Value
Publication number	US-11447697-B2
Application number	US-201917040803-A
Country	US
Kind code	B2
Filing date	Mar 5, 2019
Priority date	Mar 29, 2018
Publication date	Sep 20, 2022
Grant date	Sep 20, 2022

Abstract

A substrate processing gas of the present invention contains IF5; and IF7, in which a content of the IF5 is equal to or more than 1 ppm and equal to or less than 2% on a volume basis with respect to a total amount of the IF5 and the IF7.

First claim

The invention claimed is:

1. A substrate processing gas comprising:
IF 5 ; and
IF 7 ,
wherein a content of the IF 5 is greater than or equal to 1 ppm on a volume basis and less than or equal to 1% on a volume basis with respect to a total amount of the IF 5 and the IF 7 .

2. The substrate processing gas according to claim 1 ,
wherein a content of the IF 7 is greater than or equal to 50% on a volume basis with respect to a total amount of the substrate processing gas.

3. The substrate processing gas according to claim 1 ,
wherein the content of the IF 5 is greater than or equal to 10 ppm on a volume basis and less than or equal to 1% on a volume basis with respect to the total amount of the IF 5 and the IF 7 .

4. The substrate processing gas according to claim 1 ,
wherein the content of the IF 5 is greater than or equal to 5 ppm on a volume basis and less than or equal to 1% on a volume basis with respect to the total amount of the IF 5 and the IF 7 .

5. The substrate processing gas according to claim 1 ,
wherein a content of the IF 7 is less than or equal to 99.99% on a volume basis with respect to a total amount of the substrate processing gas.

6. The substrate processing gas according to claim 1 ,
wherein a content of the IF 7 is less than or equal to 98% on a volume basis with respect to a total amount of the substrate processing gas.

7. The substrate processing gas according to claim 1 , further comprising:
at least one metal selected from the group consisting of Fe, Cr, Mn, Co, Ti, Mo, Cu, and Ni,
wherein a content of each of the metals contained is less than or equal to 100 ppb on a mass basis, with respect to a total amount of the substrate processing gas.

8. The substrate processing gas according to claim 7 ,
wherein the content of each of the metals contained is greater than or equal to 0.1 ppb on a mass basis, with respect to a total amount of the substrate processing gas.

9. The substrate processing gas according to claim 1 ,
wherein the substrate processing gas is an etching gas.

10. The substrate processing gas according to claim 9 ,
further comprising an oxidizing gas and/or an inert gas.

11. The substrate processing gas according to claim 10 ,
wherein the oxidizing gas comprises at least one gas selected from the group consisting of O 2 , O 3 , CO 2 , COCl 2 , COF 2 , N 2 O, NO, NO 2 , HF, F 2 , NF 3 , Cl 2 , Bra, I 2 , and YFn (Y═Cl, Br, or I, and I≤n≤5).

12. The substrate processing gas according to claim 10 ,
wherein the inert gas comprises at least one gas selected from the group consisting of N 2 , Ar, Ne, He, and Kr.

13. A storage container filled with the substrate processing gas according to claim 1 .

14. The storage container according to claim 13 , wherein the storage container is a metal container.

15. A substrate processing method comprising: dry-etching silicon without plasma, using the substrate processing gas according to claim 1 .

16. The substrate processing method according to claim 15 ,
wherein in a case where the dry-etching of the silicon is performed 10 times,
an average value of etching rates is greater than or equal to 100 nm/min, and
a standard deviation of the etching rates is less than or equal to 10.

17. The substrate processing method according to claim 15 ,
wherein in a case where the dry-etching of the silicon is performed 10 times,
an average value of etching rates is greater than or equal to 200 nm/min, and
a standard deviation of the etching rates is less than or equal to 5.

Assignees

• Central Glass Co Ltd

Inventors

• Yao Akifumi
• TAKEDA Yuuta
• Eto Jun

Classifications

• H10P50/242 Primary

  of Group IV materials · CPC title

• H10P50/266 Primary

  by vapour etching only · CPC title

• C01B7/24

  Inter-halogen compounds · CPC title

• C09K13/00 Primary

  Etching, surface-brightening or pickling compositions (for glass C03C15/00, {C03C25/66; for mortars, concrete, artificial or natural stone or ceramics C04B41/5338}; for metallic material C23F, C23G1/00, C25F1/00; {for semi-conductors H10P52/40}) · CPC title

• H01L21/3065

  Electricity · mapped topic