Silicon dry etching method

Patent metadata

Field	Value
Publication number	US-9524877-B2
Application number	US-201414765413-A
Country	US
Kind code	B2
Filing date	Jan 24, 2014
Priority date	Feb 1, 2013
Publication date	Dec 20, 2016
Grant date	Dec 20, 2016

Abstract

A dry etching method according to the present invention is for etching a silicon layer as a processing target in a processing room, characterized by supplying an iodine heptafluoride-containing etching gas from a gas supply source at a supply pressure of 66 kPa to 0.5 MPa, evacuating the processing room to an internal pressure lower than the supply pressure of the etching gas and, while maintaining the etching gas at the supply pressure, introducing the etching gas into the evacuated processing room so as to etch the silicon layer by the etching gas. It is possible by this dry etching method to etch the silicon upon adiabatic expansion of the etching gas under mild pressure conditions, with no fear of equipment load and equipment cost increase, and achieve good uniformity of in-plane etching amount distribution.

First claim

The invention claimed is:

1. A plasma-less dry etching method for etching a silicon layer as a processing target in a processing room, comprising:
supplying an iodine heptafluoride-containing etching gas from a gas supply source at a supply pressure of 66 kPa to 0.5 MPa;
evacuating the processing room to an internal pressure lower than the supply pressure of the etching gas; and,
while maintaining the etching gas at the supply pressure, introducing the etching gas into the evacuated processing room so as to etch the silicon layer by the etching gas,
wherein the ratio Ps/Pn between the supply pressure (Ps) of the etching gas and the internal pressure (Pn) of the processing room is in a range of 20 to 1×10 9 , and
wherein plasma excitation is not required.

2. The plasma-less dry etching method according to claim 1 , wherein the iodine heptafluoride is contained in an amount of 50 vol % or more in the etching gas.

3. The plasma-less dry etching method according to claim 2 , wherein the etching gas contains substantially no component other than iodine heptafluoride.

4. The plasma-less dry etching method according to claim 3 , wherein the ratio Ps/Pn is in the range of 20 to 1×10 9 ; and wherein the temperature of the processing target is −40° C. to 150° C.

5. The plasma-less dry etching method according to claim 1 , wherein the temperature of the processing target is −40° C. to 150° C.

6. The plasma-less dry etching method according to claim 1 , wherein the processing target includes at least the silicon layer and an etching-resistant part such that the silicon target can be selectively etched by the etching gas.

7. The plasma-less dry etching method according to claim 6 , wherein the etching-resistant part is formed of at least one material selected from the group consisting of SiO 2 , SiN and TiN.

8. The plasma-less dry etching method according to claim 1 , wherein the ratio Ps/Pn is in the range of 50 to 1×10 7 .

Assignees

• Central Glass Co Ltd

Inventors

• Kikuchi Akiou
• Mori Isamu
• Watari Masanori

Classifications

• H10P50/242 Primary

  of Group IV materials · CPC title

• H01L21/3065 Primary

  Electricity · mapped topic