Semiconductor device with integrated memory devices and MOS devices and process of making the same

Patent metadata

Field	Value
Publication number	US-11444095-B2
Application number	US-202117229848-A
Country	US
Kind code	B2
Filing date	Apr 13, 2021
Priority date	Dec 22, 2019
Publication date	Sep 13, 2022
Grant date	Sep 13, 2022

Abstract

A semiconductor device with integrated memory devices and metal-oxide-semiconductor (MOS) devices, including a substrate with a first area and a second area, multiple double-diffused metal-oxide-semiconductor (DMOS) devices on the first area, wherein the double-diffused metal-oxide-semiconductor (DMOS) device includes a field oxide on the substrate, a first gate dielectric layer adjacent to the field oxide, and a first polysilicon gate on the field oxide and the first gate dielectric layer, and multiple memory units on the second area, wherein the memory unit includes an oxide-nitride-oxide (ONO) tri-layer and a second polysilicon gate on the oxide-nitride-oxide (ONO) tri-layer, wherein a top surface of the second polysilicon gate of the memory unit in the second area and a top surface of the first polysilicon gate of the double-diffused metal-oxide-semiconductor (DMOS) in the first area are on the same level.

First claim

What is claimed is:

1. A semiconductor device with integrated memory devices and metal-oxide-semiconductor (MOS) devices, comprising:
a substrate with a first area and a second area;
multiple double-diffused metal-oxide-semiconductor (DMOS) devices on said first area, wherein said double-diffused metal-oxide-semiconductor (DMOS) device comprises a field oxide on said substrate, a first gate dielectric layer adjacent to said field oxide, and a first polysilicon gate on said field oxide and said first gate dielectric layer; and
multiple memory units on said second area, wherein said memory unit comprises an oxide-nitride-oxide (ONO) tri-layer and a second polysilicon gate on said oxide-nitride-oxide (ONO) tri-layer, wherein a top surface of said second polysilicon gate of said memory unit in said second area and a top surface of said first polysilicon gate of said double-diffused metal-oxide-semiconductor (DMOS) in said first area are on the same level.

2. The semiconductor device with integrated memory devices and metal-oxide-semiconductor (MOS) devices of claim 1 , further comprising multiple complementary metal-oxide-semiconductor (CMOS) devices in said first area, wherein said complementary metal-oxide-semiconductor (CMOS) device comprises a second gate dielectric layer and a third polysilicon gate on said second gate dielectric layer, and a top surface of said third polysilicon gate of said complementary metal-oxide-semiconductor (CMOS) is on the same level as said top surface of said first polysilicon gate of said double-diffused metal-oxide-semiconductor (DMOS) in said first area and said top surface of said second polysilicon gate of said memory unit in said second area.

3. The semiconductor device with integrated memory devices and metal-oxide-semiconductor (MOS) devices of claim 2 , wherein said first gate dielectric layers of said DMOS device is thicker than said second gate dielectric layers of said CMOS device.

4. The semiconductor device with integrated memory devices and metal-oxide-semiconductor (MOS) devices of claim 1 , wherein said first polysilicon gate of said double-diffused metal-oxide-semiconductor (DMOS) partly overlaps said field oxide at one sides.

5. The semiconductor device with integrated memory devices and metal-oxide-semiconductor (MOS) devices of claim 1 , wherein said memory unit is silicon-oxide-nitride-oxide-silicon (SONOS) memory.

Assignees

• United Microelectronics Corp

Inventors

• Xiang Wang
• Hsu Chia-Ching
• Wang Shen-De
• Liu Weichang

Classifications

• H10P76/2041

  Photolithographic processes · CPC title

• H10P50/73

  using masks for insulating materials · CPC title

• H10P50/71

  using masks for conductive or resistive materials · CPC title

• H10P14/69433

  the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz · CPC title

• H10P14/69215

  the material being a silicon oxide, e.g. SiO2 · CPC title