Packaged dies with metal outer layers extending from die back sides toward die front sides

Patent metadata

Field	Value
Publication number	US-11437276-B2
Application number	US-202016920462-A
Country	US
Kind code	B2
Filing date	Jul 3, 2020
Priority date	Jul 5, 2017
Publication date	Sep 6, 2022
Grant date	Sep 6, 2022

Abstract

A method of wafer dicing includes singulating dies from a semiconductor wafer. The method further includes depositing a metal layer on back sides of the singulated dies, wherein a portion of the metal layer continues beyond the backs sides of the singulated dies to deposit at least partially on lateral sides of the singulated dies. A packaged die includes a semiconductor die and a metal outer layer deposited on the back side of the semiconductor die and on a portion of the lateral side of the semiconductor die nearest the back side. The packaged die further includes a substrate mounted to the back side of the semiconductor die a die attach material that bonds the substrate to the metal outer layer deposited on the semiconductor die, wherein the metal outer layer and the die attach material surround the back edge of the semiconductor die.

First claim

What is claimed is:

1. A packaged die comprising:
a semiconductor die having a front side opposite a back side, a plasma-etched lateral side adjacent to the front side and the back side, and a back edge where the back side and the plasma-etched lateral side meet, the semiconductor die comprising:
a base semiconductor substrate;
build up layers formed over the base semiconductor substrate to define the front side of the semiconductor die; and
a radio frequency (RF) device formed in the base semiconductor substrate and in the build-up layers;

a metal outer layer deposited on the back side of the semiconductor die and on a portion of the plasma-etched lateral side of the semiconductor die nearest the back side, wherein the metal outer layer extends on the plasma-etched lateral side from the back side toward the front side, while terminating before reaching the front side of the semiconductor die;
a substrate; and
an electrically-conductive die attach material bonding the semiconductor die to the substrate, the RF power device electrically coupled to the substrate through the electrically-conductive die attach material and through the metal outer layer.

2. The packaged die of claim 1 , wherein the metal outer layer comprises at least one of:
gold;
silver;
copper; or
nickel.

3. The packaged die of claim 1 , wherein the electrically-conductive die attach material comprises:
a sintered metal;
a conductive adhesive; or
a solder.

4. The packaged die of claim 1 , wherein the metal outer layer and the electrically-conductive die attach material extend beyond a width of the back side of the semiconductor die so the back edge of the semiconductor die, where the back side and the plasma-etched lateral side of the semiconductor die meet, is encapsulated by the metal outer layer and the electrically-conductive die attach material.

5. The packaged die of claim 1 , wherein the substrate comprises one or more of gold, silver, copper, nickel and an alloy thereof.

6. The packaged die of claim 1 , wherein the substrate comprises a copper flange.

7. The packaged die of claim 1 , wherein the substrate comprises a metal or metal alloy ground layer over a printed circuit board material.

8. A packaged die comprising:
a semiconductor die having a front side opposite a back side, four plasma-etched lateral sides adjacent to the front and back sides, and four back edges where the back side and the four plasma-etched lateral sides meet;
a metal outer layer deposited on the back side of the semiconductor die and on portions of the four plasma-etched lateral sides of the semiconductor die nearest the back side, wherein the metal outer layer extends on the four plasma-etched lateral sides from the back side toward the front side, while terminating before reaching the front side of the semiconductor die;
a substrate; and
a die attach material between the substrate and the metal outer layer, wherein the die attach material bonds the semiconductor die to the substrate, and wherein the die attach material also extends over the metal outer layer on the four plasma-etched lateral sides from the back side toward the front side, while terminating before reaching the front side of the semiconductor die;
wherein the semiconductor die comprises a singulated piece of an RF power wafer and contains an RF power device, the RF power device electrically coupled to an electrically-grounded region of the substrate through the die attach material and through the metal outer layer deposited on the back side and the four plasma-etched later sides of the semiconductor die.

9. The packaged die of claim 8 , wherein the metal outer layer comprises at least one of:
gold;
silver;
copper; or
nickel.

10. The packaged die of claim 8 , wherein the die attach material comprises:
a sintered metal;
a conductive adhesive; or
a solder.

11. The packaged die of claim 10 , wherein the die attach material comprises:
sintered silver; or
sintered copper.

12. The packaged die of claim 8 , wherein the substrate comprises one or more of gold, silver, copper, nickel and an alloy thereof.

13. The packaged die of claim 8 , wherein the substrate comprises a copper flange.

14. The packaged die of claim 8 , wherein the substrate comprises a metal or metal alloy ground layer over a printed circuit board material.

15. The packaged die of claim 1 , wherein the metal outer layer directly contacts the back side and plasma-etched lateral side of the semiconductor die.

16. The packaged die of claim 1 , wherein the metal outer layer covers between 20% and 80% of the plasma-etched lateral side of the semiconductor die, by surface area.

17. The packaged die of claim 1 , wherein the plasma-etched lateral side of the semiconductor die has a concave profile.

18. The packaged die of claim 8 , wherein the metal outer layer directly contacts the back side and the four plasma-etched lateral sides of the semiconductor die.

19. The packaged die of claim 8 , wherein the metal outer layer covers between 20% and 80% of the four plasma-etched lateral sides of the semiconductor die, by surface area.

20. The packaged die of claim 8 , wherein at least one of the four plasma-etched lateral sides of the semiconductor die has a concave profile.

Assignees

• Nxp Usa Inc

Inventors

• Molla Jaynal A
• Viswanathan Lakshminarayan
• Abdo David
• RAMPLEY Colby Greg
• Santos Fernando A

Classifications

• H10P72/7434

  used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate · CPC title

• H10P72/7422

  used to protect an active side of a device or wafer · CPC title

• H10P72/7416

  used during dicing or grinding · CPC title

• H10P72/74

  using temporarily an auxiliary support · CPC title

• H10P52/00

  Grinding, lapping or polishing of wafers, substrates or parts of devices · CPC title