Semiconductor device and method of manufacturing semiconductor device

Patent metadata

Field	Value
Publication number	US-11430666-B2
Application number	US-201916732205-A
Country	US
Kind code	B2
Filing date	Dec 31, 2019
Priority date	Dec 31, 2019
Publication date	Aug 30, 2022
Grant date	Aug 30, 2022

Abstract

A method of fabricating a semiconductor device includes applying a plasma to a portion of a metal dichalcogenide film. The metal dichalcogenide film includes a first metal and a chalcogen selected from the group consisting of S, Se, Te, and combinations thereof. A metal layer including a second metal is formed over the portion of the metal dichalcogenide film after applying the plasma.

First claim

What is claimed is:

1. A method of fabricating a semiconductor device, comprising:
applying a plasma to a portion of a metal dichalcogenide film,
wherein the metal dichalcogenide film comprises a first metal and a chalcogen selected from the group consisting of S, Se, Te, and combinations thereof;
forming a first metal layer over the portion of the metal dichalcogenide film and in contact with the metal dichalcogenide film after applying the plasma,
wherein the first metal layer is a layer of one or more second metals selected from the group consisting of Ni, Mo, In, Ti, W, Sc, Pd, Pt, Co, and Ru; and
forming a second metal layer comprising a third metal over the first metal layer,
wherein the third metal is less reactive than the one or more second metals.

2. The method according to claim 1 , wherein the plasma is a hydrogen plasma.

3. The method according to claim 1 , wherein the pressure of the plasma ranges from 10 mTorr to 500 mTorr, and the plasma is applied at a power ranging from 10 W to 150 W.

4. The method according to claim 1 , wherein the first metal is one or more selected from the group consisting of Mo, W, Pd, and Hf.

5. The method according to claim 1 , wherein the metal layer is formed at a temperature ranging from 100° C. to 300° C. or the device is heated to a temperature ranging from 100° C. to 300° C. after forming the metal layer.

6. The method according to claim 1 , wherein the third metal is one or more selected from the group consisting of Au, Pt, Cu, and TiN.

7. The method according to claim 1 , wherein the second metal layer has a thickness ranging from 10 nm to 100 nm.

8. The method according to claim 1 , wherein the first metal layer has a thickness ranging from 1 nm to 25 nm.

9. A method of fabricating a semiconductor device, comprising:
forming a metal dichalcogenide film over a substrate,
wherein the metal dichalcogenide film comprises a first metal and a chalcogen selected from the group consisting of S, Se, Te, and combinations thereof;
forming a buffer layer over the metal dichalcogenide film;
patterning the buffer layer to expose portions of the metal dichalcogenide film;
plasma stripping the chalcogen from a surface layer of the exposed portions of the metal dichalcogenide film;
forming a first metal layer over the exposed portions of the metal dichalcogenide film and in contact with the metal dichalcogenide film after the plasma stripping,
wherein the first metal layer is a layer of one or more second metals selected from the group consisting of Ni, Mo, In, Ti, W, Sc, Pd, Pt, Co, and Ru; and
forming a second metal layer comprising a third metal over the first metal layer,
wherein the third metal is less reactive than the one or more second metals.

10. The method according to claim 9 , wherein the buffer layer is a photoresist layer or an oxide layer.

11. The method according to claim 9 , wherein the plasma stripping includes replacing the chalcogen in the surface layer of the exposed portions of the metal dichalcogenide film with hydrogen.

12. The method according to claim 11 , wherein the forming a first metal layer includes replacing the hydrogen with the one or more second metals.

13. The method according to claim 9 , wherein the plasma stripping is performed at a plasma pressure ranging from 10 mTorr to 500 mTorr, and a power ranging from 10 W to 150 W.

14. The method according to claim 9 , wherein the first metal is one or more selected from the group consisting of Mo, W, Pd, and Hf.

15. A method of fabricating a semiconductor device, comprising:
forming a first metal dichalcogenide monolayer film over a substrate,
forming a second metal dichalcogenide monolayer film over the first metal dichalcogenide monolayer film,
wherein the first and second metal dichalcogenide films comprise a first metal and a chalcogen selected from the group consisting of S, Se, Te, and combinations thereof;
patterning the second metal dichalcogenide monolayer film to expose portions of the first metal dichalcogenide monolayer film;
applying a plasma to the exposed portions of the first metal dichalcogenide monolayer film; and
forming a metal layer over the exposed portions of the first metal dichalcogenide monolayer film after applying the plasma.

16. The method according to claim 15 , wherein the metal layer is a layer of one or more second metals selected from the group consisting of Ni, Mo, In, Ti, W, Sc, Pd, Pt, Co, and Ru.

17. The method according to claim 15 , further comprising forming a second metal layer comprising a third metal over the metal layer.

18. The method according to claim 16 , wherein the third metal is one or more selected from the group consisting of Au, Pt, Cu, and TiN.

19. The method according to claim 15 , wherein the plasma is a hydrogen plasma.

20. The method according to claim 15 , wherein the pressure of the plasma ranges from 10 mTorr to 500 mTorr, and the plasma is applied at a power ranging from 10 W to 150 W.

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Chuu Chih-Piao
• Li Ming-Yang
• Li Lain-Jong

Classifications

• H10P14/3436

  being chalcogenide semiconductor materials not being oxides, e.g. ternary compounds · CPC title

• H10D64/011 Primary

  of electrodes ohmically coupled to a semiconductor · CPC title

• H10P14/203

  using transformation of metal, e.g. oxidation or nitridation · CPC title

• H10P14/2921

  being crystalline insulating materials · CPC title

• H10D62/8281

  comprising only transition metal dichalcogenide materials heterojunctions, e.g. MoS2/WSe2 · CPC title