High sensitivity TMR magnetic sensor

Patent metadata

Field	Value
Publication number	US-11428758-B2
Application number	US-201916718351-A
Country	US
Kind code	B2
Filing date	Dec 18, 2019
Priority date	Aug 27, 2019
Publication date	Aug 30, 2022
Grant date	Aug 30, 2022

Abstract

A tunneling magnetoresistance (TMR) sensor device is disclosed that includes one or more TMR resistors. The TMR sensor device comprises a first TMR resistor comprising a first TMR film, a second TMR resistor comprising a second TMR film different than the first TMR film, a third TMR resistor comprising the second TMR film, and a fourth TMR resistor comprising the first TMR film. The first and fourth TMR resistors are disposed in a first plane while the second and third TMR resistors are disposed in a second plane different than the first plane. The first TMR film comprises a synthetic anti-ferromagnetic pinned layer having a magnetization direction of a reference layer orthogonal to a magnetization direction a free layer. The second TMR film comprises a double synthetic anti-ferromagnetic pinned layer having a magnetization direction of a reference layer orthogonal to a magnetization direction of a free layer.

First claim

What is claimed is:

1. A tunneling magnetoresistance (TMR) sensor device, comprising:
a first TMR resistor comprising a first TMR film, the first TMR film comprising a synthetic anti-ferromagnetic pinned layer having a magnetization direction of a first reference layer orthogonal to a magnetization direction of a first free layer;
a second TMR resistor comprising a second TMR film, the second TMR film comprising a double synthetic anti-ferromagnetic pinned layer having a magnetization direction of a second reference layer orthogonal to magnetization direction of a second free layer and opposite to the magnetization direction of the first reference layer of the first TMR film;
a third TMR resistor comprising the second TMR film; and

a fourth TMR resistor comprising the first TMR film, wherein the first and fourth TMR resistors are disposed in a first cross-sectional plane with respect to a first middle lead and the second and third TMR resistors are disposed in a second cross-sectional plane with respect to a second middle lead different than the first cross-sectional plane.

2. The TMR sensor device of claim 1 , wherein the first TMR resistor is adjacent to the second TMR resistor and the third TMR resistor, the second TMR resistor is adjacent to the first TMR resistor and the fourth TMR resistor, the third TMR resistor is adjacent to the first TMR resistor and the fourth TMR resistor, and the fourth TMR resistor is adjacent to the second TMR resistor and the third TMR resistor.

3. The TMR sensor device of claim 1 , wherein the first reference layer of the first TMR film has a magnetization direction anti-parallel to a magnetization direction of a first pinned layer of the first TMR film.

4. The TMR sensor device of claim 3 , wherein the first TMR film further comprises a first barrier layer, a first spacer layer, and a first antiferromagnet layer, and wherein the first barrier layer is disposed between the first reference layer and the first free layer, the first spacer layer is disposed between the first reference layer and the first pinned layer, and the first antiferromagnet layer is disposed adjacent to the first pinned layer.

5. The TMR sensor device of claim 1 , wherein the second TMR film further comprises a second pinned layer and a third pinned layer disposed between the second reference layer and the second pinned layer, the second reference layer having a magnetization direction parallel to a magnetization direction of the second pinned layer and anti-parallel to a magnetization direction of the third pinned layer.

6. The TMR sensor device of claim 5 , wherein the second TMR film further comprises a second barrier layer, a second spacer layer, a third spacer layer, and a second antiferromagnet layer, and wherein the second barrier layer is disposed between the second reference layer and the second free layer, the second spacer layer is disposed between the second reference layer and the third pinned layer, the third spacer layer is disposed between the second pinned layer and the third pinned layer, and the second antiferromagnet layer is disposed adjacent to the second pinned layer.

7. The TMR sensor device of claim 1 , wherein the first reference layer of the first TMR film comprises a Co/CoFe/Co multi-layer stack having a thickness of between about 20 Angstroms and about 30 Angstroms, and wherein the second reference layer of the second TMR film comprises a Co/CoFe/Co multi-layer stack having a thickness of between about 20 Angstroms and about 30 Angstroms.

8. A method of fabricating a TMR sensor device comprising a first TMR resistor, a second TMR resistor, a third TMR resistor, and a fourth TMR resistor, comprising:
forming a first bottom lead and a second bottom lead in a first dielectric layer;
depositing a first TMR film over the first and second bottom leads and the first dielectric layer;
forming the first TMR resistor and the fourth TMR resistor from the first TMR film by removing one or more first portions of the first TMR film disposed over the first dielectric layer;
forming a plurality of middle leads;
depositing a second TMR film over the plurality of middle leads, the second TMR film being different than the first TMR film;
forming the second TMR resistor and the third TMR resistor from the second TMR film by removing one or more first portions of the second TMR film disposed over the first and second TMR resistors; and
forming a plurality of top leads, wherein the first and fourth TMR resistors are disposed in a first cross-sectional plane with respect to a first middle lead and the second and third TMR resistors are disposed in a second cross-sectional plane with respect to a second middle lead different than the first cross-sectional plane.

9. The method of claim 8 ,
wherein the first TMR resistor is adjacent to and unaligned with the second TMR resistor and the third TMR resistor, the second TMR resistor is adjacent to and unaligned with the first TMR resistor and the fourth TMR resistor, the third TMR resistor is adjacent to and unaligned with the first TMR resistor and the fourth TMR resistor, and the fourth TMR resistor is adjacent to and unaligned with the second TMR resistor and the third TMR resistor.

10. The method of claim 8 , wherein the first TMR film comprises a synthetic anti-ferromagnetic pinned layer having a magnetization direction of a first reference layer orthogonal to a magnetization direction of a first free layer, and
wherein the second TMR film comprises a double synthetic anti-ferromagnetic pinned layer having a magnetization direction of a second reference layer orthogonal to magnetization direction of a second free layer and opposite to the magnetization direction of the first reference layer of the first TMR film.

11. The method of claim 8 , wherein a first reference layer of the first TMR film has a magnetization direction anti-parallel to a magnetization direction of a first pinned layer of the first TMR film, and
wherein the second TMR film further comprises a second pinned layer, a second reference layer, and a third pinned layer disposed between the second reference layer and the second pinned layer, the second reference layer having a magnetization direction parallel to a magnetization direction of the second pinned layer and anti-parallel to a magnetization direction of the third pinned layer.

12. The method of claim 8 , wherein the plurality of middle leads comprise the first middle lead, the second middle lead, a third middle lead, and a fourth middle lead, and wherein the first middle lead is a top lead for the first TMR resistor, the second middle lead is a bottom lead for the second TMR resistors, a third middle lead is a bottom lead for the third TMR resistor, and a fourth middle lead is a top lead for the fourth TMR resistor.

13. The method of claim 12 , wherein a first top lead is disposed on the first middle lead, a second top lead is disposed on the second TMR resistor, a third top lead is disposed on the third TMR resistor, and a fourth top lead is disposed on the fourth middle lead.

14. A method of fabricating a TMR sensor device, comprising:
forming a first bottom lead and a second bottom lead;
depositing a first TMR film over the first and second bottom leads, the first TMR film comprising a synthetic anti-ferromagnetic pinned layer having a magnetization direction of a first reference layer orthogonal to a magnetization direction of a first free layer;
depositing a first photoresist over first portions of the first TMR film disposed on the first bottom lead and the second bottom lead;
etching second portions of the first TMR film to expose a fir

Assignees

• Western Digital Tech Inc

Inventors

• Hu Chih-Ching
• Wang Yung-Hung
• Mao Ming
• Mauri Daniele
• Jiang Ming

Classifications

• G01R33/0052

  Manufacturing aspects; Manufacturing of single devices, i.e. of semiconductor magnetic sensor chips (devices based on galvano-magnetic effect or the like H10N50/85) · CPC title

• G01R33/0023

  Electronic aspects, e.g. circuits for stimulation, evaluation, control; Treating the measured signals; calibration (G01R33/0017 takes precedence) · CPC title

• H01F41/302

  for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices (spin-exchange-coupled multilayers H01F10/32) · CPC title

• H01F10/3254

  the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ] · CPC title

• G01R33/098 Primary

  comprising tunnel junctions, e.g. tunnel magnetoresistance sensors · CPC title