Rare-earth oxide based coatings based on ion assisted deposition

Patent metadata

Field	Value
Publication number	US-11424136-B2
Application number	US-202017137076-A
Country	US
Kind code	B2
Filing date	Dec 29, 2020
Priority date	Jul 20, 2013
Publication date	Aug 23, 2022
Grant date	Aug 23, 2022

Abstract

A component for a processing chamber includes a ceramic body having at least one surface with a first average surface roughness. The component further includes a conformal protective layer on at least one surface of the ceramic body, wherein the conformal protective layer is a plasma resistant rare earth oxide film having a substantially uniform thickness of less than 300 μm over the at least one surface and having a second average surface roughness that is less than the first average surface roughness.

First claim

What is claimed is:

1. A chamber component for a processing chamber, comprising:
a ceramic body having at least one surface with a first average surface roughness; and
a conformal protective layer on the at least one surface of the ceramic body, wherein the conformal protective layer is a plasma resistant rare earth oxide film having a substantially uniform thickness of less than 300 μm over the at least one surface and having a second average surface roughness that is less than the first average surface roughness, wherein the second average surface roughness is below 10 micro-inches.

2. The chamber component of claim 1 , wherein the first average surface roughness is approximately 8-16 micro-inches.

3. The chamber component of claim 1 , wherein the conformal protective layer comprises Y 3 Al 5 O 12 .

4. The chamber component of claim 1 , wherein the conformal protective layer comprises Y 4 Al 2 O 9 .

5. The chamber component of claim 1 , wherein the conformal protective layer comprises Er 2 O 3 .

6. The chamber component of claim 1 , wherein the conformal protective layer comprises Er 3 Al 5 O 12 .

7. The chamber component of claim 1 , wherein the conformal protective layer comprises YF 3 .

8. The chamber component of claim 1 , wherein the conformal protective layer comprises ErAlO 3 .

9. The chamber component of claim 1 , wherein the conformal protective layer comprises a ceramic compound comprising Y 4 Al 2 O 9 and a solid-solution of Y 2 O 3 —ZrO 2 .

10. A chamber component for a processing chamber, comprising:
a ceramic body having at least one surface with a first average surface roughness; and
a conformal protective layer on the at least one surface of the ceramic body, wherein the conformal protective layer is a plasma resistant rare earth oxide film having a substantially uniform thickness of less than 300 μm over the at least one surface and having a second average surface roughness that is less than the first average surface roughness, wherein the conformal protective layer has a composition of 40-100 mol % of Y 2 O 3 , above 0-60 mol % of ZrO 2 , and above 0-10 mol % of Al 2 O 3 .

11. The chamber component of claim 9 , wherein the ceramic compound has a composition of 40-60 mol % of Y 2 O 3 , 30-50 mol % of ZrO 2 , and 10-20 mol % of Al 2 O 3 .

12. The chamber component of claim 9 , wherein the ceramic compound has a composition of 40-50 mol % of Y 2 O 3 , 20-40 mol % of ZrO 2 , and 20-40 mol % of Al 2 O 3 .

13. The chamber component of claim 9 , wherein the ceramic compound has a composition of 70-90 mol % of Y 2 O 3 , above 0-20 mol % of ZrO 2 , and 10-20 mol % of Al 2 O 3 .

14. The chamber component of claim 9 , wherein the ceramic compound has a composition of 60-80 mol % of Y 2 O 3 , above 0-10 mol % of ZrO 2 , and 20-40 mol % of Al 2 O 3 .

15. The chamber component of claim 9 , wherein the ceramic compound has a composition of 40-60 mol % of Y 2 O 3 , above 0-20 mol % of ZrO 2 , and 30-40 mol % of Al 2 O 3 .

16. A chamber component for a processing chamber, comprising:
a ceramic body having at least one surface with a first average surface roughness; and
a conformal protective layer on the at least one surface of the ceramic body, wherein the conformal protective layer is a plasma resistant rare earth oxide film having a substantially uniform thickness over the at least one surface and having a second average surface roughness that is less than the first average surface roughness, wherein the conformal protective layer has a thickness of about 0.5 μm to about 30 μm.

17. The chamber component of claim 1 , wherein processing chamber is an etch chamber, and wherein the chamber component is a lid or nozzle for the etch chamber.

18. The chamber component of claim 1 , wherein the conformal protective layer has a sidewall portion that coats a portion of an interior of a hole included by the ceramic body, and the sidewall portion of the conformal protective layer is thicker near the at least one surface of the ceramic body and gradually becomes thinner deeper into the hole.

19. The chamber component of claim 1 , wherein the chamber component is a lid, the lid further comprising:
a lip on the at least one surface at an outer perimeter of the lid that is to be in contact with walls of a chamber when the lid is closed, wherein the conformal protective layer does not cover the lip.

20. The chamber component of claim 16 , wherein the conformal protective layer has a composition selected from a group consisting of:
40-60 mol % of Y 2 O 3 , 30-50 mol % of ZrO 2 , and 10-20 mol % of Al 2 O 3 ;
40-50 mol % of Y 2 O 3 , 20-40 mol % of ZrO 2 , and 20-40 mol % of Al 2 O 3 ;
70-90 mol % of Y 2 O 3 , above 0-20 mol % of ZrO 2 , and 10-20 mol % of Al 2 O 3 ;
60-80 mol % of Y 2 O 3 , above 0-10 mol % of ZrO 2 , and 20-40 mol % of Al 2 O 3 ; and
40-60 mol % of Y 2 O 3 , above 0-20 mol % of ZrO 2 , and 30-40 mol % of Al 2 O 3 .

Assignees

• Applied Materials Inc

Inventors

• Sun Jennifer Y
• Kanungo Biraja P
• Firouzdor Vahid
• Zhang Ying

Classifications

• H10P72/0426

  with the semiconductor substrates being dipped in baths or vessels · CPC title

• H10P72/0424

  using mainly spraying means, e.g. nozzles · CPC title

• H10P72/0421

  for drying etching · CPC title

• H10P72/0418

  for etching · CPC title

• H10P72/0404 Primary

  for general liquid treatment, e.g. etching followed by cleaning · CPC title