Composite spring structure to reinforce mechanical robustness of a MEMS device

Patent metadata

Field	Value
Publication number	US-11420866-B2
Application number	US-202016826550-A
Country	US
Kind code	B2
Filing date	Mar 23, 2020
Priority date	Mar 23, 2020
Publication date	Aug 23, 2022
Grant date	Aug 23, 2022

Abstract

Various embodiments of the present disclosure are directed towards a microelectromechanical systems (MEMS) structure including a composite spring. A first substrate underlies a second substrate. A third substrate overlies the second substrate. The first, second, and third substrates at least partially define a cavity. The second substrate comprises a moveable mass in the cavity and between the first and third substrates. The composite spring extends from a peripheral region of the second substrate to the moveable mass. The composite spring is configured to suspend the moveable mass in the cavity. The composite spring includes a first spring layer comprising a first crystal orientation, and a second spring layer comprising a second crystal orientation different than the first crystal orientation.

First claim

What is claimed is:

1. A method for forming a microelectromechanical systems (MEMS) structure, comprising:
providing a MEMS substrate that comprises monocrystalline silicon;
forming a polysilicon layer within the MEMS substrate;
bonding the MEMS substrate to a carrier substrate; and
patterning the MEMS substrate to delineate a composite spring of the MEMS substrate and a moveable mass of the MEMS substrate, wherein the composite spring includes a first spring layer comprising at least a segment of the MEMS substrate and a second spring layer comprising the polysilicon layer, wherein the composite spring extends continuously from a peripheral region of the MEMS substrate to the moveable mass.

2. The method according to claim 1 , wherein forming the polysilicon layer comprises:
patterning the MEMS substrate to define a plurality of openings within the MEMS substrate;
depositing the polysilicon layer over the MEMS substrate such that the polysilicon layer fills the plurality of openings; and
performing a planarization process into the polysilicon layer until a front-side of the MEMS substrate is reached.

3. The method according to claim 1 , wherein after bonding the MEMS substrate to the carrier substrate, a thinning process is performed on the MEMS substrate until an upper surface of the polysilicon layer is reached.

4. The method according to claim 1 , further comprising:
forming a third spring layer within the MEMS substrate, wherein the third spring layer is a part of the composite spring and comprises an amorphous material.

5. The method according to claim 1 , wherein patterning the MEMS substrate includes performing a deep reactive-ion etching (DRIE) process.

6. The method according to claim 4 , wherein the first spring layer, the second spring layer, and the third spring layer respectively have a same height.

7. The method according to claim 4 , wherein forming the third spring layer comprises:
patterning the MEMS substrate to define a plurality of openings within the MEMS substrate;
depositing the amorphous material within the openings and over the MEMS substrate; and
performing a planarization process into the amorphous material.

8. The method according to claim 4 , wherein the third spring layer directly contacts the first spring layer, wherein the first spring layer directly contacts the second spring layer.

9. A method for forming an integrated chip, comprising:
patterning a first side of a first substrate to from a plurality of openings in the first substrate, wherein the first substrate comprises a first crystal orientation;
forming a first spring layer in the plurality of openings, wherein the first spring layer comprises a second crystal orientation different than the first crystal orientation;
performing a thinning process on a second side of the first substrate opposite the first side of the first substrate; and
performing a patterning process on the second side of the first substrate to form a second spring layer and a composite spring, wherein the second spring layer is a segment of the first substrate and comprises the first crystal orientation, and wherein the composite spring comprises the first spring layer and the second spring layer.

10. The method according to claim 9 , wherein the thinning process is performed into the second side of the first substrate until the first spring layer is reached, wherein after the thinning process a thickness of the first substrate is equal to a thickness of the first spring layer.

11. The method according to claim 9 , further comprising:
bonding the first substrate to a second substrate;
forming contact electrodes on the second side of the first substrate adjacent to the composite spring; and
bonding a third substrate to the second substrate, wherein the first, second, and third substrates at least partially define a cavity, wherein the composite spring abuts the cavity.

12. The method according to claim 11 , wherein the patterning process is performed after bonding the first substrate to the second substrate.

13. The method according to claim 9 , further comprising:
forming a third spring layer in the first substrate, wherein the third spring layer is part of the composite spring, wherein the third spring layer contacts the first spring layer and/or the second spring layer.

14. The method according to claim 13 , wherein the third spring layer comprises a non-crystalline structure different then the first crystal orientation and the second crystal orientation.

15. The method according to claim 14 , wherein the third spring layer comprises amorphous silicon dioxide, a metal, or a polymer.

16. A method for forming an integrated chip, comprising:
forming a first spring layer into a first surface of a microelectromechanical systems (MEMS) substrate, wherein the MEMS substrate comprises a first material, and wherein the first spring layer comprises a second material different than the first material;
forming a second spring layer into the first surface of the MEMS substrate, where the second spring layer is adjacent to the first spring layer, and wherein the second spring layer comprises a third material different than the first and second materials;
bonding the MEMS substrate to a carrier substrate; and
performing a patterning process on the MEMS substrate while the MEMS substrate is disposed on the carrier substrate to define a third spring layer, wherein the third spring layer comprises the first material.

17. The method according to claim 16 , wherein a composite spring comprises the first, second, and third spring layers, wherein the patterning process defines a moveable mass that is suspended in a cavity by the composite spring.

18. The method according to claim 16 , wherein the first and second materials respectively have crystal orientations different from one another and the third material has a non-crystalline structure.

19. The method according to claim 16 , further comprising:
performing a grinding process on a second surface of the MEMS substrate opposite the first surface, wherein the grinding process is performed into the second surface until surfaces of the first and second spring layers are reached.

20. The method according to claim 16 , wherein the first, second, and third spring layers have a same thickness.

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Chang Kuei-Sung
• Tsai Shang-Ying
• Mao Wei-Jhih

Classifications

• B81B3/0067

  Mechanical properties · CPC title

• B81B2201/0235

  Accelerometers · CPC title

• B81C1/0019

  Flexible or deformable structures not provided for in groups B81C1/00142 - B81C1/00182 · CPC title

• B81B2201/0257

  Microphones or microspeakers · CPC title

• B81B2201/045

  Optical switches · CPC title