Systems and methods for dynamic random access memory (dram) sub-channels
US-2017255552-A1 · Sep 7, 2017 · US
US11416437B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11416437-B2 |
| Application number | US-201916720976-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 19, 2019 |
| Priority date | Dec 19, 2018 |
| Publication date | Aug 16, 2022 |
| Grant date | Aug 16, 2022 |
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An apparatus is provided, comprising a plurality of memory devices and a buffering device that permits memory devices with a variety of physical dimensions and memory formats to be used in an industry-standard memory module format. The buffering device includes memory interface circuitry and at least one first-in first-out (FIFO) or multiplexer circuit. The apparatus further comprises a parallel bus connecting the buffering device to the plurality of memory devices. The parallel bus includes a plurality of independent control lines, each coupling the memory interface circuitry to a corresponding subset of a plurality of first subsets of the plurality of memory devices. The parallel bus further includes a plurality of independent data channels, each coupling the at least one FIFO circuit or multiplexer circuit to a corresponding subset of a plurality of second subsets of the plurality of memory devices.
Opening claim text (preview).
We claim: 1. An apparatus comprising: a plurality of memory devices; a buffering device including: memory interface circuitry, and at least one first-in first-out (FIFO) circuit or multiplexer circuit; and a parallel bus operably connecting the buffering device to the plurality of memory devices, the parallel bus including: a plurality of independent control lines, each of the plurality of independent control lines operably coupling the memory interface circuitry to a corresponding subset of a plurality of first subsets of the plurality of memory devices, and a plurality of independent data channels, each of the plurality of independent data channels operably coupling the at least one FIFO circuit or multiplexer circuit to a corresponding subset of a plurality of second subsets of the plurality of memory devices, wherein each of the plurality of first subsets intersects each of the plurality of second subsets. 2. The apparatus of claim 1 , wherein each of the first subsets of the plurality of memory devices includes memory devices of a single memory type. 3. The apparatus of claim 1 , wherein each of the second subsets of the plurality of memory devices includes memory devices having different memory types. 4. The apparatus of claim 3 , wherein the different memory types comprise at least one of NAND, NOR, phase change memory (PCM), magnetoresistive memory (MRAM), DRAM, SRAM, or ferroelectric memory, or a combination thereof. 5. The apparatus of claim 1 , wherein the buffering device includes a channel interface configured to communicate with a connected host device using a DDR5 protocol. 6. The apparatus of claim 1 , wherein the memory interface circuitry is configured to perform processing in memory functions in one or more of the plurality of memory devices. 7. The apparatus of claim 1 , wherein the memory interface circuitry is configured to perform atomic memory functions in one or more of the plurality of memory devices. 8. The apparatus of claim 1 , wherein the plurality of memory devices includes chip scale packaging memory devices. 9. The apparatus of claim 1 , wherein the plurality of memory devices includes one or more memory devices lacking error correcting code (ECC) circuitry, and further wherein the memory interface circuitry is to perform error correcting in the one or more memory devices. 10. The apparatus of claim 1 , wherein the buffering device is configured to map physical addresses of the plurality of memory devices to logical addresses. 11. The apparatus of claim 1 , wherein the buffering device is configured to remap physical addresses of the plurality of memory devices in response to a detection of a bad bit in one or more of the plurality of memory devices. 12. A method, comprising: receiving a plurality of signals at a buffering device of an apparatus, the plurality of signals including command/address signals and data signals; directing, with memory interface circuitry of the buffering device, the command/address signals via a plurality of independent control lines to a first subset of a plurality memory devices of the apparatus; directing, with at least one first-in first-out (FIFO) circuit or multiplexer circuit of the buffering device, the data signals via a plurality of independent data channels to a second subset of the plurality of memory devices, wherein each of the plurality of first subsets intersects each of the plurality of second subsets. 13. The method of claim 12 , wherein the first subset of the plurality of memory devices includes memory devices of a single memory type. 14. The method of claim 12 , wherein the second subset of the plurality of memory devices includes memory devices having different memory types. 15. The method of claim 14 , wherein the different memory types comprise at least one of NAND, NOR, phase change memory (PCM), magnetoresistive memory (MRAM), DRAM, SRAM, or ferroelectric memory, or a combination thereof. 16. The method of claim 12 , wherein the plurality of signals is communicated from a connected host device using a DDR5 protocol. 17. The method of claim 12 , further comprising performing, with the memory interface circuitry, processing-in-memory functions in one or more of the plurality of memory devices. 18. The method of claim 12 , further comprising performing, with the memory interface circuitry, atomic memory functions in one or more of the plurality of memory devices. 19. The method of claim 13 , wherein the plurality of memory devices includes chip scale packaging memory devices. 20. The method of claim 13 , wherein the plurality of memory devices includes one or more memory devices lacking error correcting code (ECC) circuitry, and further comprising performing, with the memory interface circuitry, error correcting functions in the one or more memory devices. 21. The method of claim 12 , further comprising mapping, with the buffering device, physical addresses of the plurality of memory devices to logical addresses. 22. The method of claim 12 , further comprising remapping, with the buffering device, physical addresses of the plurality of memory devices in response to a detection of a bad bit in one or more of the plurality of memory devices. 23. An apparatus, comprising: a plurality of memory devices arranged into a first channel and a second channel; first and second buffering devices corresponding to the first and second channels, respectively, each buffering device including: memory interface circuitry, and at least one first-in first-out (FIFO) circuit or multiplexer circuit; and a parallel bus operably connecting the first and second buffering device to memory devices of the first and second channels, respectively, the parallel bus including: a plurality of independent control lines, each of the plurality of independent control lines operably coupling the memory interface circuitry of one of the first and second buffering devices to a corresponding subset of a plurality of first subsets of the plurality of memory devices, and a plurality of independent data channels, each of the plurality of independent data channels operably coupling the at least one FIFO circuit or multiplexer circuit of one of the first and second buffering devices to a corresponding subset of a plurality of second subsets of the plurality of memory devices, wherein each of the plurality of first subsets intersects each of the plurality of second subsets.
using arrangements adapted for a specific error detection or correction feature · CPC title
in sector programmable memories, e.g. flash disk (G06F11/1072 takes precedence) · CPC title
Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers · CPC title
Data bus control circuits, e.g. precharging, presetting, equalising · CPC title
using buffers · CPC title
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