Films comprising bright silver based quaternary nanostructures

US11407940B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-11407940-B2
Application numberUS-202117166788-A
CountryUS
Kind codeB2
Filing dateFeb 3, 2021
Priority dateDec 22, 2020
Publication dateAug 9, 2022
Grant dateAug 9, 2022

How to read this patent

A practical reading order for non-experts. Skip the full description unless you need deep technical detail.

  1. Title

    What the patent document calls the invention.

  2. Abstract

    A short plain-language summary of the technical disclosure.

  3. Assignees and inventors

    Who owns or filed the patent and who is credited as inventor.

  4. Key dates

    Filing, priority, publication, and grant dates set the timeline.

  5. First independent claim

    The legal scope of protection — read this for what is actually claimed.

  6. CPC / IPC classifications

    Technology tags used to group this patent with similar filings.

  7. Citations and related patents

    Prior art links and similar publications in this corpus.

Abstract

Official abstract text for this publication.

Disclosed are films comprising Ag, In, Ga, and S (AIGS) nanostructures and at least one ligand bound to the nanostructures. In some embodiment, the AIGS nanostructures have a photon conversion efficiency of greater than 32% and a peak wavelength emission of 480-545 nm. In some embodiments, the nanostructures have an emission spectrum with a FWHM of 24-38 nm.

First claim

Opening claim text (preview).

What is claimed is: 1. A film comprising Ag, In, Ga, and S (AIGS) nanostructures, at least one ligand, and exhibiting a photon conversion efficiency (PCE) of greater than 32% at a peak emission wavelength of 480-545 nm, when excited using a blue light source with a wavelength of about 450 nm, wherein the nanostructures have an emission spectrum with a full width half maximum (FWHM) of less than 40 nm, and wherein the average diameter of the nanostructures is less than 10 nm by TEM. 2. The film of claim 1 , wherein the nanostructures have an emission spectrum with a FWHM of 24-38 nm. 3. The film of claim 1 , wherein the nanostructures have an emission spectrum with a FWHM of 27-32 nm. 4. The film of claim 1 , wherein the nanostructures have a quantum yield (QY) of 85-95%. 5. The film of claim 1 , wherein the nanostructures have a QY of about 86-94%. 6. The film of claim 1 , wherein the nanostructures have an OD 450 /mass greater than or equal to 0.8 mL·mg −1 ·cm −1 , where OD 450 is the optical density of the film when irradiated with electromagnetic energy having of wavelength of 450 nm. 7. The film of claim 6 , wherein the nanostructures have an OD 450 /mass in the inclusive range 0.8-2.5 mL·mg −1 ·cm −1 . 8. The film of claim 7 , wherein the nanostructures have an OD 450 /mass in the inclusive range 0.87-1.9 mL·mg −1 ·cm −1 . 9. The film of claim 1 , wherein the average diameter is about 5 nm. 10. The film of claim 1 , wherein at least about 80% of the emission is band-edge emission. 11. The film of claim 1 , wherein at least about 90% of the emission is band-edge emission. 12. The film of claim 11 , wherein 92-98% of the emission is band-edge emission. 13. The film of claim 11 , wherein 93-96% of the emission is band-edge emission. 14. The film of claim 1 , wherein the at least one ligand is a polyamino ligand. 15. The film of claim 14 , wherein the at least one polyamino-ligand is a polyamino alkane, a polyamino-cycloalkane, a polyamino heterocyclic compound, a polyamino functionalized silicone, or a polyamino substituted ethylene glycol. 16. The film of claim 14 , wherein the polyamino-ligand is a C 2-20 alkane or C 2-20 cycloalkane substituted by two or three amino groups and optionally containing one or two amino groups in place of a carbon group. 17. The film of claim 16 , wherein the polyamino-ligand is 1,3-cyclohexanebis(methylamine), 2,2-dimethyl-1,3-propanediamine, tris(2-aminoethyl)amine, or 2-methyl-1,5-diaminopentane. 18. The film of claim 1 , wherein the at least one ligand is a compound of Formula I: wherein: x is 1 to 100; y is 0 to 100; and R 2 is C 1-20 alkyl. 19. The film of claim 18 , wherein x=19, y=3, and R 2 ═—CH 3 . 20. The film of claim 1 , wherein the at least one ligand is (3-aminopropyl)trimethoxysilane); (3-mercaptopropyl)triethoxysilane; DL-α-lipoic acid; 3,6-dioxa-1,8-octanedithiol; 6-mercapto-1-hexanol; methoxypolyethylene glycol amine; poly(ethyleneglycol) methyl ether thiol; diethyl phenylphosphonite; dibenzyl N,N-diisopropylphosphoramidite; di-tert-butyl N,N-diisopropylphosphoramidite; tris(2-carboxyethyl)phosphine hydrochloride; poly(ethylene glycol) methyl ether thiol; methoxypolyethylene glycol amine; acrylamide; or polyethylenimine. 21. The film of claim 1 , wherein the at least one ligand is a combination of amino-polyalkylene oxide and methoxypolyethylene glycol amine; amino-polyalkylene oxide and 6-mercapto-1-hexanol; amino-polyalkylene oxide and (3-mercaptopropyl)triethoxysilane; or 6-mercapto-1-hexanol and methoxypolyethylene glycol amine. 22. The film of claim 1 , further comprising at least one organic resin. 23. The film composition of claim 22 , wherein the at least one organic resin is cured. 24. The film composition of claim 1 , wherein the film is 5-15 μm thick. 25. The film composition of claim 1 , further comprising at least one monomer incorporated into the at least one ligand coating the AIGS nanostructures surface. 26. The film composition of claim 25 , wherein the at least one monomer is an acrylate. 27. The film composition of claim 26 , wherein the monomer is at least one of ethyl acrylate, hexanediol diacrylate (HDDA), tetrahydrofurfuryl acrylate, tri(propylene glycol) diacrylate, 1,4-bis(acryloyloxy)butane or isobornyl acrylate. 28. The film composition of claim 1 , which exhibits a blue light absorption at about 450 nm of greater than 95%. 29. The film composition of claim 1 , wherein the film is encapsulated between first and second barrier layers. 30. The film composition of claim 29 , wherein the PCE of the film is greater than 32% to 39%.

Assignees

Inventors

Classifications

  • Manufacture or treatment of nanostructures · CPC title

  • Nanotechnology for materials or surface science, e.g. nanocomposites · CPC title

  • Nanooptics, e.g. quantum optics or photonic crystals · CPC title

  • made of materials engineered to provide properties not available in nature, e.g. metamaterials · CPC title

  • Micro- or nanomaterials · CPC title

Patent family

Related publications grouped by family.

External sources

Frequently asked questions

Answers are generated from the same data shown on this page.

What does patent US11407940B2 cover?
Disclosed are films comprising Ag, In, Ga, and S (AIGS) nanostructures and at least one ligand bound to the nanostructures. In some embodiment, the AIGS nanostructures have a photon conversion efficiency of greater than 32% and a peak wavelength emission of 480-545 nm. In some embodiments, the nanostructures have an emission spectrum with a FWHM of 24-38 nm.
Who is the assignee on this patent?
Nanosys Inc
What technology area does this patent fall under?
Primary CPC classification C09K11/621. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Tue Aug 09 2022 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 12 related publications on this page (citations in our corpus or others sharing the same primary CPC).