Copper-indium-gallium-chalcogenide nanoparticle precursors for thin-film solar cells

Patent metadata

Field	Value
Publication number	US-9466743-B2
Application number	US-201414195651-A
Country	US
Kind code	B2
Filing date	Mar 3, 2014
Priority date	Mar 4, 2013
Publication date	Oct 11, 2016
Grant date	Oct 11, 2016

Abstract

Nanoparticles containing IUPAC group 11 ions, group 13 ions and sulfur ions are synthesized by adding metal salts and an alkanethiol in an organic solvent and promoting the reaction by applying heat. Nanoparticles are formed at temperatures as low as 200° C. The nanoparticles may be thermally annealed for a certain amount of time at a temperature lower than the reaction temperature (usually ˜40° C. lower) to improve the topology and narrow the size distribution. After the reaction is complete, the nanoparticles may be isolated by the addition of a non-solvent and re-dispersed in organic solvents including toluene, chloroform and hexane to form a nanoparticle ink. Additives may be incorporated in the reaction solution to tailor the final ink viscosity.

First claim

We claim:

1. A composition comprising a population of nanoparticles having the empirical formula CuIn x Ga 1-x S 2 wherein (0<x<1), wherein each nanoparticle comprises an organic ligand layer bound to the surface of the nanoparticle, and wherein the organic ligand layer consists essentially of thiols and the thiols have a boiling point of less than 100° C.

2. A composition according to claim 1 , wherein the thiols comprise ten or fewer carbon atoms.

3. A composition according to claim 1 , wherein the thiols comprise eight or fewer carbon atoms.

4. A composition according to claim 1 , wherein the thiols comprise six or fewer carbon atoms.

5. A composition according to claim 1 , wherein the thiols are ejected from the nanoparticles when the nanoparticles are heated to a temperature below 300° C.

6. A composition according claim 1 , wherein the population exhibits an emission spectrum having a full width at half maximum (FWHM) of less than about 200 nm.

7. A composition according claim 1 , wherein the population exhibits an emission spectrum having a full width at half maximum (FWHM) of less than about 100 nm.

8. A process for preparing nanoparticles, comprising: mixing a copper salt, an indium salt, a gallium salt, and a thiol in an organic solvent and heating the solvent to a temperature of not greater than 150° C.

9. A process according to claim 8 , further comprising adding a solution of tri-n-octylphosphine sulfide (TOP:S) to the solvent.

10. A process according to claim 8 , wherein the thiol has a boiling point of less than 150° C.

11. A process according to claim 8 , wherein the thiol has a boiling point of less than 100° C.

12. A process according to claim 8 , wherein the thiol comprises ten or fewer carbon atoms.

13. A process according to claim 8 , wherein the thiol comprises eight or fewer carbon atoms.

14. A process according to claim 8 , wherein the thiol comprises six or fewer carbon atoms.

15. A process for preparing nanoparticles, comprising: mixing a copper salt, an indium salt, a gallium salt, and a thiol having a boiling point of less than 150° C. in an organic solvent and heating the solvent to a temperature of not greater than 220° C.

16. A process for preparing nanoparticles, comprising: mixing a copper salt, an indium salt, a gallium salt, and a thiol having a boiling point of less than 100° C. in an organic solvent and heating the solvent to a temperature of not greater than 220° C.

Assignees

• Nanoco Technologies Ltd
• Nanoco Technologies Ltd

Inventors

• Harris James
• Newman Christopher
• Masala Ombretta
• Wylde Laura
• Pickett Nigel

Classifications

• H10P14/3461

  Nanoparticles · CPC title

• H10P14/3436

  being chalcogenide semiconductor materials not being oxides, e.g. ternary compounds · CPC title

• H10P14/265

  using solutions · CPC title

• H10F10/167

  comprising Group I-III-VI materials, e.g. CdS/CuInSe2 [CIS] heterojunction photovoltaic cells · CPC title

• H10F77/126 Primary

  comprising only Group I-III-VI chalcopyrite materials, e.g. CuInSe2, CuGaSe2 or CuInGaSe2 [CIGS] · CPC title