DC bias in plasma process

Patent metadata

Field	Value
Publication number	US-11404245-B2
Application number	US-201816177530-A
Country	US
Kind code	B2
Filing date	Nov 1, 2018
Priority date	Feb 28, 2018
Publication date	Aug 2, 2022
Grant date	Aug 2, 2022

Abstract

Embodiments described herein relate to plasma processes. A plasma process includes generating a plasma containing negatively charged oxygen ions. A substrate is exposed to the plasma. The substrate is disposed on a pedestal while being exposed to the plasma. While exposing the substrate to the plasma, a negative direct current (DC) bias voltage is applied to the pedestal to repel the negatively charged oxygen ions from the substrate.

First claim

What is claimed is:

1. A method comprising:
generating a first remote plasma containing positively charged hydrogen ions, neutral oxygen radicals and negatively charged oxygen ions;
performing a first plasma process on a substrate, the substrate containing negatively charged fluorine ions and being disposed on a pedestal while performing the first plasma process, wherein performing the first plasma process comprises:
filtering the first remote plasma by a gas distribution plate to expose the substrate to the positively charged hydrogen ions, the neutral oxygen radicals and the negatively charged oxygen ions of the first remote plasma; and

while performing the first plasma process, applying a first negative direct current (DC) bias voltage to the pedestal to remove the negatively charged fluorine ions from the substrate and to repel the negatively charged oxygen ions from the substrate.

2. The method of claim 1 , wherein the negatively charged fluorine ions react with the positively charged hydrogen ions to form hydrofluoric acid.

3. The method of claim 1 , further comprising pumping the negatively charged fluorine ions and the positively charged hydrogen ions from a chamber containing the substrate.

4. The method of claim 1 , wherein the substrate has a pad comprising aluminum and copper, and wherein the pad contains the negatively charged fluorine ions within the pad.

5. The method of claim 1 , wherein the first negative DC bias voltage is between about −1V and about −50V.

6. The method of claim 1 , further comprising, before performing the first plasma process on the substrate, generating a UV light in the first remote plasma.

7. The method of claim 1 , wherein the generating the first remote plasma comprises igniting a process gas comprising O 2 gas and H 2 gas.

8. The method of claim 7 , wherein a flow rate of the process gas is from about 200 sccm to about 9000 sccm.

9. A method comprising:
generating a first remote plasma containing positively charged hydrogen ions, neutral oxygen radicals and negatively charged oxygen ions;
generating a UV light in the first remote plasma;
performing a first plasma process on a substrate, the substrate containing negatively charged fluorine ions and being disposed on a pedestal while performing the first plasma process, wherein performing the first plasma process comprises:
filtering the first remote plasma by a gas distribution plate to expose the substrate to the positively charged hydrogen ions, the neutral oxygen radicals and the negatively charged oxygen ions of the first remote plasma; and
repelling the UV light by the gas distribution plate; and

while performing the first plasma process, applying a first negative direct current (DC) bias voltage to the pedestal to remove the negatively charged fluorine ions from the substrate and to repel the negatively charged oxygen ions from the substrate.

10. The method of claim 9 , further comprising:
forming a layer on the substrate;
depositing a photoresist on the layer; and
removing the photoresist comprising performing the first plasma process.

11. The method of claim 9 , wherein the generating the first remote plasma comprises igniting a process gas comprising O 2 gas and H 2 gas.

12. The method of claim 11 , wherein a flow rate of the process gas is from about 200 sccm to about 9000 sccm.

13. The method of claim 9 , further comprising, while performing the first plasma process, pulsing the first negative DC bias voltage.

14. The method of claim 9 , further comprising pumping the negatively charged oxygen ions from a chamber containing the substrate.

15. A method comprising:
generating a remote plasma containing positively charged hydrogen ions, neutral oxygen radicals and negatively charged oxygen ions;
performing a plasma process on a substrate, the substrate comprising a conductive feature, the conductive feature comprising negatively charged fluorine ions, wherein performing the plasma process comprises filtering the remote plasma by a gas distribution plate to expose the substrate to the positively charged hydrogen ions, the neutral oxygen radicals and the negatively charged oxygen ions of the remote plasma, the substrate being disposed on a pedestal while performing the plasma process; and
while performing the plasma process, heating the substrate by a heating element embedded in the pedestal; and
while performing the plasma process, applying a negative direct current (DC) bias voltage to the pedestal to remove the negatively charged fluorine ions from the conductive feature and to repel the negatively charged oxygen ions from the substrate.

16. The method of claim 15 , wherein the generating the remote plasma comprises igniting a process gas comprising an oxygen-containing gas and a hydrogen-containing gas.

17. The method of claim 15 , further comprising, while performing the plasma process, pulsing the negative DC bias voltage.

18. The method of claim 15 , further comprising pumping the negatively charged oxygen ions from a chamber containing the substrate.

19. The method of claim 15 , wherein removed negatively charged-fluorine ions react with the positively charged hydrogen ions to form HF gas.

20. The method of claim 19 , further comprising removing the HF gas from a chamber containing the substrate.

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Pan Sheng-Liang
• Chen Bing-Hung
• Hung Chia-Yang
• Shieh Jyu-Horng
• Suen Shu-Huei
• Jang Syun-Ming
• Kuo Jack Kuo-Ping

Classifications

• H10P95/00

  Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass · CPC title

• H10P70/234

  the processing being the formation of vias or contact holes · CPC title

• H10P50/287

  by chemical means · CPC title

• H10P14/6319

  Formation by plasma treatments, e.g. plasma oxidation of the substrate · CPC title

• H10P14/6309

  of silicon in uncombined form, i.e. pure silicon · CPC title