Semiconductor device and method for manufacturing semiconductor device

Patent metadata

Field	Value
Publication number	US-11398563-B2
Application number	US-201816225186-A
Country	US
Kind code	B2
Filing date	Dec 19, 2018
Priority date	Jun 27, 2018
Publication date	Jul 26, 2022
Grant date	Jul 26, 2022

Abstract

Examples of a semiconductor device includes a transistor region formed in a semiconductor substrate having a first conductivity type drift layer, and a diode region formed to be adjacent to the transistor region in the semiconductor substrate, wherein the diode region has a second conductivity type anode layer formed on the drift layer and a first conductivity type cathode layer formed on the lower side of the drift layer, and the cathode layer has an adjacent region contacting the transistor region, the adjacent region having a depth, from a lower surface of the semiconductor substrate, which becomes shallower toward the transistor region and having first conductivity type impurity concentration which decreases toward the transistor region.

First claim

The invention claimed is:

1. A semiconductor device comprising:
a transistor region formed in a semiconductor substrate having a first conductivity type drift layer; and
a diode region formed to be adjacent to the transistor region in the semiconductor substrate, wherein
the transistor region has a second conductivity type base layer formed on the drift layer, a diffusion layer formed on the base layer and having higher second conductivity type impurity concentration than the base layer, a first conductivity type emitter layer formed on the base layer, a gate electrode contacting the base layer via an insulation film, and a second conductivity type collector layer formed on a lower side of the drift layer,
the diode region has a second conductivity type anode layer formed on the drift layer and a first conductivity type cathode layer formed on the lower side of the drift layer,
the cathode layer has an adjacent region contacting the transistor region, the adjacent region having a depth, from a lower surface of the semiconductor substrate, which becomes shallower toward the transistor region and having a first conductivity type impurity concentration which decreases toward the transistor region, the adjacent region transitions along an inclined upper surface from the cathode layer to the collector layer,
the base layer has a higher second conductivity type impurity concentration than that of the anode layer, and
a barrier metal is formed on the diffusion layer and the emitter layer in the transistor region but is not formed on the anode layer in the diode region.

2. The semiconductor device according to claim 1 , wherein
the cathode layer includes a non-adjacent region contacting the adjacent region and having a constant depth from the lower surface of the semiconductor substrate.

3. The semiconductor device according to claim 1 , further comprising,
on the adjacent region, a second conductivity type layer having same impurity concentration as the collector layer.

4. The semiconductor device according to claim 3 , further comprising
a first conductivity type buffer layer contacting an upper surface of the collector layer, an upper surface of the second conductivity type layer, and an upper surface of the cathode layer.

5. The semiconductor device according to claim 1 , further comprising:
an upper electrode directly contacting the barrier metal and the anode layer.

6. The semiconductor device according to claim 1 , further comprising,
between the drift layer and the base layer, a first conductivity type carrier storage layer having higher first conductivity type impurity concentration than the drift layer.

7. The semiconductor device according to claim 1 , further comprising:
an upper electrode directly contacting the barrier metal and the anode layer, wherein
the barrier metal layer is between the upper electrode and each of the diffusion layer and the emitter layer in the transistor region but is not formed between the upper electrode and the anode layer in the diode region.

8. A semiconductor device comprising:
a transistor region formed in a semiconductor substrate having a first conductivity type drift layer; and
a diode region formed to be adjacent to the transistor region in the semiconductor substrate, wherein
the transistor region has a second conductivity type base layer formed on the drift layer, a diffusion layer formed on the base layer and having higher second conductivity type impurity concentration than the base layer, a first conductivity type emitter layer formed on the base layer, a gate electrode contacting the base layer via an insulation film, and a second conductivity type collector layer formed on a lower side of the drift layer,
the diode region has a second conductivity type anode layer formed on the drift layer, a first conductivity type cathode layer formed on the lower side of the drift layer, a plurality of trenches penetrating the anode layer from an upper surface of the anode layer and reaching the drift layer, and dummy gate electrodes embedded in the plurality of trenches via dummy gate insulating films respectively, and
the cathode layer has an adjacent region contacting the transistor region, the adjacent region having a depth, from a lower surface of the semiconductor substrate, which becomes shallower toward the transistor region and having first conductivity type impurity concentration which decreases toward the transistor region,
an impurity concentration of the base layer is higher than an impurity concentration of the anode layer, and
the adjacent region is provided over at least an entire area between two adjacent trenches.

Assignees

• Mitsubishi Electric Corp

Inventors

• Kamibaba Ryu
• Takahashi Tetsuo
• Furukawa Akihiko

Classifications

• H10P30/22

  using masks · CPC title

• H10D84/811 Primary

  Combinations of field-effect devices and one or more diodes, capacitors or resistors · CPC title

• H10D62/141

  Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs · CPC title

• H10D30/668

  having trench gate electrodes, e.g. UMOS transistors · CPC title

• H10D8/422

  PN diodes having the PN junctions in mesas · CPC title