Metal on metal multiple patterning

US11398378B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-11398378-B2
Application numberUS-202017023853-A
CountryUS
Kind codeB2
Filing dateSep 17, 2020
Priority dateSep 7, 2018
Publication dateJul 26, 2022
Grant dateJul 26, 2022

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

The present disclosure relates to a structure which includes a first metal layer patterned as a mandrel, a dielectric spacer on the first metal layer, and a second metal layer on the dielectric spacer.

First claim

Opening claim text (preview).

What is claimed: 1. A method, comprising: patterning a first metal layer as a mandrel; forming a dielectric spacer on the first metal layer; forming a second metal layer on the dielectric spacer; and forming a metal cap on the second metal layer. 2. The method of claim 1 , further comprising forming at least one airgap between patterned sections of the first metal layer. 3. The method of claim 2 , wherein the at least one airgap is surrounded by the dielectric spacer. 4. The method of claim 1 , further comprising forming nitrogen doped carbide on sections of the mandrel. 5. The method of claim 1 , further comprising forming a plurality of pinched off airgaps between sections of the mandrel by deposition of a dielectric material between sections of the mandrel. 6. The method of claim 1 , wherein the dielectric spacer comprises a low-k dielectric material. 7. The method of claim 1 , wherein the first metal layer is a same material as the second metal layer. 8. The method of claim 7 , wherein the first metal layer and the second metal layer comprises one of cobalt, ruthenium, nickel, aluminum, tungsten, and tantalum. 9. The method of claim 1 , wherein the first metal layer is a different material than the second metal layer. 10. The method of claim 1 , further comprising forming a plurality of cuts in the mandrel. 11. The method of claim 1 , wherein the metal cap comprises tantalum. 12. A method, comprising: forming a metal mandrel with cuts along its longitudinal extent; forming a metal layer on the metal mandrel; forming a plurality of low-k dielectric spacers on sidewalls of the metal mandrel; forming a metal cap on the metal layer; and forming at least one airgap between sections of patterned metal in the metal mandrel, wherein the at least one airgap is entirely surrounded by the low-k dielectric spacers. 13. The method of claim 12 , wherein the metal mandrel and the metal layer comprises cobalt. 14. The method of claim 12 , wherein the metal mandrel is a different material than the metal layer. 15. A method comprising: forming a mandrel with cuts along its longitudinal extent; forming a metal layer on the mandrel; forming a plurality of low-k dielectric spacers on sidewalls of the mandrel; and forming a metal cap on the metal layer, wherein the mandrel is a different material than the metal layer. 16. The method of claim 15 , further comprising depositing a metal cap on the plurality of low-k dielectric spacers and which entirely surrounds the at least one airgap. 17. The method of claim 16 , further comprising forming nitrogen doped carbide on sections of the mandrel. 18. The method of claim 15 , further comprising forming at least one airgap which includes a plurality of pinched off airgaps formed by deposition of a low-k material between sections of the mandrel. 19. The method of claim 15 , wherein the mandrel is formed by patterning a film stack. 20. The method of claim 19 , wherein the mandrel comprises cobalt and the metal layer comprises copper.

Assignees

Inventors

Classifications

  • characterised by the processes involved to create the masks · CPC title

  • using subtractive patterning of the conductive members · CPC title

  • Interconnections with multiple fill metals, e.g. having different metals in wide and narrow interconnections, or having different metals in vias and in trenches · CPC title

  • comprising air gaps · CPC title

  • of dielectric parts comprising air gaps · CPC title

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Frequently asked questions

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What does patent US11398378B2 cover?
The present disclosure relates to a structure which includes a first metal layer patterned as a mandrel, a dielectric spacer on the first metal layer, and a second metal layer on the dielectric spacer.
Who is the assignee on this patent?
Globalfoundries Inc
What technology area does this patent fall under?
Primary CPC classification H10P76/405. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Jul 26 2022 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 6 related publications on this page (citations in our corpus or others sharing the same primary CPC).