Airgap formation in BEOL interconnect structure using sidewall image transfer
US-10490447-B1 · Nov 26, 2019 · US
US11398378B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11398378-B2 |
| Application number | US-202017023853-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 17, 2020 |
| Priority date | Sep 7, 2018 |
| Publication date | Jul 26, 2022 |
| Grant date | Jul 26, 2022 |
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
What the patent document calls the invention.
A short plain-language summary of the technical disclosure.
Who owns or filed the patent and who is credited as inventor.
Filing, priority, publication, and grant dates set the timeline.
The legal scope of protection — read this for what is actually claimed.
Technology tags used to group this patent with similar filings.
Prior art links and similar publications in this corpus.
Official abstract text for this publication.
The present disclosure relates to a structure which includes a first metal layer patterned as a mandrel, a dielectric spacer on the first metal layer, and a second metal layer on the dielectric spacer.
Opening claim text (preview).
What is claimed: 1. A method, comprising: patterning a first metal layer as a mandrel; forming a dielectric spacer on the first metal layer; forming a second metal layer on the dielectric spacer; and forming a metal cap on the second metal layer. 2. The method of claim 1 , further comprising forming at least one airgap between patterned sections of the first metal layer. 3. The method of claim 2 , wherein the at least one airgap is surrounded by the dielectric spacer. 4. The method of claim 1 , further comprising forming nitrogen doped carbide on sections of the mandrel. 5. The method of claim 1 , further comprising forming a plurality of pinched off airgaps between sections of the mandrel by deposition of a dielectric material between sections of the mandrel. 6. The method of claim 1 , wherein the dielectric spacer comprises a low-k dielectric material. 7. The method of claim 1 , wherein the first metal layer is a same material as the second metal layer. 8. The method of claim 7 , wherein the first metal layer and the second metal layer comprises one of cobalt, ruthenium, nickel, aluminum, tungsten, and tantalum. 9. The method of claim 1 , wherein the first metal layer is a different material than the second metal layer. 10. The method of claim 1 , further comprising forming a plurality of cuts in the mandrel. 11. The method of claim 1 , wherein the metal cap comprises tantalum. 12. A method, comprising: forming a metal mandrel with cuts along its longitudinal extent; forming a metal layer on the metal mandrel; forming a plurality of low-k dielectric spacers on sidewalls of the metal mandrel; forming a metal cap on the metal layer; and forming at least one airgap between sections of patterned metal in the metal mandrel, wherein the at least one airgap is entirely surrounded by the low-k dielectric spacers. 13. The method of claim 12 , wherein the metal mandrel and the metal layer comprises cobalt. 14. The method of claim 12 , wherein the metal mandrel is a different material than the metal layer. 15. A method comprising: forming a mandrel with cuts along its longitudinal extent; forming a metal layer on the mandrel; forming a plurality of low-k dielectric spacers on sidewalls of the mandrel; and forming a metal cap on the metal layer, wherein the mandrel is a different material than the metal layer. 16. The method of claim 15 , further comprising depositing a metal cap on the plurality of low-k dielectric spacers and which entirely surrounds the at least one airgap. 17. The method of claim 16 , further comprising forming nitrogen doped carbide on sections of the mandrel. 18. The method of claim 15 , further comprising forming at least one airgap which includes a plurality of pinched off airgaps formed by deposition of a low-k material between sections of the mandrel. 19. The method of claim 15 , wherein the mandrel is formed by patterning a film stack. 20. The method of claim 19 , wherein the mandrel comprises cobalt and the metal layer comprises copper.
characterised by the processes involved to create the masks · CPC title
using subtractive patterning of the conductive members · CPC title
Interconnections with multiple fill metals, e.g. having different metals in wide and narrow interconnections, or having different metals in vias and in trenches · CPC title
comprising air gaps · CPC title
of dielectric parts comprising air gaps · CPC title
Related publications grouped by family.
Answers are generated from the same data shown on this page.