Chemical mechanical polishing pad

Patent metadata

Field	Value
Publication number	US-11396081-B2
Application number	US-201916415464-A
Country	US
Kind code	B2
Filing date	May 17, 2019
Priority date	Apr 25, 2014
Publication date	Jul 26, 2022
Grant date	Jul 26, 2022

Abstract

A chemical mechanical polishing pad is provided containing a polishing layer having a polishing surface, wherein the polishing layer comprises a reaction product of ingredients, including: an isocyanate terminated urethane prepolymer; and, a curative system, containing a high molecular weight polyol curative; and, a difunctional curative.

First claim

We claim:

1. A chemical mechanical polishing pad adapted for polishing a substrate selected from the group consisting of at least one of a magnetic substrate, an optical substrate and a semiconductor substrate, comprising:
a polishing layer adapted for polishing a substrate selected from the group consisting of at least one of a magnetic substrate, an optical substrate and a semiconductor substrate having a polishing surface, wherein the polishing layer comprises a reaction product of ingredients, comprising:
an isocyanate terminated urethane prepolymer having 8.75 to 9.25 wt % unreacted NCO groups; and,
a curative system consisting essentially of:
20 to 30 wt % of a high molecular weight polyol curative, wherein the high molecular weight polyol curative has a number average molecular weight, Mn, of 10,000 to 12,000; and wherein the high molecular weight polyol curative has an average of 6 hydroxyl groups per molecule; and,
70 to 80 wt % of a 4,4′-methylene-bis-(2-chloroaniline) (MbOCA) difunctional curative wherein the polishing layer exhibits a density of greater than 0.6 g/cm 3 ; a Shore D hardness of 40 to 60; an elongation to break of 125 to 300%; a G′ 30/90 ratio of 1.5 to 4; a tensile modulus of 100 to 300 (MPa); a wet cut rate of 4 to 10 μm/min; and, a 300 mm TEOS removal rate to Shore D hardness ratio (TEOS 300-RR /Shore D hardness) of ≥28.

2. The chemical mechanical polishing pad of claim 1 , wherein the curative system has a plurality of reactive hydrogen groups and the isocyanate terminated urethane prepolymer has a plurality of unreacted NCO groups; and, wherein a stoichiometric ratio of the reactive hydrogen groups to the unreacted NCO groups is 0.85 to 1.15.

3. The chemical mechanical polishing pad of claim 1 , wherein the isocyanate terminated urethane prepolymer has 8.95 to 9.25 unreacted NCO groups.

4. The chemical mechanical polishing pad of claim 1 , wherein the polishing surface has a spiral groove pattern formed therein.

5. The chemical mechanical polishing pad of claim 1 , wherein the MN of the high molecular weight polyol curative is about 11,400.

Assignees

• Rohm & Haas Elect Materials Cmp Holdings Inc
• Dow Global Technologies Llc

Inventors

• Qian Bainian
• Degroot Marty W

Classifications

• H10P95/062

  involving a dielectric removal step · CPC title

• H10P52/402

  of semiconductor materials · CPC title

• B24B37/24 Primary

  characterised by the composition or properties of the pad materials · CPC title

• H01L21/31053

  Electricity · mapped topic

• H01L21/30625

  Electricity · mapped topic