Method related to tuning the performance of superconducting nanowire single photon detector via ion implantation

Patent metadata

Field	Value
Publication number	US-11380834-B2
Application number	US-201816761803-A
Country	US
Kind code	B2
Filing date	Apr 10, 2018
Priority date	Nov 10, 2017
Publication date	Jul 5, 2022
Grant date	Jul 5, 2022

Abstract

The present disclosure provides a method for making a single photon detector with a modified superconducting nanowire. The method includes: preparing a substrate; modifying a superconducting nanowire with stress on a surface of the substrate; and fabricating a superconducting nanowire single photon detector based on the superconducting nanowire with stress. Based on the above technical solution, in the superconducting nanowire single photon detector provided by the present disclosure, the device material layer film has a certain thickness, the critical temperature of the device material can be reduced, the uniformity of the device material and small superconducting transition width are ensured, thereby improving the detection efficiency of the device.

First claim

We claim:

1. A method for making a single photon detector with a modified superconducting nanowire, comprising:
preparing a substrate;
modifying a superconducting nanowire with stress on a surface of the substrate, the stress is introduced into the superconducting nanowire based on ion implantation; and
fabricating a superconducting nanowire single photon detector based on the superconducting nanowire with stress.

2. The method for making a single photon detector with a modified superconducting nanowire according to claim 1 , wherein said fabricating of the superconducting nanowire with stress on the surface of the substrate includes:
preparing a superconducting thin film layer on the surface of the substrate;
implanting ions from a surface of the superconducting thin film layer to introduce stress into the superconducting thin film layer; and
performing photolithography and reactive ion etching on the obtained superconducting thin film layer to form the superconducting nanowire with stress.

3. The method for making a single photon detector with a modified superconducting nanowire according to claim 1 , wherein said preparing of the superconducting nanowire with stress on the surface of the substrate includes:
preparing a superconducting thin film layer on the surface of the substrate;
performing photolithography and reactive ion etching process on the superconducting thin film layer to obtain a superconducting nanowire structure; and
implanting ions on a surface of the superconducting nanowire structure to introduce stress into the superconducting nanowire structure, to obtain the superconducting nanowire with stress.

4. The method for making a single photon detector with a modified superconducting nanowire according to claim 2 , wherein the ions in the ion implantation process are inert gas ions.

5. The method for making a single photon detector with a modified superconducting nanowire according to claim 4 , wherein in the ion implantation process, an implantation dose ranges from 1×1014 to 1×1016 cm-2, an implantation energy ranges from 10 to 100 keV, and an implantation temperature ranges from 0 to 600° C.

6. The method for making a single photon detector with a modified superconducting nanowire according to claim 2 , wherein an ion implantation area in the ion implantation process covers a surface of a stress layer to be introduced and/or ions in the ion implantation process penetrate into the stress layer to be introduced.

7. The method for making a single photon detector with a modified superconducting nanowire according to claim 1 , wherein a material of the superconducting nanowire is NbN, Nb, TaN, TiN, NbTiN or WSi.

8. The method for making a single photon detector with a modified superconducting nanowire according to claim 1 , wherein between said preparing of the substrate and said preparing of the superconducting nanowire with stress on the surface of the substrate, the method further comprises:
preparing an optical reflective film on the surface of the substrate, the optical reflective film is prepared between the substrate and the superconducting nanowire.

9. The method for making a single photon detector with a modified superconducting nanowire according to claim 3 , wherein the ions in the ion implantation process are inert gas ions.

10. The method for making a single photon detector with a modified superconducting nanowire according to claim 3 , wherein an ion implantation area in the ion implantation process covers a surface of a stress layer to be introduced and/or ions in the ion implantation process penetrate into the stress layer to be introduced.

Assignees

• Shanghai Inst Microsystem & Information Tech Cas
• Shanghai Institute Of Microsystems And Information Tech Chinese Academy Of Sciences

Inventors

• Ou Xin
• You Lixing
• Jia Qi
• Zhang Weijun

Classifications

• H10F30/10 Primary

  the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors · CPC title

• G01J11/00

  Measuring the characteristics of individual optical pulses or of optical pulse trains · CPC title

• B82Y30/00

  Nanotechnology for materials or surface science, e.g. nanocomposites · CPC title

• B82Y40/00

  Manufacture or treatment of nanostructures · CPC title

• G01J2001/442

  Single-photon detection or photon counting · CPC title