Method of manufacturing a semiconductor device and a cleaning composition for an adhesive layer

Patent metadata

Field	Value
Publication number	US-11380537-B2
Application number	US-201916265709-A
Country	US
Kind code	B2
Filing date	Feb 1, 2019
Priority date	Dec 14, 2016
Publication date	Jul 5, 2022
Grant date	Jul 5, 2022

Abstract

Embodiments of the inventive concepts provide a method of manufacturing a semiconductor device and a cleaning composition for an adhesive layer. The method includes preparing a semiconductor substrate to which an adhesive layer adheres, removing the adhesive layer from the semiconductor substrate, and applying a cleaning composition to the semiconductor substrate to remove a residue of the adhesive layer. The cleaning composition includes a solvent including a ketone compound and having a content that is equal to or greater than 40 wt % and less thaadminn 90 wt %, quaternary ammonium salt, and primary amine.

First claim

What is claimed is:

1. A cleaning composition, the cleaning composition comprising:
a polar solvent having a content that is equal to or greater than 40 wt % and less than 90 wt %, wherein the polar solvent is a mixture of a ketone compound and an acetate-based compound;
a quaternary ammonium salt selected from tetramethylammonium hydroxide, tetramethylammonium phosphate, dicyclohexylammonium nitride, or any combination thereof;
a primary amine selected from 2-aminoethanol, benzylamine, ethylene diamine, butyldiethanolamine, butylamine, cyclohexylamine, or any combination thereof;
an inorganic acid having a content that ranges from 1 wt % to 15 wt %, the inorganic acid selected from phosphoric acid, acetic acid, silicic acid, hexafluorophosphoric acid, or any combination thereof; and
a hydroxyl-benzene-based compound having a content that ranges from 0.1 wt % to 20 wt %, the hydroxyl-benzene-based compound selected from at least one of 4-hydroxybenzenesulfonic acid, catechol, hydroquinone, pyrogallol, gallic acid, methylgallate, ethylgallate, or n-propylgallate;
wherein a pH of the cleaning composition ranges from 7 to 8; and
wherein a weight ratio of the quaternary ammonium salt to the primary amine ranges from 3:1 to 1:3; and
wherein a sum of a content of the quaternary ammonium salt and a content of the primary amine ranges from 1 wt % to 30 wt %.

2. The cleaning composition of claim 1 , wherein the acetate-based compound comprises alkyl acetate or vinyl acetate.

3. The cleaning composition of claim 1 , further comprising
an amine compound comprising a material different from the quaternary ammonium salt and the primary amine.

4. The cleaning composition of claim 1 , wherein the ketone compound comprises acetone, diacetonealcohol, acetophenone, cyclohexanone, methylethylketone, butyl ethylketone, heptylmethylketone, hexylmethylketone, or any combination thereof.

5. A cleaning composition for an adhesive layer, the cleaning composition comprising:
a polar solvent which is a mixture of a ketone compound and an acetate-based compound, the polar solvent having a content that is equal to or greater than 40 wt % and less than 90 wt %;
a quaternary ammonium salt selected from tetramethylammonium hydroxide, tetramethylammonium phosphate, dicyclohexylammonium nitride, or any combination thereof;
a primary amine selected from 2-aminoethanol, benzylamine, ethylene diamine, butyldiethanolamine, butylamine, cyclohexylamine, or any combination thereof;
a hydroxyl-benzene-based compound, a content of the hydroxyl-benzene-based compound ranging from 0.1 wt % to 20 wt %;
an inorganic acid having a content that ranges from 1 wt % to 15 wt %;
wherein a sum of a content of the quaternary ammonium salt and a content of the primary amine ranges from 1 wt % to 30 wt %;
wherein the inorganic acid is selected from phosphoric acid, acetic acid, silicic acid, hexafluorophosphoric acid, or any combination there, wherein the hydroxyl-benzene-based comprises at least one of 4-hydroxybenzenesulfonic acid, catechol, hydroquinone, pyrogallol, gallic acid, methylgallate, ethylgallate, or n-propylgallate;
wherein a weight ratio of the quaternary ammonium salt to the primary amine ranges from 3:1 to 1:3;
wherein a pH of the cleaning composition ranges from 7 to 8; and
wherein the quaternary ammonium salt and the primary amine are capable of reacting with a polymer adhesive residue to form an imine.

6. The cleaning composition of claim 5 , further comprising an amine compound,
wherein the amine compound comprises a material different from the quaternary ammonium salt and the primary amine.

7. The cleaning composition of claim 5 ,
wherein the acetate-based compound is selected from at least one of ethyl acetate, octyl acetate, amyl acetate, vinyl acetate, isopropyl acetate, or ethylhexyl acetate.

8. The cleaning composition of claim 5 , wherein the ketone compound is capable of swelling the polymer adhesive residue.

Assignees

• Samsung Electronics Co Ltd
• Soulbrain Co Ltd

Inventors

• Kim Hoyoung
• Lee Hyo-Sun
• Kim Soojin
• KIM Keonyoung
• Bae Jinhye
• Han Hoon
• Kwon Tae Soo
• Lim Jung Hun

Classifications

• H10W90/297

  characterised by the through-semiconductor vias [TSVs] in the stacked chips · CPC title

• H10W90/26

  the stacked chips being of the same size without any chips being laterally offset, e.g. chip stacks having a rectangular shape · CPC title

• H10W72/0198

  batch processes · CPC title

• H10W72/944

  Dispositions of multiple bond pads · CPC title

• H10W72/952

  comprising metals or metalloids, e.g. PbSn, Ag or Cu · CPC title