Monolithic metamorphic multi-junction solar cell

Patent metadata

Field	Value
Publication number	US-11374140-B2
Application number	US-202117373254-A
Country	US
Kind code	B2
Filing date	Jul 12, 2021
Priority date	Jul 10, 2020
Publication date	Jun 28, 2022
Grant date	Jun 28, 2022

Abstract

A monolithic metamorphic multi-junction solar cell comprising a first III-V subcell and a second III-V subcell and a third III-V subcell and a fourth Ge subcell, wherein the subcells are stacked on top of each other in the indicated order, and the first subcell forms the topmost subcell, and a metamorphic buffer is formed between the third subcell and the fourth subcell and all subcells each have an n-doped emitter layer and a p-doped base layer, and the emitter layer of the second subcell is greater than the base layer.

First claim

What is claimed is:

1. A monolithic metamorphic multi-junction solar cell comprising:
a first III-V subcell;
a second III-V subcell;
a third III-V subcell;
a fourth Ge subcell, wherein the first, second, third, and fourth subcells being stacked in the indicated order, the first subcell forming topmost subcell, and the first, second, third, and fourth subcells each have an n-doped emitter layer and a p-doped base layer;
a metamorphic buffer formed between the third subcell and the fourth subcell;
a first tunnel diode formed between the first subcell and the second subcell;
a second tunnel diode formed between the second subcell and the third subcell; and
a third tunnel diode formed between the third subcell and the fourth subcell,
wherein a thickness of the emitter layer of each of the first, third and fourth subcells is less than a thickness of the associated base layer of each of the first, third and fourth subcells, respectively,
wherein, in the second subcell, a thickness of the emitter layer is greater than a thickness of the base layer,
wherein the emitter layer of the second subcell comprises or consists of InGaAsP, and
wherein the first subcell comprises a compound of at least the elements AlInP.

2. The monolithic metamorphic multi-junction solar cell according to claim 1 , wherein the thickness of the emitter layer of the second subcell has a thickness greater than 600 nm.

3. The monolithic metamorphic multi-junction solar cell according to claim 1 , wherein the base layer of the second subcell has a thickness less than 450 nm and/or a doping greater than 4·10 17 /cm 3 .

4. The monolithic metamorphic multi-junction solar cell according to claim 1 , wherein the emitter layer of the second subcell has an arsenic content based on the elements of main group V of between 22% and 33% and an indium content based on the elements of the main group III between 52% and 65%, and the lattice constant of the emitter layer is between 0.572 nm and 0.577 nm.

5. The monolithic metamorphic multi-junction solar cell according to claim 1 , wherein the second subcell is designed as a heterocell.

6. The monolithic metamorphic multi-junction solar cell according to claim 1 , wherein the base layer of the second subcell comprises InGaAsP or InGaP or AlInGaP or InAlP or AlInAs, or consists of InGaAsP or InGaP or AlInGaP or InAlP or AlInAs.

7. The monolithic metamorphic multi-junction solar cell according to claim 1 , wherein the first subcell has a bandgap in a range between 1.85 eV and 2.07 eV and the second subcell has a bandgap in a range between 1.41 eV and 1.53 eV and the third subcell has a bandgap in a range between 1.04 eV and 1.18 eV.

8. The monolithic metamorphic multi-junction solar cell according to claim 1 , wherein in the first subcell, indium content based on the elements of the main group III is between 64% and 75% and Al content is between 18% and 32%.

9. The monolithic metamorphic multi-junction solar cell according to claim 1 , wherein a semiconductor mirror is arranged between the third subcell and the fourth subcell.

10. The monolithic metamorphic multi-junction solar cell according to claim 1 , wherein the emitter layer of the second subcell at least partially has a dopant gradient and the dopant concentration in the direction of the first subcell increases to more than 3·10 17 /cm 3 .

11. The monolithic metamorphic multi-junction solar cell according to claim 1 , wherein the emitter layer of the second subcell comprises a first region and a second region, the first region having a different magnitude of doping than the second region and the second region being formed closer to the base than the first region.

12. The monolithic metamorphic multi-junction solar cell according to claim 1 , wherein exactly four subcells or exactly five subcells are provided, or wherein a fifth subcell is formed between the first subcell and the second subcell.

13. The monolithic metamorphic multi-junction solar cell according to claim 1 , wherein the base layer of the second subcell is doped with carbon and/or that the carbon concentration in the base layer of the second solar cell is higher than the zinc concentration.

14. The monolithic metamorphic multi-junction solar cell according to claim 1 , wherein emitter doping of the second subcell is less than base doping by at least a factor of 3.

Assignees

• Azur Space Solar Power Gmbh

Inventors

• Meusel Matthias
• Berg Alexander
• Schroth Philipp
• Schreier Susanne

Classifications

• H10F10/163

  comprising only Group III-V materials, e.g. GaAs/AlGaAs or InP/GaInAs photovoltaic cells · CPC title

• H10F10/146

  Back-junction photovoltaic cells, e.g. having interdigitated base-emitter regions on the back side · CPC title

• H10F10/142

  comprising multiple PN homojunctions, e.g. tandem cells · CPC title

• H10F77/1248

  having three or more elements, e.g. GaAlAs, InGaAs or InGaAsP · CPC title

• H10F77/1243

  characterised by the dopants · CPC title