Multi-junction solar cell

Patent metadata

Field	Value
Publication number	US-10991840-B2
Application number	US-201615375802-A
Country	US
Kind code	B2
Filing date	Dec 12, 2016
Priority date	Dec 10, 2015
Publication date	Apr 27, 2021
Grant date	Apr 27, 2021

Abstract

A stacked multi-junction solar cell having a first subcell and second subcell, the second subcell having a larger band gap than the first subcell. A third subcell has a larger band gap than the second subcell, and each of the subcells include an emitter and a base. The second subcell has a layer which includes a compound formed at least the elements GaInAsP, and a thickness of the layer is greater than 100 nm, and the layer is formed as part of the emitter and/or as part of the base and/or as part of the space-charge zone situated between the emitter and the base. The third subcell has a layer including a compound formed of at least the elements GaInP, and the thickness of the layer is greater than 100 nm.

First claim

What is claimed is:

1. A stacked multi-junction solar cell comprising:
a first subcell having a first layer including germanium, the first subcell forming a substrate for the stacked multi-junction solar cell;
a second subcell having a larger band gap than the first subcell;
a third subcell having a larger band gap than the second subcell, the first, second and third subcells having an emitter and a base;
a fourth subcell having a fourth layer;
a metamorphic buffer formed between the first subcell and the second subcell, the metamorphic buffer having a sequence of at least three layers, and a lattice constant increasing from layer to layer in a sequence in a direction of the second subcell, the metamorphic buffer layer being directly adjacent to the first subcell,
wherein the second subcell comprises a second layer formed of a compound that includes at least the elements GaInAsP, a thickness of the second layer being greater than 100 nm, the second layer being formed as part of the emitter or as part of the base or as part of a space-charge zone situated between the emitter and the base, and a lattice constant of the second layer is less than 5.84 Å,
wherein the third subcell includes a third layer having a compound formed of at least the elements GaInP, a thickness of the third layer being greater than 100 nm, the third layer being formed as part of the emitter or as part of the base or as part of the space-charge zone situated between the emitter and the base, a lattice constant of the third layer of the third subcell differing from the lattice constant of the second layer of the second subcell by less than 0.2%,
wherein, in the second subcell, a phosphorus content of the second layer is greater than 1 atomic % and less than 45 atomic % and an indium content of the second layer of the second subcell is less than 50 atomic %, and
wherein a fifth subcell is disposed between the second subcell and the third subcell, and the fifth subcell includes a fifth layer having a compound formed of at least the compound GaInAs, and the thickness of the fifth layer is greater than 100 nm, and the fifth layer is formed as part of the emitter or as part of the base or as part of the space charge zone situated between the emitter and the base,
wherein the second subcell, the third subcell, the fourth subcell, and the fifth subcell are lattice matched.

2. The multi-junction solar cell according to claim 1 , wherein two directly consecutive subcells include different elements and no semiconductor bond is formed between the two subcells.

3. The multi-junction solar cell according to claim 1 , wherein the fourth subcell is disposed between the second subcell and the third subcell, the fourth layer of the fourth subcell has a compound which includes at least the elements AlGaInAs or GaInAsP, a thickness of the fourth layer is greater than 100 nm, the fourth layer is formed as part of the emitter or as part of the base or as part of the space-charge zone situated between the emitter and the base; or
wherein the fourth subcell is disposed between the first subcell and the second subcell, and the fourth layer of the fourth subcell is formed of a compound which includes at least the elements GaInAs or GaInNAs, and a thickness of the fourth layer is greater than 100 nm, and is formed as part of the emitter or as part of the base or as part of the space-charge zone situated between the emitter and the base.

4. The multi-junction solar cell according to claim 1 , wherein the third layer of the third subcell is formed of a compound which includes at least the elements AlGaInP.

5. The multi-junction solar cell according to claim 1 , wherein a semiconductor mirror is provided, and the semiconductor mirror is disposed between the first subcell and the second subcell or between the first subcell and the fourth subcell.

6. The multi-junction solar cell according to claim 1 , wherein the second layer of the second subcell or the fourth layer of the fourth subcell is formed of a compound having at least the elements AlGaInAsP.

7. The multi-junction solar cell according to claim 1 , wherein the multi-junction solar cell includes exactly five subcells or the second layer of the second subcell has an energy gap in the range of 1.3 eV to 1.4 eV or in the range of 1.43 eV to 1.7 eV.

8. The multi-junction solar cell according to claim 1 , wherein, in the second subcell, a phosphorus content of the second layer is less than 35 atomic %, and an indium content of the second layer is less than 45 atomic %, or the lattice constant of the second layer is less than 5.81 Å.

9. The multi-junction solar cell according to claim 1 , wherein, in the second subcell, a phosphorus content of the second layer is less than 25 atomic %, and an indium content of the second layer is less than 45 atomic % or the lattice constant of the second layer is less than 5.78 Å.

10. The multi-junction solar cell according to claim 1 , wherein, in the second subcell, the thickness of the second layer is greater than 0.4 μm.

11. The multi-junction solar cell according to claim 1 , wherein the second subcell does not include a multi-junction quantum well structure.

12. The multi-junction solar cell according to claim 1 , wherein the lattice constant of the fourth layer of the fourth subcell differs from the lattice constant of the second layer of the second subcell by less than 0.2%.

13. The multi-junction solar cell according to claim 1 , wherein the lattice constant of the fifth layer of the fifth subcell differs from the lattice constant of the second layer of the second subcell by less than 0.2%.

14. The multi-junction solar cell according to claim 1 , wherein, in the second subcell, the thickness of the second layer is greater than 0.8 μm.

15. The multi-junction solar cell according to claim 1 , wherein the metamorphic buffer is formed directly on the first subcell, and wherein the first subcell forming the substrate is an activated substrate of germanium.

16. The multi-junction solar cell according to claim 1 , the third layer of the third subcell is formed as part of the emitter or as part of the space-charge zone situated between the emitter and the base of the third subcell.

Assignees

• Azur Space Solar Power Gmbh

Inventors

• Ebel Lars
• Guter Wolfgang
• Meusel Matthias

Classifications

• H10F77/1248 Primary

  having three or more elements, e.g. GaAlAs, InGaAs or InGaAsP · CPC title

• H10F10/163

  comprising only Group III-V materials, e.g. GaAs/AlGaAs or InP/GaInAs photovoltaic cells · CPC title

• H10F10/142 Primary

  comprising multiple PN homojunctions, e.g. tandem cells · CPC title

• H10F77/492

  Spectrum-splitting means, e.g. dichroic mirrors · CPC title

• H10F77/80

  Arrangements for preventing damage to photovoltaic cells caused by corpuscular radiation, e.g. for space applications · CPC title