Diagnostic device, semiconductor manufacturing equipment system, semiconductor equipment manufacturing system, and diagnostic method
US-2024321608-A1 · Sep 26, 2024 · US
US11373847B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11373847-B2 |
| Application number | US-201916664925-A |
| Country | US |
| Kind code | B2 |
| Filing date | Oct 27, 2019 |
| Priority date | Dec 29, 2016 |
| Publication date | Jun 28, 2022 |
| Grant date | Jun 28, 2022 |
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A plasma treatment method is provided. The method includes generating a planar plasma in a plasma treatment chamber, observing an effective influence region of the planar plasma by using an optical observation system in which an observation lens has a transparent substrate and a fluorescent coating thereon, adjusting a location of the observation lens to observe a brightness change of the fluorescent coating and the transparent substrate to obtain a location and a thickness range of the effective influence region of the planar plasma, and then adjusting a location of the observation lens to observe a brightness change of the fluorescent coating and the transparent substrate to obtain a location and a thickness range of the effective influence region of the planar plasma. A location of a sample is adjusted to within the effective influence region, and a plasma treatment is then performed on the sample.
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What is claimed is: 1. A plasma treatment method, comprising: generating a planar plasma in a plasma treatment chamber; observing an effective influence region of the planar plasma by using an optical observation system, wherein the optical observation system comprises an observation lens, and the observation lens comprises a transparent substrate, a fluorescent coating located on a surface of the transparent substrate, and a shelter coating between the transparent substrate and the fluorescent coating; adjusting a location of the observation lens to observe a brightness change of the fluorescent coating and the transparent substrate for obtaining a location and a thickness range of the effective influence region of the planar plasma; adjusting a location of a sample to within the effective influence region; and performing a plasma treatment on the sample. 2. The plasma treatment method of claim 1 , further comprising, before adjusting the location of the sample, adjusting a thickness and the location of the effective influence region of the planar plasma. 3. The plasma treatment method of claim 1 , wherein the step of observing the brightness change of the fluorescent coating and the transparent substrate comprises a visual observation or using a digital camera. 4. The plasma treatment method of claim 3 , further comprising using an external analysis equipment to confirm and check an accuracy of the digital camera. 5. The plasma treatment method of claim 1 , wherein the sample has a 3D surface, and the effective influence region of the planar plasma is changed by adjusting a pressure to process different regions on the 3D surface. 6. The plasma treatment method of claim 1 , further comprising, after generating the planar plasma, enlarging or shrinking the effective influence region of the planar plasma by adjusting a pressure. 7. The plasma treatment method of claim 6 , wherein the pressure is between 0.1 torr and 500 torr. 8. The plasma treatment method of claim 1 , wherein a gas flowing while generating the planar plasma comprises a reactive gas or an inert gas. 9. The plasma treatment method of claim 8 , wherein the inert gas comprises helium, neon, argon, nitrogen, or a combination thereof, and the reactive gas comprises oxygen, ammonia, hydrogen, or a combination thereof. 10. The plasma treatment method of claim 8 , wherein a flow of the gas is between 0.5 sccm and 200 sccm. 11. The plasma treatment method of claim 1 , wherein the thickness range of the effective influence region of the planar plasma is between 0.1 mm and 20.0 mm. 12. The plasma treatment method of claim 1 , wherein an electric field for generating the planar plasma is between 2 kV/cm and 30 kV/cm. 13. The plasma treatment method of claim 1 , further comprising, before performing the plasma treatment, adjusting an electric field of the planar plasma to change a hydrophilicity and a hydrophobicity of a surface of the sample. 14. The plasma treatment method of claim 1 , further comprising disposing a pattern mask on a surface of the sample to perform the plasma treatment on a predetermined site of the sample.
Coating on selected surface areas, e.g. using masks · CPC title
Gas control, e.g. control of the gas flow · CPC title
Means for moving the material to be treated · CPC title
by other methods than those of C23C18/22 - C23C18/30 · CPC title
Feedback systems · CPC title
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