Method for preparing ER- or ER/O-doped silicon-based luminescent material emitting communication band at room temperature, the luminescent material and ER- or ER/O-SI lasers

Patent metadata

Field	Value
Publication number	US-11367998-B2
Application number	US-201716762801-A
Country	US
Kind code	B2
Filing date	Dec 15, 2017
Priority date	Dec 15, 2017
Publication date	Jun 21, 2022
Grant date	Jun 21, 2022

Abstract

A method for preparing an erbium (Er)- or erbium oxygen (Er/O)-doped silicon-based luminescent material emitting a communication band at room temperature. The method comprising the following steps: (a) doping a single crystalline silicon wafer with erbium ion implantation or co-doping the single crystalline silicon wafer with erbium ion and oxygen ion implantation simultaneously to obtain an Er- or Er/O-doped silicon wafer, wherein the single crystalline silicon wafer is a silicon wafer with a germanium epitaxial layer, or an SOI silicon wafer with silicon on an insulating layer or other silicon-based wafers; and (b) subjecting the Er- or Er/O-doped silicon wafer to a deep-cooling annealing treatment, the deep-cooling annealing treatment includes a temperature increasing process and a rapid cooling process.

First claim

What is claimed is:

1. A method for preparing an erbium (Er)- or erbium oxygen (Er/O)-doped silicon-based luminescent material emitting a communication band at room temperature, comprising the following steps:
(a) doping a single crystalline silicon wafer with erbium ion implantation or co-doping the single crystalline silicon wafer with erbium ion and oxygen ion implantation simultaneously to obtain an Er- or Er/O-doped silicon wafer, wherein the single crystalline silicon wafer is a silicon wafer with a germanium epitaxial layer, or an SOI silicon wafer with silicon on an insulating layer or other silicon-based wafer; and
(b) subjecting the Er- or Er/O-doped silicon wafer to a deep-cooling annealing treatment,
wherein the deep-cooling annealing treatment includes a temperature increasing process and an ultra-rapid cooling process that includes a cooling rate of greater than −200° C. s −1 .

2. The method according to claim 1 , wherein the erbium ion implantation is performed with an energy range of from 20 keV to 1 MeV, and a dosage range of from 4×10 14 to 4×10 16 cm −2 ; and wherein the oxygen ion implantation is performed with an energy range of from 3 keV to 300 keV, and a dosage range of from 1015 to 1017 cm −2 when co-doping with erbium ion and oxygen ion implantation.

3. The method according to claim 1 , wherein the step (b) further comprises:
(b1) performing a high temperature treatment on the Er- or Er/O-doped silicon wafer, and
(b2) performing the ultra-rapid cooling treatment immediately after the high temperature treatment.

4. The method according to claim 3 , wherein the Er- or Er/O-doped silicon wafer is electromagnetically heated by an energized copper ring in (b1); and wherein the ultra-rapid cooling treatment is performed by flushing with a low-temperature high purity He gas in (b2).

5. The method according to claim 3 , wherein a laser pulse ON phase is adopted for increasing a temperature in step (b1); and wherein a laser pulse OFF phase is adopted for the ultra-rapid cooling treatment in step (b2).

6. The method according to claim 3 , wherein a maximum temperature in (b1) reaches 1300° C.

7. The method according to claim 1 , further comprising a step of depositing a dielectric protective layer on a surface of the Er- or Er/O-doped silicon wafer prior to the step (b), and a step of removing the dielectric protective layer after step (b).

8. The method according to claim 1 , wherein the temperature increasing process includes a temperature of 950° C. for 5 minutes.

9. An erbium (Er)- or erbium oxygen (Er/O)-doped silicon-based luminescent material emitting a communication band at room temperature, prepared by the method according to claim 1 .

10. An Er- or Er/O-Si laser, comprising a PIN diode, a micro-disk resonator, and a silicon-based optical waveguide, wherein an I region of the PIN diode is made of the erbium (Er)- or erbium oxygen (Er/O)-doped silicon-based luminescent material emitting a communication band at room temperature according to claim 9 .

11. The Er— or Er/O—Si laser according to claim 10 , wherein the PIN diode is forward-biased to form an electroluminescent device, the micro-disk resonator selects and enhances light waves at the communication band, a luminescence of the electroluminescent device is selected and enhanced by the micro-disk resonator, and a laser is formed and derived from the silicon-based optical waveguide.

Assignees

• Univ Shanghai Jiaotong

Inventors

• Dan Yaping
• Wen Huimin
• He Jiajing

Classifications

• H01S5/3224

  Si · CPC title

• C23C14/5806

  Thermal treatment · CPC title

• H01S2304/00

  Special growth methods for semiconductor lasers · CPC title

• C23C14/48

  Ion implantation · CPC title

• H01S3/0632

  Thin film lasers in which light propagates in the plane of the thin film · CPC title