Radiation-emitting optoelectronic device

Patent metadata

Field	Value
Publication number	US-10411170-B2
Application number	US-201615570699-A
Country	US
Kind code	B2
Filing date	Apr 29, 2016
Priority date	Apr 30, 2015
Publication date	Sep 10, 2019
Grant date	Sep 10, 2019

Abstract

A radiation-emitting optoelectronic device, a method for using a radiation-emitting optoelectronic device and a method for making a radiation-emitting optoelectronic device are disclosed. In an embodiment, the device includes a semiconductor chip configured to emit a primary radiation and a conversion element including a conversion material which comprises Cr and/or Ni ions and a host material and which, during operation of the device, converts the primary radiation emitted by the semiconductor chip into a secondary radiation of a wavelength between 700 nm and 2000 nm, wherein the host material comprises EAGa12O19, AyGa5O(15+y)/2, AE3Ga2O14, Ln3Ga5GeO14, Ga2O3, Ln3Ga5.5D0.5O14 or Mg4D2O9, wherein EA=Mg, Ca, Sr and/or Ba, A=Li, Na, K and/or Rb, AE=Mg, Ca, Sr and/or Ba, Ln=La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and/or Lu and D=Nb and/or Ta, and wherein y=0.9-1.9.

First claim

The invention claimed is:

1. A radiation-emitting optoelectronic device, the device comprising:
a semiconductor chip configured to emit a primary radiation during operation of the device; and
a conversion element configured to convert the primary radiation emitted by the semiconductor chip into a secondary radiation of a wavelength between 700 nm and 2000 nm, the conversion element comprising a conversion material which comprises Cr and/or Ni ions and a host material, wherein the host material comprises Ln 3 Ga 5 GeO 14 and Ga 2 O 3 , and wherein Ln=La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and/or Lu.

2. The radiation-emitting optoelectronic device according to claim 1 , wherein the conversion material comprises Cr 3+ and/or Ni 2+ ions.

3. The radiation-emitting optoelectronic device according to claim 1 , wherein the Cr and/or Ni ions partially replace metals of the host material.

4. The radiation-emitting optoelectronic device according to claim 3 , wherein the Cr and/or Ni ions replace 0.01 to 10 mol % of a metal of the host material.

5. A method for using the radiation-emitting optoelectronic device according to claim 1 , the method comprising:
placing the device in a spectrometer.

6. A method for using the radiation-emitting optoelectronic device according to claim 1 , the method comprising:
placing the device in an endoscope.

7. The radiation-emitting optoelectronic device according to claim 1 , wherein during operation of the device, the conversion material converts the primary radiation emitted by the semiconductor chip into a secondary radiation of a wavelength between 700 nm and 1100 nm.

8. The radiation-emitting optoelectronic device according to claim 1 , wherein the conversion element is part of a casting compound of the semiconductor chip or the conversion element forms the casting compound.

9. The radiation-emitting optoelectronic device according to claim 8 , wherein the conversion element is a layer and is disposed directly onto the semiconductor chip.

10. The radiation-emitting optoelectronic device according to claim 1 , wherein the conversion element is a plate or film which is disposed over the semiconductor chip.

11. The radiation-emitting optoelectronic device according to claim 1 , wherein the conversion element comprises a silicone as a matrix material.

12. The radiation-emitting optoelectronic device according to claim 1 , wherein the conversion material comprises Ln3(Ga1−xNix)5GeO(28−5x)/2 and (Ga1−xNix)2O3−x, and wherein x=0.0001-0.1 and Ln=La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and/or Lu.

13. The radiation-emitting optoelectronic device according to claim 1 , wherein the conversion material comprises Ln3(Ga1−x′Crx′)5GeO14 and (Ga1−x′Crx′)2O3, and wherein x′=0.0001-0.1 and Ln=La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and/or Lu.

14. A method for producing a radiation-emitting optoelectronic device, the method comprising:
providing a semiconductor chip, wherein the semiconductor chip is configured to emit a primary radiation during operation of the device;
producing a conversion element, the conversion element comprising a conversion material which comprises Cr and/or Ni ions and a host material, wherein the host material comprises Ln3Ga5GeO14 and Ga2O3,
wherein Ln=La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and/or Lu, and
applying the conversion element over the semiconductor chip, wherein the conversion element is configured to convert, during operation of the device, the primary radiation emitted by the semiconductor chip into secondary radiation of a wavelength between 700 nm and 2000 nm.

15. The method according to claim 14 , wherein producing the conversion element comprises mixing starting materials and calcining the mixed starting material at a temperature between 700° C. and 1500° C. to form the conversion material.

16. The method according to claim 15 , wherein the starting materials are selected from metal oxides, metal hydroxides, metal carbonates, metal nitrates, metal halides, metal acetates, metal nitrides or combinations thereof.

Assignees

• Osram Opto Semiconductors Gmbh

Inventors

• Tragl Sonja
• Eisert Dominik
• Lange Stefan
• Kaufmann Nils
• Martin Alexander
• Bergenek Krister

Classifications

• H10W90/756

  between a chip and a stacked lead frame, conducting package substrate or heat sink · CPC title

• H10W74/00

  Encapsulations, e.g. protective coatings · CPC title

• H10W72/5363

  the connected ends being wedge-shaped · CPC title

• H10W72/01515

  Forming coatings · CPC title

• H10W72/884

  Die-attach connectors and bond wires · CPC title