Allyloxy derivative, resist underlayer forming composition using the same, and method of manufacturing resist underlayer and semiconductor device using the same

Patent metadata

Field	Value
Publication number	US-11366389-B2
Application number	US-201816760908-A
Country	US
Kind code	B2
Filing date	Oct 30, 2018
Priority date	Nov 1, 2017
Publication date	Jun 21, 2022
Grant date	Jun 21, 2022

Abstract

The present invention provides a resist underlayer forming composition, which is well in heat resistance and gap filling. Further, the present invention provides methods of manufacturing a resist underlayer and semiconductor device using it. [Means for Solution] A composition comprising a allyloxy derivative having a specific group and a solvent, and methods of manufacturing a resist underlayer and semiconductor device using it.

First claim

The invention claimed is:

1. A resist underlayer forming composition comprising:
an allyloxy derivative comprising a group X represented by the following formula (1):

wherein,
R 1a and R 1a′ are each independently hydrogen, or linear or branched C 1-4 alkyl,
R 1b , R 1c , and R 1d , are each independently hydrogen, or linear or branched C 1-4 alkyl, and
n1 is 1, 2, or 3; and
a solvent and
the number of atoms contained in one or more solid components of said resist underlayer forming composition satisfies the following formula:
1.5≤{total number of atoms/(number of C−number of O)}≤3.5,

where,
the number of C is the number of carbon atoms in the total number of atoms, and
the number of O is the number of oxygen atoms in the total number of atoms.

2. The composition according to claim 1 , wherein said allyloxy derivative has three or more group X.

3. The composition according to claim 1 , wherein said solvent is water, a hydrocarbon solvent, an ether solvent, an ester solvent, an alcohol solvent, a ketone solvent, or any mixture of any of these.

4. The composition according to claim 1 , further comprising a surfactant, a cross-linking agent, an acid generator, a radical generator, a photopolymerization initiator, an agent for enhancing the adhesion to substrates, or any mixture of any of these.

5. The composition according to claim 1 , wherein said resist underlayer forming composition comprises a cross-linking agent in a concentration of 0-300,000 ppm, a photopolymerization initiator in a concentration of 0-100,000 ppm, an acid generator in a concentration of 0-50,000 ppm, and/or a radical generator in a concentration of 0-50,000 ppm.

6. An allyloxy derivative comprising three or more group X represented by the following formula (1):

wherein,
R 1a and R 1a′ are each independently hydrogen, or linear or branched C 1-4 alkyl,
R 1b , R 1c , and R 1d are each independently hydrogen, or linear or branched C 1-4 alkyl, and

n1 is 1, 2, or 3 and
a structural unit represented by the following formula (4):

wherein,
Ar 4a and Ar 4b are each independently a C 6-10 aromatic hydrocarbon ring and each Ar 4a can be identical to or different from each other,
n4 is 0, 1, or 2,
Y is each independently a single bond or C 1-9 alkylene, and at least one Y contained in the formula is a substituted methylene group which bonds to the other portion of the allyloxy derivative, and
with the proviso that Ar 4a and Ar 4b are not bonded with each other by two single bonds.

7. The composition according to claim 1 , wherein the allyloxy derivative further comprises a structural unit of formula (5):

wherein,
p 5 and p 5′ are each independently a C 6-10 aromatic hydrocarbon ring and each of said p 5 and p 5′ contains two adjacent carbon atoms in cs as constitution atoms,
R 5 is each independently C 1-6 alkyl, halogen, or cyano,
n5 is each independently 0, 1, 2, 3, or 4,
L 5 is each independently a single bond or C 1-9 alkylene, and
L 5′ is each independently a single bond, C 1-9 alkylene, or hydrogen.

8. The composition according to claim 1 , wherein the allyloxy derivative further comprises a structural unit represented by the following formula (2):

wherein,
Ar 2a is a C 6-40 aromatic hydrocarbon group,
n2 is 1, 2, 3, or 4, and
X is as defined in claim 6 and when n2 is 2, 3, or 4, X can be identical to or different from each other and
a structural unit represented by the following formula (4):

wherein,
Ar 4a and Ar 4b are each independently a C 6-10 aromatic hydrocarbon ring and each Ar 4a can be identical to or different from each other,
n4 is 0, 1, or 2,
Y is each independently a single bond or C 1-9 alkylene, and at least one Y contained in the formula is a substituted methylene group which bonds to the other portion of the allyloxy derivative, and

with the proviso that Ar 4a and Ar 4b are not bonded with each other by two single bonds, wherein the ratio of the structural unit represented by the formula (2) is 30-95 mol % and the ratio of the structural unit represented by the formula (4) is 10-70 mol %, based on the all structural units of the allyloxy derivative.

9. A resist underlayer forming composition comprising:
an allyloxy derivative comprising a group X represented by the following formula (1):

wherein,
R 1a and R 1a′ are each independently hydrogen, or linear or branched C 1-4 alkyl,
R 1b , R 1c , and R 1d , are each independently hydrogen, or linear or branched C 1-4 alkyl, and
n1 is 1, 2, or 3; and
a solvent and
wherein the content of said allyloxy derivative is 2-60 mass % based on the total mass of said resist underlayer forming composition.

10. A method of manufacturing a resist underlayer comprising:
applying the composition according to claim 1 above a substrate to form a resist underlayer forming composition layer; and
curing said resist underlayer forming composition layer.

11. The method according to claim 10 , wherein the curing of said resist underlayer forming composition is performed by irradiating with ultraviolet radiations having a wavelength of 10-380 nm.

12. The method according to claim 10 , wherein the curing of said resist underlayer forming composition is performed by heating at 200-450° C.

13. A method of manufacturing a semiconductor device comprising:
manufacturing the resist underlayer according to claim 10 ;
applying a resist composition above said resist underlayer to form a resist composition layer;
exposing said resist composition layer;
developing said resist composition layer after the exposure to form a resist pattern;
etching with said resist pattern as a mask; and
processing the substrate.

14. The method according to claim 13 , further comprising forming wiring in the processed substrate.

15. The composition according to claim 1 , wherein the allyloxy derivative further comprises a structural unit represented by the formula (3)

wherein,
p 3a and p 3a′ are each independently a C 6-10 aromatic hydrocarbon ring,
p 3b and p 3b′ are each independently a C 6-10 aromatic hydrocarbon ring and each of said p 3b and
p 3b′ contains two adjacent carbon atoms in C 3 as constitution atoms,
R 3 is each independently C 1-6 alkyl, halogen, or cyano,
n3 is each independently 0, 1, 2, 3, or 4, and
X is as defined in claim 6 and can be identical to or different from each other.

Assignees

• Merck Patent Gmbh

Inventors

• Nakasugi Shigemasa
• Yanagita Hiroshi
• Sekito Takashi
• Hama Yusuke
• Matsuura Yuriko

Classifications

• H10P76/2041

  Photolithographic processes · CPC title

• H10P50/283

  by chemical means · CPC title

• H10P50/73

  using masks for insulating materials · CPC title

• H10W20/081

  by forming openings in the dielectric parts · CPC title

• H10W20/056

  by filling conductive material into holes, grooves or trenches · CPC title