Silylamine compound, composition for depositing silicon-containing thin film containing the same, and method for manufacturing silicon-containing thin film using the composition

Patent metadata

Field	Value
Publication number	US-11358974-B2
Application number	US-201816499196-A
Country	US
Kind code	B2
Filing date	Mar 28, 2018
Priority date	Mar 29, 2017
Publication date	Jun 14, 2022
Grant date	Jun 14, 2022

Abstract

Provided are a silylamine compound, a composition for depositing a silicon-containing thin film containing the same, and a method for manufacturing a silicon-containing thin film using the composition, and more particularly, to a silylamine compound capable of being usefully used as a precursor of a silicon-containing thin film, a composition for depositing a silicon-containing thin film containing the same, and a method for manufacturing a silicon-containing thin film using the composition.

First claim

The invention claimed is:

1. A silylamine compound represented by the following Chemical Formula 1:

in Chemical Formula 1,
R 1 to R 4 are each independently C1-C7alkyl or C2-C7alkenyl, or R 1 and R 2 , and R 3 and R 4 are each independently linked to each other to form a ring.

2. The silylamine compound of claim 1 , wherein in Chemical Formula 1, R 1 to R 4 are each independently C1-C5alkyl or C2-C5alkenyl.

3. The silylamine compound of claim 1 , wherein the silylamine compound represented by Chemical Formula 1 is represented by the following Chemical Formula 2 or 3:

in Chemical Formulas 2 and 3,
R 11 to R 14 are each independently C1-C5alkyl or C2-C5alkenyl; and
n and m are each independently an integer of 1 to 7.

4. The silylamine compound of claim 3 , wherein in Chemical Formula 2, R 11 to R 14 are each independently C1-C3alkyl or C2-C3alkenyl; and
wherein in Chemical Formula 3, n and m are each independently an integer of 1 to 4.

5. The silylamine compound of claim 1 , wherein the silylamine compound represented by Chemical Formula 1 is selected from the following compounds:

6. A composition for depositing a silicon-containing thin film, the composition comprising the silylamine compound of claim 1 .

7. A method for manufacturing a silicon-containing thin film comprising depositing the composition of claim 6 onto a substrate.

8. The method of claim 7 , wherein deposition is performed by an atomic layer deposition method, a chemical vapor deposition method, a metal-organic chemical vapor deposition method, a low-pressure chemical vapor deposition method, a plasma-enhanced chemical vapor deposition method, or a plasma-enhanced atomic layer deposition method.

9. The method of claim 7 , wherein the silicon-containing thin film is a silicon oxide film, a silicon oxy carbide film, a silicon nitride film, a silicon oxy nitride film, a silicon carbonitride film, or a silicon carbide film.

10. The method of claim 7 , comprising:
a) maintaining a temperature of a substrate mounted in the chamber at 30 to 500□;
b) contacting the composition of claim 6 with the substrate to adsorb the composition in the substrate; and
c) injecting a reaction gas into the substrate in which the composition is adsorbed to form a silicon-containing thin film.

11. The method of claim 7 , wherein the reaction gas is supplied after being activated by generating plasma with a plasma power of 50 to 1000 W.

Assignees

• Dnf Co Ltd

Inventors

• Kim Sung Gi
• Park Jeong Joo
• Park Joong Jin
• Jang Se Jin
• Yang Byeong-Il
• Lee Sang-Do
• Lee Sam Dong
• Lee Sang Ick
• Kim Myong Woon

Classifications

• H10P14/69433

  the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz · CPC title

• H10P14/69215

  the material being a silicon oxide, e.g. SiO2 · CPC title

• H10P14/6927

  the material being a silicon oxynitride, e.g. SiON or SiON:H · CPC title

• H10P14/6922

  the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC · CPC title

• H10P14/6905

  being a silicon carbide or silicon carbonitride and not containing oxygen, e.g. SiC or SiC:H · CPC title