Dielectric material, method of manufacturing thereof, and dielectric devices and electronic devices including the same

Patent metadata

Field	Value
Publication number	US-11358904-B2
Application number	US-201815908193-A
Country	US
Kind code	B2
Filing date	Feb 28, 2018
Priority date	Mar 10, 2017
Publication date	Jun 14, 2022
Grant date	Jun 14, 2022

Abstract

A dielectric material, a method of manufacturing thereof, and a dielectric device and an electronic device including the same. A dielectric material includes a layered metal oxide including a first layer having a positive charge and a second layer having a negative charge which are laminated, a monolayer nanosheet exfoliated from the layered metal oxide, a nanosheet laminate of the monolayer nanosheets, or a combination thereof, wherein the dielectric material includes a two-dimensional layered material having a two-dimensional crystal structure and the two-dimensional layered material is represented by Chemical Formula 1.

First claim

What is claimed is:

1. A dielectric material, comprising
a layered metal oxide comprising a first layer having a positive charge and a second layer having a negative charge which are laminated, a monolayer nanosheet exfoliated from the layered metal oxide, a nanosheet laminate of the monolayer nanosheets, or a combination thereof,
wherein the dielectric material comprises a two-dimensional layered material having a two-dimensional crystal structure, and
the two-dimensional layered material is represented by Chemical Formula 1
Chemical Formula 1
X m [A (n−2) B′ n O (3n+1) ] wherein in Chemical Formula 1, X comprises H, Bi 2 O 2 , a cationic compound, or a combination thereof,

A comprises Bi, Ba, Ca, Pb, Sr, or a combination thereof,
B′ comprises W, Mo, Cr, Ta, Nb, Ti, or a combination thereof, and
1≤m≤2, and n≥2.

2. The dielectric material of claim 1 , wherein the monolayer nanosheet comprises a second layer exfoliated from the layered metal oxide.

3. The dielectric material of claim 2 , wherein the monolayer nanosheet comprises the cationic compound attached to a surface of the second layer.

4. The dielectric material of claim 1 , wherein the two-dimensional layered material has an average longitudinal diameter of about 0.1 micrometers to about 100 micrometers.

5. The dielectric material of claim 1 , wherein the two-dimensional layered material has an average thickness of less than or equal to about 100 nanometers.

6. The dielectric material of claim 1 , wherein X comprises the cationic compound, and the cationic compound comprises a (C1 to C16 alkyl)ammonium compound, a (C1 to C16 alkyl)amine compound, or a combination thereof.

7. The dielectric material of claim 6 , wherein the cationic compound comprises a tetramethylammonium compound, a tetraethylammonium compound, a tetrapropylammonium compound, a tetrabutylammonium compound, a methylamine compound, an ethylamine compound, a propylamine compound, a butylamine compound, an amine polymer, or a combination thereof.

8. The dielectric material of claim 1 , wherein the dielectric material has a dielectric constant of greater than or equal to about 70 at a relative density of about 50% to about 90%.

9. A method of manufacturing the dielectric material of claim 1 , comprising
preparing a layered metal oxide comprising a first layer having a positive charge and a second layer having a negative charge which are laminated,
acid-treating the layered metal oxide to exchange the first layer with protons,
colloidizing the acid-treated layered metal oxide to replace the protons by a cationic compound, and
exfoliating the monolayer nanosheet comprising the second layer from the colloidized layered metal oxide.

10. The method of claim 9 , wherein the cationic compound comprises a tetramethylammonium compound, a tetraethylammonium compound, a tetrapropylammonium compound, a tetrabutylammonium compound, a methylamine compound, an ethylamine compound, a propylamine compound, a butylamine compound, an amine polymer, or a combination thereof.

11. The method of claim 9 , wherein the monolayer nanosheet comprises the cationic compound attached to a surface of the second layer.

12. A dielectric device comprising
a plurality of crystal grains comprising a semi-conductive or conductive material, and
a grain boundary insulation layer between the crystal grains,
wherein the grain boundary insulation layer covers at least one portion of a surface of at least one of the crystal grains and a dielectric material comprising a two-dimensional layered material represented by Chemical Formula 1 and having a two-dimensional crystal structure:
Chemical Formula 1
X m [A (n−2) B′ n O (3n+1) ] wherein, in Chemical Formula 1, X comprises H, Bi 2 O 2 , a cationic compound, or a combination thereof,

A comprises Bi, Ba, Ca, Pb, Sr, or a combination thereof,
B′ comprises W, Mo, Cr, Ta, Nb, Ti, or a combination thereof,
1≤m≤2, and n≥2.

13. The dielectric device of claim 12 , wherein the two-dimensional layered material comprises
a layered metal oxide comprising a first layer having a positive charge and a second layer having a negative charge which are laminated, a monolayer nanosheet exfoliated from the layered metal oxide, a nanosheet laminate of the monolayer nanosheets, or a combination thereof.

14. The dielectric device of claim 12 , wherein the two-dimensional layered material covers an entire surface of at least one of the crystal grains.

15. The dielectric device of claim 12 , wherein the cationic compound comprises a (C1 to C16 alkyl)ammonium compound, a (C1 to C16 alkyl)amine compound, or a combination thereof.

16. The dielectric device of claim 12 , wherein the two-dimensional layered material is present in an amount of about 10 volume % to about 100 volume %,
based on 100 volume % of the grain boundary insulation layer.

17. The dielectric device of claim 12 , wherein the crystal grains comprise barium titanate, strontium titanate, lead titanate, lead zirconate, lead zirconate titanate, or a combination thereof.

18. The dielectric device of claim 12 , wherein the crystal grains have an average particle diameter of about 50 nanometers to about 1.5 micrometers.

19. An electronic device comprising the dielectric device of claim 12 .

20. The electronic device of claim 19 , wherein the electronic device is a varistor, a thermistor, or an energy storage capacitor.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Roh Jong Wook
• Yang Daejin
• Jung Doh Won
• Kwak Chan
• Kim Hyungjun

Classifications

• C01G41/006

  Compounds containing tungsten, with or without oxygen or hydrogen, and containing two or more other elements · CPC title

• H01B5/16 Primary

  comprising conductive material in insulating or poorly conductive material, e.g. conductive rubber (H01B1/14, H01B1/20 take precedence; insulating bodies with conductive admixtures H01B17/64; conductive paints C09D5/24) · CPC title

• C01P2004/03

  obtained by SEM · CPC title

• C04B2235/5436

  micrometer sized, i.e. from 1 to 100 micron · CPC title

• H01C7/10

  voltage responsive, i.e. varistors · CPC title