Semiconductor device having multiple conductive parts

Patent metadata

Field	Value
Publication number	US-11355602-B2
Application number	US-202017015474-A
Country	US
Kind code	B2
Filing date	Sep 9, 2020
Priority date	Feb 18, 2020
Publication date	Jun 7, 2022
Grant date	Jun 7, 2022

Abstract

According to one embodiment, a semiconductor device includes first, second and third conductive parts, a first semiconductor region, and a first insulating part. A direction from the first conductive part toward the second conductive part is along a first direction. The first semiconductor region includes first, second, and third partial regions. A second direction from the first partial region toward the second partial region crosses the first direction. The third partial region is between the first partial region and the second conductive part in the first direction. The third partial region includes an opposing surface facing the second conductive part. A direction from the opposing surface toward the third conductive part is along the second direction. The first insulating part includes a first insulating region. At least a portion of the first insulating region is between the opposing surface and the third conductive part.

First claim

What is claimed is:

1. A semiconductor device, comprising:
a first conductive part;
a second conductive part, a direction from the first conductive part toward the second conductive part being along a first direction;
a first semiconductor region of a first conductivity type, the first semiconductor region including a first partial region, a second partial region, and a third partial region, a second direction from the first partial region toward the second partial region crossing the first direction, the third partial region being between the first partial region and the second conductive part in the first direction, the third partial region including an opposing surface facing the second conductive part, the third partial region and the second conductive part having a Schottky contact;
a third conductive part, a direction from the opposing surface toward the third conductive part being along the second direction; and
a first insulating part including a first insulating region, at least a portion of the first insulating region being between the opposing surface and the third conductive part, the first insulating region directly contacting the opposing surface.

2. The device according to claim 1 , wherein
the first insulating region electrically insulates the second conductive part and the third conductive part and electrically insulates the third partial region and the third conductive part.

3. The device according to claim 1 , wherein
a direction from a portion of the third partial region toward the third conductive part is along the second direction, and
a direction from at least a portion of the second conductive part toward the third conductive part is along the second direction.

4. The device according to claim 1 , wherein
the third partial region includes a first region and a second region,
the first region is between the second region and the second conductive part in the first direction, and
a concentration of an impurity of the first conductivity type in the first region is greater than a concentration of an impurity of the first conductivity type in the second region.

5. The device according to claim 4 , wherein
a thickness along the first direction of the first region is not less than 1 nm and not more than 20 nm.

6. The device according to claim 1 , wherein
the second conductive part includes a first conductive region and a second conductive region,
the first conductive region is between the first partial region and the second conductive region in the first direction,
the second conductive region includes a first element,
the third partial region includes a second element, and
the first conductive region includes a compound including the first element and the second element.

7. The device according to claim 1 , wherein
the second conductive part includes a first conductive region and a second conductive region,
the first conductive region is between the third partial region and the second conductive region in the first direction,
the second conductive region includes a first metallic element,
the third partial region includes silicon, and
the first conductive region includes a silicide including the first metallic element.

8. The device according to claim 7 , wherein
a concentration of an impurity of the first conductivity type in at least a portion of the second conductive region is greater than a concentration of the impurity in at least a portion of the first conductive region.

9. The device according to claim 1 , further comprising:
a fourth conductive part,
the first semiconductor region further including a fourth partial region,
the second partial region being between the first partial region and the fourth partial region in the second direction,
a direction from the fourth partial region toward the fourth conductive part being along the first direction,
a direction from at least a portion of the third partial region toward the fourth conductive part being along the second direction,
the first insulating part including a second insulating region,
the second insulating region being between the fourth conductive part and the at least a portion of the third partial region in the second direction.

10. The device according to claim 9 , wherein
the fourth conductive part is electrically connected to the second conductive part.

11. The device according to claim 9 , further comprising:
a fifth conductive part,
the second conductive part being between the third partial region and at least a portion of the fifth conductive part in the first direction,
the fifth conductive part being electrically connected to the second and fourth conductive parts.

12. The device according to claim 11 , further comprising:
a second insulating part,
the third conductive part being between the second partial region and the fifth conductive part in the first direction,
at least a portion of the second insulating part being between the third conductive part and at least a portion of the fifth conductive part in the first direction.

13. The device according to claim 9 , comprising:
a plurality of the second conductive parts; and
a plurality of the fourth conductive parts,
a position in the second direction of one of the second conductive parts and a position in the second direction of an other one of the second conductive parts being between a position in the second direction of one of the fourth conductive parts and a position in the second direction of an other one of the fourth conductive parts, the other one of the fourth conductive parts being next to the one of the fourth conductive parts.

14. The device according to claim 9 , wherein
an impurity concentration of the first conductivity type in the fourth partial region is greater than an impurity concentration of the first conductivity type in the third partial region.

15. The device according to claim 1 , wherein
the first semiconductor region includes a fifth partial region,
the fifth partial region is provided between the first conductive part and the first partial region, and
an impurity concentration of the first conductivity type in the fifth partial region is greater than an impurity concentration of the first conductivity type in the first partial region.

16. The device according to claim 1 , further comprising:
a second semiconductor region of a second conductivity type,
the second semiconductor region being between the second conductive part and a portion of the third partial region in the first direction,
an other portion of the third partial region being between the second semiconductor region and the first insulating region in the second direction.

17. The device according to claim 1 , further comprising:
a first member,
the first semiconductor region further including a fourth partial region,
the second partial region being between the first partial region and the fourth partial region in the second direction,
a direction from the fourth partial region toward the first member being along the first direction,
a direction from at least a portion of the third partial region toward the first member being along the second direction,
the first insulating part including a second insulating region,
the second insulating region being between the first member and the at least a portion of the third partial region in the second direction,
the first member being electrically connected to the fourth partial region,
the first member being electrically connected to the second conductive part or capable of being electrically connected to th

Assignees

• Toshiba Kk
• Toshiba Electronic Devices & Storage Corp

Inventors

• Inokuchi Tomoaki
• Gangi Hiro
• Kobayashi Yusuke
• Kuraguchi Masahiko
• Takao Kazuto
• Iijima Ryosuke
• Shimizu Tatsuo
• Nishiwaki Tatsuya

Classifications

• H10D64/256

  for lateral devices wherein the source or drain electrodes are recessed in semiconductor bodies (source or drain electrodes of TFTs H10D30/673) · CPC title

• H10D62/106

  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions · CPC title

• H10D64/647

  Schottky drain or source electrodes for IGFETs · CPC title

• H10D64/117

  Recessed field plates, e.g. trench field plates or buried field plates · CPC title

• H10D62/151

  of IGFETs  (of IGFETs having LDD or DDD structure H10D30/601; of thin film transistors H10D30/6713) · CPC title