Quantum dots and devices including the same

Patent metadata

Field	Value
Publication number	US-11355583-B2
Application number	US-201715659758-A
Country	US
Kind code	B2
Filing date	Jul 26, 2017
Priority date	Jul 28, 2016
Publication date	Jun 7, 2022
Grant date	Jun 7, 2022

Abstract

A quantum dot includes: a core including a first semiconductor nanocrystal, and a shell disposed on the core, the shell including a second semiconductor nanocrystal and a dopant, wherein the first semiconductor nanocrystal includes a Group III-V compound, the second semiconductor nanocrystal includes zinc (Zn), sulfur (S), and selenium, and the dopant includes lithium, a Group 2A metal having an effective ionic radius less than an effective ionic radius of Zn2+, a Group 3A element having an effective ionic radius less than an effective ionic radius of Zn2+, or a combination thereof. Also a method of producing the quantum dot, and a composite, and an electronic device including the quantum dot.

First claim

What is claimed is:

1. A quantum dot, comprising:
a core comprising a first semiconductor nanocrystal, and
a shell disposed on the core, the shell comprising:
a second semiconductor nanocrystal and a dopant within the second semiconductor nanocrystal,

wherein,
the first semiconductor nanocrystal comprises a Group III-V compound,
the second semiconductor nanocrystal comprises zinc, sulfur, and selenium,
the dopant comprises a Group 2A metal having an effective ionic radius less than an effective ionic radius of Zn 2+ , a Group 3A element having an effective ionic radius less than the effective ionic radius of Zn 2+ , or a combination thereof,
wherein the quantum dot does not include cadmium,
wherein the quantum dot has an emission peak with a full width at half maximum of less than 40 nanometers,
wherein the quantum dot has a quantum yield greater than or equal to 80%, and
wherein the core does not include copper.

2. The quantum dot of claim 1 , wherein the Group III-V compound further comprises a Group II metal, a Group IV metal, or a combination thereof.

3. The quantum dot of claim 1 , wherein the first semiconductor nanocrystal further comprises a Group II-VI compound, a Group IV-VI compound, a Group I-III-VI compound, a Group I-II-IV-VI compound, or a combination thereof.

4. The quantum dot of claim 1 , wherein the first semiconductor nanocrystal comprises InP, InZnP, or a combination thereof.

5. The quantum dot of claim 1 , wherein in the shell, a molar ratio of sulfur with respect to selenium is greater than or equal to about 1.

6. The quantum dot of claim 1 , wherein the shell comprises a first shell layer and a second shell layer is adjacent to the first shell layer,
wherein a composition of the first shell layer is different than a composition of the second shell layer, and
wherein the second shell layer comprises the second semiconductor nanocrystal and the dopant.

7. The quantum dot of claim 6 , wherein the first shell layer comprises a third semiconductor nanocrystal and is disposed directly on the core, and
wherein a bandgap energy of the third semiconductor nanocrystal is greater than a bandgap energy of the first semiconductor nanocrystal, and
wherein the bandgap energy of the third semiconductor nanocrystal is less than a bandgap energy of the second semiconductor nanocrystal.

8. The quantum dot of claim 7 , wherein the third semiconductor nanocrystal is ZnSe, ZnTe, or a combination thereof.

9. The quantum dot of claim 1 , wherein the quantum dot further comprises an outermost layer disposed on the shell layer, and wherein the outermost layer comprises Zn and S.

10. The quantum dot of claim 1 , wherein in the shell, a molar ratio of sulfur with respect to selenium changes in a radial direction.

11. The quantum dot of claim 1 , wherein the Group 2A element comprises beryllium, magnesium, or a combination thereof, and wherein the Group 3A element comprises aluminum, gallium, boron, or a combination thereof.

12. The quantum dot of claim 1 , wherein an amount of the dopant is less than or equal to about 0.3 mole with respect to 1 mole of Zn.

13. The quantum dot of claim 1 , wherein an amount of the dopant is less than or equal to about 0.1 mole with respect to 1 mole of Zn.

14. The quantum dot of claim 1 , wherein the dopant comprises aluminum, gallium, beryllium, magnesium, boron, or a combination thereof.

15. A method of producing a quantum dot, the method comprising:
providing a mixture including a core including a first semiconductor nanocrystal, a first shell precursor containing zinc, a second shell precursor containing sulfur, a third shell precursor containing selenium, an organic ligand, a solvent, and a dopant precursor including a dopant; and
heating the mixture to a reaction temperature to form a shell on the core, wherein the shell comprises a second semiconductor nanocrystal and the dopant within the second semiconductor nanocrystal,
wherein the second semiconductor nanocrystal comprises zinc, sulfur, and selenium,
wherein the dopant comprises a Group 2A metal having an effective ionic radius less than an effective ionic radius of Zn 2+ , a Group 3A element having an effective ionic radius less than an effective ionic radius of Zn 2+ , or a combination thereof,
wherein the quantum dot does not include cadmium,
wherein the quantum dot has an emission peak having a full width at half maximum of less than 40 nanometers,
wherein the quantum dot has a quantum yield greater than or equal to 80%, and
wherein the core does not include copper.

16. The method of claim 15 , wherein the dopant precursor includes an oleate, a stearate, a chloride, an octanoate, a hydride, an isopropoxide, a palmitate, an organoborane, or a combination thereof.

17. The method of claim 16 , wherein the dopant precursor comprises aluminum oleate, aluminum monostearate, aluminum chloride, aluminum octanoate, aluminum isopropoxide, magnesium stearate, magnesium oleate, magnesium (isopropyl) chloride, borane, triethylborane, gallium oleate, or a combination thereof.

18. The method of claim 15 , wherein the dopant precursor comprises aluminum, gallium, beryllium, magnesium, boron, or a combination thereof.

19. The method of claim 15 , wherein in the mixture, a content of sulfur is greater than a content of selenium.

20. The method of claim 15 , wherein the mixture further comprises an ionic liquid.

21. A quantum dot polymer composite, comprising:
a polymer matrix; and a quantum dot disposed in the polymer matrix, the quantum dot comprising:
a core comprising a first semiconductor nanocrystal, and
a shell disposed on the core, the shell comprising a second semiconductor nanocrystal and a dopant within the second semiconductor nanocrystal,

wherein
the first semiconductor nanocrystal comprises a Group III-V compound,
the second semiconductor nanocrystal comprises zinc, sulfur, and selenium,
the dopant comprises a Group 2A metal having an effective ionic radius less than an effective ionic radius of Zn 2+ , a Group 3A element having an effective ionic radius less than the effective ionic radius of Zn 2+ , or a combination thereof,
the quantum dot does not include cadmium, the quantum dot has an emission peak with a full width at half maximum of less than 40 nanometers,
the quantum dot has a quantum yield greater than or equal to 80%, and
wherein the core does not include copper.

22. The quantum dot polymer composite of claim 21 , wherein the polymer matrix comprises a thiol-ene resin, a (meth)acrylate polymer, a urethane resin, an epoxy resin, a vinyl polymer, a silicone resin, or a combination thereof.

23. An electronic device, comprising:
a quantum dot, the quantum dot comprising:
a core comprising a first semiconductor nanocrystal, and
a shell disposed on the core, the shell comprising a second semiconductor nanocrystal and a dopant within the second semiconductor nanocrystal,

wherein
the first semiconductor nanocrystal comprises a Group III-V compound,
the second semiconductor nanocrystal comprises zinc, sulfur, and selenium,
the dopant comprises a Group 2A metal having an effective ionic radius less than an effective ionic radius of Zn 2+ , a Group 3A element having an effective ionic radius less than the effective ionic radius of Zn 2+ , or a combination thereof,
the quantum dot does not include cadmium,
the quantum dot has an emission peak with a full width at half maximum of less than 40 nanometers,
t

Assignees

• Samsung Electronics Co Ltd

Inventors

• Kwon Soo Kyung
• Kim Yongwook
• Jang Eun Joo
• MIN Jihyun

Classifications

• C09K11/02 Primary

  Use of particular materials as binders, particle coatings or suspension media therefor · CPC title

• H10H20/8512

  Wavelength conversion materials · CPC title

• H10H20/818

  within the light-emitting regions · CPC title

• H10F77/1433

  Quantum dots · CPC title

• H10F77/1215

  characterised by the dopants · CPC title