Highly luminescent nanostructures and methods of producing same

Patent metadata

Field	Value
Publication number	US-9631141-B2
Application number	US-201514669436-A
Country	US
Kind code	B2
Filing date	Mar 26, 2015
Priority date	Jul 2, 2012
Publication date	Apr 25, 2017
Grant date	Apr 25, 2017

Abstract

Highly luminescent nanostructures, particularly highly luminescent quantum dots, are provided. The nanostructures have high photoluminescence quantum yields and in certain embodiments emit light at particular wavelengths and have a narrow size distribution. The nanostructures can comprise ligands, including C5-C8 carboxylic acid ligands employed during shell formation and/or dicarboxylic or polycarboxylic acid ligands provided after synthesis. Processes for producing such highly luminescent nanostructures are also provided, including methods for enriching nanostructure cores with indium and techniques for shell synthesis.

First claim

What is claimed is:

1. A composition comprising a population of nanostructures, which population displays a photoluminescence quantum yield of 70% or greater, wherein a photoluminescence spectrum of the population has a full width at half maximum of 50 nm or less, and an emission maximum between 450 nm and 750 nm, and wherein the nanostructures comprise InP/ZnS x Se 1-x /ZnS core/shell quantum dots, wherein 0<x<1.

2. The composition of claim 1 , wherein x is 0.25≦x≦0.75.

3. The composition of claim 1 , wherein the InP cores have an average diameter between about 15 Å and about 20 Å.

4. The composition of claim 1 , wherein the ZnS x Se 1-x shell is about 0.5 monolayer thick and the ZnS shell is about 2.0 monolayers thick.

5. The composition of claim 1 , comprising a C5-C8 carboxylic acid ligand bound to the nanostructures, which ligand is an unbranched alkyl carboxylic acid.

6. A composition comprising a population of nanostructures, which population displays a photoluminescence quantum yield of 75% or greater, wherein the nanostructures are InP/ZnS x Se 1-x /ZnS core/shell quantum dots, where 0<x<1, and are substantially free of Ga; and wherein a photoluminescence spectrum of the population has an emission maximum between 450 nm and 750 nm and a full width at half maximum of 60 nm or less.

7. The composition of claim 6 , wherein 0.25<x<0.75.

8. The composition of claim 6 , wherein the InP cores have an average diameter between about 15 Å and about 20 Å.

9. The composition of claim 8 , wherein the ZnS x Se 1-x shell is about 0.5 monolayer thick and the ZnS shell is about 2.0 monolayers thick.

10. A composition comprising a population of nanostructures, which population displays a photoluminescence quantum yield of 65% or greater, wherein a photoluminescence spectrum of the population has an emission maximum between 600 nm and 650 nm, and wherein the nanostructures comprise InP/ZnS x Se 1-x /ZnS core/shell quantum dots, where 0<x<1.

11. The composition of claim 10 , wherein 0.25≦x≦0.75.

12. The composition of claim 10 , wherein the InP cores have an average diameter between about 25 Å and about 30 Å.

13. The composition of claim 12 , wherein the ZnS x Se 1-x shell is about 0.5 monolayer thick and the ZnS shell is about 2.0 monolayers thick.

14. The composition of claim 10 , comprising a C5-C8 carboxylic acid ligand bound to the nanostructures, which ligand is an unbranched alkyl carboxylic acid.

15. The composition of claim 14 , comprising a dicarboxylic or polycarboxylic acid ligand bound to the nanostructures.

16. A population of InP/ZnS x Se 1-x /ZnS core/shell quantum dots, where 0.25≦x≦0.75, wherein the ZnS x Se 1-x shell is between about 0.3 and about 1.0 monolayer thick and the ZnS shell is between about 1.0 and about 3.0 monolayers thick.

17. The population of claim 16 , wherein the ZnS x Se 1-x shell is about 0.5 monolayer thick and the ZnS shell is about 2.0 monolayers thick.

18. The population of claim 16 , wherein the InP cores have an average diameter between about 15 Å and about 20 Å or between about 25 Å and about 30 Å.

19. A method for production of core/shell nanostructures where the shell comprises at least two layers, the method comprising:
providing InP nanostructure cores;
providing a first set of one or more precursors and reacting the precursors to produce a first layer of the shell, which first layer comprises ZnS x Se 1-x , where 0.25≦x≦0.75; and
then providing a second set of one or more precursors and reacting the precursors to produce a second layer of the shell, which second layer comprises ZnS.

20. The method of claim 19 , wherein the InP cores have an average diameter between about 15 Å and about 20 Å or between about 25 Å and about 30 Å.

21. The method of claim 19 , wherein the first set of precursors comprises diethyl zinc, bis(trimethylsilyl)selenide, and hexamethyldisilthiane, and wherein the second set of precursors comprises diethyl zinc and hexamethyldisilthiane.

22. A method for enriching InP nanostructures, the method comprising:
producing InP nanostructures in solution;
removing the InP nanostructures from the solution in which they were produced;
then suspending the InP nanostructures in at least one solvent and contacting the suspended nanostructures with a first precursor at a temperature of 200-230° C. to enrich the nanostructures, which first precursor comprises In.

23. The method of claim 22 , wherein the InP nanostructures have an average diameter between about 15 Å and about 20 Å or between about 25 Å and about 30 Å.

24. The method of claim 22 , wherein the first precursor is an indium carboxylate or indium laurate.

25. The method of claim 22 , comprising, after contacting the suspended nanostructures with the first precursor, adding one or more second precursors and reacting the second precursors to form a shell.

26. The method of claim 25 , comprising adding a nanostructure ligand and reacting the second precursors in the presence of the ligand to form the shell.

27. The method of claim 26 , wherein the ligand is a C5-C8 carboxylic acid ligand.

28. The method of claim 26 , comprising, after forming the shell, exchanging the ligand with a dicarboxylic or polycarboxylic acid ligand.

29. The method of claim 25 , wherein adding one or more second precursors and reacting the second precursors to form the shell comprises:
providing a first set of one or more second precursors and reacting them to produce a first layer of the shell, which first layer comprises ZnS x Se 1-x where 0.25≦x≦0.75, wherein the first set of second precursors comprises diethyl zinc, bis(trimethylsilyl)selenide, and hexamethyldisilthiane; and
then providing a second set of one or more second precursors and reacting them to produce a second layer of the shell, which second layer comprises ZnS, and wherein the second set of second precursors comprises diethyl zinc and hexamethyldisilthiane.

Assignees

• Nanosys Inc

Inventors

• Guo Wenzhuo
• Chen Jian
• Dubrow Robert
• Freeman William P

Classifications

• H10H20/8512

  Wavelength conversion materials · CPC title

• H01L33/502

  Electricity · mapped topic

• C09K11/883 Primary

  with zinc or cadmium · CPC title

• Y10S977/774

  Exhibiting three-dimensional carrier confinement, e.g. quantum dots · CPC title

• B82Y40/00

  Manufacture or treatment of nanostructures · CPC title