Compact radio frequency (rf) communication modules with endfire and broadside antennas
US-2019103682-A1 · Apr 4, 2019 · US
US11355451B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11355451-B2 |
| Application number | US-202017002607-A |
| Country | US |
| Kind code | B2 |
| Filing date | Aug 25, 2020 |
| Priority date | Aug 28, 2019 |
| Publication date | Jun 7, 2022 |
| Grant date | Jun 7, 2022 |
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In one example, a semiconductor device comprises a substrate comprising a conductive structure, a first electronic component over the substrate, an encapsulant over the substrate and contacting a lateral side of the first electronic component, a shield over the encapsulant and contacting a lateral side of the encapsulant and a portion of a lateral side of the substrate, and a communication structure coupled with the substrate. The substrate comprises a vertical groove side and a horizontal groove side defining a groove in the substrate, wherein a portion of the groove is uncovered by the shield. Other examples and related methods are also disclosed herein.
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The invention claimed is: 1. A semiconductor device, comprising: a substrate comprising a conductive structure; a first electronic component over the substrate; an encapsulant over the substrate and contacting a lateral side of the first electronic component; a shield over the encapsulant and contacting a lateral side of the encapsulant and a portion of a lateral side of the substrate; and a communication structure coupled with the substrate; wherein the substrate comprises a vertical groove side and a horizontal groove side defining a groove in the substrate, wherein a portion of the groove is uncovered by the shield. 2. The semiconductor device of claim 1 , wherein the communication structure comprises an antenna in the substrate. 3. The semiconductor device of claim 1 , wherein the communication structure is in the substrate laterally bounded by the vertical groove side, and the vertical groove side is uncovered by the shield. 4. The semiconductor device of claim 1 , comprising a second electronic component coupled with the substrate, wherein the encapsulant contacts a lateral side of the second electronic component. 5. The semiconductor device of claim 1 , comprising a second electronic component coupled with the substrate, wherein the second electronic component is external to the encapsulant. 6. The semiconductor device of claim 1 , comprising a second electronic component coupled with the substrate, wherein the second electronic component is on a side of the substate opposite to the encapsulant. 7. The semiconductor device of claim 1 , comprising a second electronic component coupled with the substrate, the second electronic component having an antenna as the communication structure. 8. The semiconductor device of claim 1 , comprising a second electronic component coupled with the substrate, the second electronic component having a connector to connect with an external device. 9. A semiconductor device, comprising: a substrate comprising a conductive structure and having a first side and a second side opposite to the first side, wherein the substrate comprises a groove in the second side at a lateral side of the substrate; a first electronic device over the first side of the substrate; an encapsulant over the first side of the substrate and contacting a lateral side of the electronic device; a shield over the encapsulant and contacting a lateral side of the substrate and coupled with the conductive structure; and a second electronic component external to the shield. 10. The semiconductor device of claim 9 , wherein the second electronic component comprises an antenna.
Cutting or separating of wafers, substrates or parts of devices · CPC title
Package configurations · CPC title
the substrate having spherical bumps for external connection · CPC title
using batch processing · CPC title
at high-frequency [HF] or radio frequency [RF] · CPC title
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