Method and apparatus for producing AlN whiskers, AlN whisker bodies, AlN whiskers, resin molded body, and method for producing resin molded body

Patent metadata

Field	Value
Publication number	US-11345640-B2
Application number	US-201816494928-A
Country	US
Kind code	B2
Filing date	Mar 16, 2018
Priority date	Mar 17, 2017
Publication date	May 31, 2022
Grant date	May 31, 2022

Abstract

A method and apparatus for producing AlN whiskers includes reduced incorporation of metal particles, an AlN whisker body, AlN whiskers, a resin molded body, and a method for producing the resin molded body. The method for producing AlN whiskers includes heating an Al-containing material in a material accommodation unit to thereby generate Al gas; and introducing the Al gas into a reaction chamber through a communication portion while introducing nitrogen gas into the reaction chamber through a gas inlet port, to thereby grow AlN whiskers on the surface of an Al 2 O 3 substrate placed in the reaction chamber.

First claim

The invention claimed is:

1. A method for producing AlN whiskers, the method comprising:
heating an Al-containing material in a first chamber to thereby generate Al gas;
introducing the Al gas into a second chamber through a first inlet port while introducing nitrogen gas into the second chamber through a second inlet port; and
growing AlN whiskers on the surface of an insulating substrate placed in the second chamber.

2. A method for producing AlN whiskers according to claim 1 , wherein
the insulating substrate is any of an Al 2 O 3 substrate, an AlN polycrystalline substrate, Al 2 O 3 particles, and AlN particles.

3. A method for producing AlN whiskers according to claim 1 ,
wherein the atmosphere temperature in the second chamber is adjusted to 1,500° C. to 1,800° C. during growth of AlN whiskers.

4. A method for producing AlN whiskers, the method comprising:
heating an Al-containing material in a first chamber to thereby generate Al gas;
introducing the Al gas into a second chamber through a first inlet port while introducing nitrogen gas into the second chamber through a second inlet port;
growing a fibrous AlN single crystal on the surface of an insulating substrate placed in the second chamber;
forming an oxygen atom-containing layer on the surface of the AlN single crystal; and
forming a hydrocarbon group on the surface of the oxygen atom-containing layer.

5. A method for producing AlN whiskers according to claim 4 , wherein,
in formation of the hydrocarbon group, the method comprises
mixing the AlN single crystal comprising the oxygen atom-containing layer with stearic acid and cyclohexane, and
refluxing the resultant mixture.

Assignees

• Univ Nagoya Nat Univ Corp

Inventors

• Ujihara Toru
• Takeuchi Yukihisa
• SHIOJIRI Daishi
• Matsumoto Masaki
• Saito Hiroshi
• Hayashi Ikuo

Classifications

• C04B35/80

  Fibres, filaments, whiskers, platelets, or the like · CPC title

• C04B2235/3225

  Yttrium oxide or oxide-forming salts thereof · CPC title

• C04B35/62625

  Wet mixtures · CPC title

• C30B25/005

  Growth of whiskers or needles · CPC title

• C01B21/0722

  Preparation by direct nitridation of aluminium · CPC title