Implanting method and apparatus

Patent metadata

Field	Value
Publication number	US-11340530-B2
Application number	US-201916679315-A
Country	US
Kind code	B2
Filing date	Nov 11, 2019
Priority date	Dec 14, 2018
Publication date	May 24, 2022
Grant date	May 24, 2022

Abstract

The instant disclosure includes an implanting apparatus and a method thereof. The implanting apparatus has a chuck configured to carry a substrate is rotated a number of times at an angle during ion implantation. In this way, masks used during semiconductor fabrication is reduced.

First claim

What is claimed is:

1. An implanting method, comprising:
disposing a substrate on a chuck;
analyzing the substrate to determine a rotational displacement of the substrate by an analyzer;
implanting ions to the substrate;
rotating the substrate X times and rotating the substrate at N angle each time when the rotational displacement is 0; and
rotating the substrate Y times and rotating the substrate at M angle each time when the rotational displacement is greater than 0.

2. The method of claim 1 , wherein the substrate has a first transistor and a second transistor orthogonally arranged with respect to the first transistor.

3. The method of claim 1 , wherein rotating the substrate X times is rotating the substrate four times and rotating the substrate at N angle each time is rotating the substrate at 90° each time.

4. The method of claim 1 , wherein rotating the substrate Y times is rotating the substrate eight times and rotating the substrate at M angle each time is rotating the substrate at 45° each time.

5. The method of claim 1 , wherein the ions are for extension implants.

6. The method of claim 5 , wherein the ions include at least one of Boron fluoride (BF 2 ) and Arsenic ions (As + ).

7. The method of claim 5 , wherein a dose concentration for the ions ranges from about 1E13/cm 2 to 5E14/cm 2 .

8. The method of claim 5 , wherein an energy used for implanting the ions ranges from about 2KeV to 10KeV.

9. The method of claim 5 , wherein a tilting angle of the ions ranges from about 0° to 10°.

10. The method of claim 1 , wherein the ions are for halo implants.

11. The method of claim 10 , wherein the ions include at least one of Arsenic ions (As + ) and Boron ions(B + ).

12. The method of claim 10 , wherein a dose concentration for the ions ranges from about 1E13/cm 2 to 5E14/cm 2 .

13. The method of claim 10 , wherein an energy used for implanting the ions ranges from about 5KeV to 50KeV.

14. The method of claim 10 , wherein a tilting angle of the ions ranges from about 0° to 20°.

15. The method of claim 1 , wherein the substrate is rotated by rotating a chuck where the substrate is disposed on.

16. The method of claim 15 , further comprising:
rotating the chuck using a stepper motor mechanically coupled to a shaft of the chuck, wherein a full rotation of the stepper motor is divided into a number of steps, the number of steps being dependent on the rotational displacement of the substrate.

Assignees

• Xia Tai Xin Semiconductor Qing Dao Ltd

Inventors

• Choi Jong-Moo
• Kim Sung-Ki

Classifications

• H10P50/695

  characterised by the process involved to create the mask, e.g. lift-off masks or sidewalls or to modify the mask · CPC title

• H10P30/202

  characterised by the semiconductor materials · CPC title

• H10P30/20 Primary

  into semiconductor materials, e.g. for doping · CPC title

• H10D84/038

  using silicon technology, e.g. SiGe · CPC title

• G03F7/3021 Primary

  from a wafer supported on a rotating chuck · CPC title