Resist composition and patterning process

US11340527B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-11340527-B2
Application numberUS-202017082175-A
CountryUS
Kind codeB2
Filing dateOct 28, 2020
Priority dateNov 7, 2019
Publication dateMay 24, 2022
Grant dateMay 24, 2022

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  1. Title

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  2. Abstract

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  5. First independent claim

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Abstract

Official abstract text for this publication.

A resist composition containing: (A) a resin containing a repeating unit having an acid-labile group and not containing a repeating unit having an aromatic substituent; (B) a photo-acid generator shown by a general formula (B-1); and (C) a solvent, where W1 represents a cyclic divalent hydrocarbon group having 4 to 12 carbon atoms and containing a heteroatom; W2 represents a cyclic monovalent hydrocarbon group having 4 to 14 carbon atoms and not containing a heteroatom; Rf represents a divalent organic group shown by the following general formula; and M+ represents an onium cation. This provides a resist composition and a patterning process that uses the resist composition that show a particularly favorable mask dimension dependency (mask error factor: MEF), LWR, and critical dimension uniformity (CDU) particularly in photolithography where a high-energy beam such as an ArF excimer laser beam is used as a light source.

First claim

Opening claim text (preview).

The invention claimed is: 1. A resist composition comprising: (A) a resin containing a repeating unit having an acid-labile group and not containing a repeating unit having an aromatic substituent, the repeating unit having an acid-labile group shown by the following general formula (a1): where R 1 represents a hydrogen atom or a methyl group; and X represents at least one acid-labile group selected from (I) and (II): (I) 1-methylcyclopentyl, 1-ethylcyclopentyl, 1-n-propylcyclopentyl, 1-isopropylcyclopentyl, 1-n-butylcyclopentyl, 1-sec-butylcyclopentyl, 1-tert-butylcyclopentyl, 1-cyclohexylcyclopentyl, 1-(4-methoxy-n-butyl)cyclopentyl, 1-methylcyclohexyl, 1-ethylcyclohexyl, 3-methyl-1-cyclopenten-3-yl, 3-ethyl-1-cyclopenten-3-yl, 3-methyl-1-cyclohexen-3-yl, and 3-ethyl-1-cyclohexen-3-yl; (II) groups shown by the following formulae: (B) a photo-acid generator that (III) consists of the photo-acid generator shown by the general formula (B-1); or (IV) includes a combination of the photo-acid generator shown by the general formula (B-1) and at least one other photo-acid generator selected from the photo-acid generators shown by formula (B-2), formula (B-3), and formula (B-4); and (C) a solvent, General Formula (B-1): wherein W 1 represents a cyclic divalent hydrocarbon group having 4 to 12 carbon atoms and containing a heteroatom; W 2 represents a cyclic monovalent hydrocarbon group having 4 to 14 carbon atoms and not containing a heteroatom; Rf represents a divalent organic group shown by the above general formula; A 1 and A 2 each independently represent a hydrogen atom or a trifluoromethyl group; B 1 and B 2 each independently represent a hydrogen atom or a fluorine atom; * represents an attachment point for a carbonyloxy group; “m” represents an integer of 0 to 4; “n” represents an integer of 1; and M + represents an onium cation that is at least one cation selected from the cations of the following formula group (b1) and formula (b2): (i) formula group (b1): (ii) formula (b2): wherein R 44 and R 45 each independently represent a linear, branched, or cyclic monovalent hydrocarbon group having 1 to 20 carbon atoms and optionally containing a heteroatom, General Formulas (B-2), (B-3), and (B-4): wherein A 1 represents a hydrogen atom or a trifluoromethyl group; R 21 represents a linear, branched, or cyclic monovalent hydrocarbon group having 1 to 35 carbon atoms optionally containing an oxygen atom, a nitrogen-containing heterocyclic group, or a group represented by the following formula (i); M B + represents the same onium cation as M + ; where R 31 and R 32 each independently represent a hydrogen atom, or a linear, branched, or cyclic monovalent hydrocarbon group having 1 to 20 carbon atoms optionally containing a heteroatom; R 31 and R 32 optionally bond with each other to form a ring with a nitrogen atom bonded to R 31 and R 32 ; R 33 represents a linear, branched, or cyclic divalent hydrocarbon group having 1 to 20 carbon atoms optionally containing a heteroatom; wherein A 2 represents a hydrogen atom or a trifluoromethyl group; R 22 , R 23 , and R 24 each independently represent a hydrogen atom or a linear, branched, or cyclic monovalent hydrocarbon group having 1 to 20 carbon atoms optionally containing a heteroatom; “p” and “q” each independently represent an integer of 0 to 5; “r” represents an integer of 0 to 4; L represents a single bond, an ether group, or a linear, branched, or cyclic divalent hydrocarbon group having 1 to 20 carbon atoms optionally containing a heteroatom; A 3 and A 4 each independently represent a hydrogen atom or a trifluoromethyl group, and are not both a hydrogen atom at the same time; and R 25 represents a linear, branched, or cyclic monovalent hydrocarbon group having 1 to 35 carbon atoms optionally containing an oxygen atom, a nitrogen-containing heterocyclic group, or a group shown by the formula (i). 2. The resist composition according to claim 1 , wherein W 1 in the general formula (B-1) represents a cyclic divalent hydrocarbon group containing a lactone ring structure having 6 to 12 carbon atoms. 3. The resist composition according to claim 1 , wherein W 2 in the general formula (B-1) represents a polycyclic monovalent hydrocarbon group having 7 to 14 carbon atoms and not containing a heteroatom. 4. The resist composition according to claim 2 , wherein W 2 in the general formula (B-1) represents a polycyclic monovalent hydrocarbon group having 7 to 14 carbon atoms and not containing a heteroatom. 5. The resist composition according to claim 1 , wherein the group Rf in the general formula (B-1) is selected from groups shown by the following formulae (Rf-1) and (Rf-3) to (Rf-6), wherein * represents an attachment point for a carbonyloxy group. 6. The re

Assignees

Inventors

Classifications

  • the macromolecular compound being present in a chemically amplified negative photoresist composition · CPC title

  • characterised by the solvents or agents facilitating spreading, e.g. tensio-active agents · CPC title

  • C8-(meth)acrylate, e.g. isooctyl (meth)acrylate or 2-ethylhexyl (meth)acrylate · CPC title

  • Sulfonium compounds · CPC title

  • G03F7/004Primary

    Photosensitive materials (G03F7/12, G03F7/14 take precedence) · CPC title

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What does patent US11340527B2 cover?
A resist composition containing: (A) a resin containing a repeating unit having an acid-labile group and not containing a repeating unit having an aromatic substituent; (B) a photo-acid generator shown by a general formula (B-1); and (C) a solvent, where W1 represents a cyclic divalent hydrocarbon group having 4 to 12 carbon atoms and containing a heteroatom; W2 represents a cyclic monovalent h…
Who is the assignee on this patent?
Shinetsu Chemical Co
What technology area does this patent fall under?
Primary CPC classification G03F7/004. Mapped technology areas include Physics.
When was this patent published?
Publication date Tue May 24 2022 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 12 related publications on this page (citations in our corpus or others sharing the same primary CPC).