Low power single retention pin flip-flop with balloon latch

Patent metadata

Field	Value
Publication number	US-11336272-B2
Application number	US-202017028790-A
Country	US
Kind code	B2
Filing date	Sep 22, 2020
Priority date	Sep 22, 2020
Publication date	May 17, 2022
Grant date	May 17, 2022

Abstract

Systems, apparatuses, and methods for implementing a low-power, single-pin retention flip-flop with a balloon latch are described. A flip-flop is connected to a retention latch to store a value of the flip-flop during a reduced power state. A single retention pin is used to turn on the retention latch. During normal mode, the retention latch is pre-charged and a change in the value stored by the flip-flop does not cause the retention latch to toggle. This helps to reduce the power consumed by the circuit during normal mode (i.e., non-retention mode). When the retention signal becomes active, the retention latch gets triggered and the value stored by the flip-flop is written into the retention latch. Later, if the flip-flop is powered down and then powered back up while the circuit is in retention mode, the value in the retention latch gets written back into the flip-flop.

First claim

What is claimed is:

1. A flip-flop circuit comprising:
a primary latch configured to latch a data value present on an input port responsive to detecting a synchronizing edge of a clock signal;
a secondary latch coupled to the primary latch, wherein the secondary latch is configured to latch the data value stored by the primary latch; and
a retention latch coupled to the secondary latch, wherein the retention latch is configured to:
remain in a pre-charge state when a single retention mode pin is a first value; and
receive and store the data value of the secondary latch when the single retention mode pin transitions from the first value to a second value;

wherein the data value stored by the primary latch is unaffected by a value of the single retention mode pin and a logic level of the clock signal following the synchronizing edge.

2. The flip-flop circuit as recited in claim 1 , wherein the retention latch is configured to continuously write a data value back to the secondary latch when the single retention mode pin is the second value, and wherein an output of the secondary latch is disabled when the single retention mode pin is the second value.

3. The flip-flop circuit as recited in claim 1 , wherein when the retention latch is in the pre-charge state, the retention latch does not respond to changes in the data value stored by the secondary latch.

4. The flip-flop circuit as recited in claim 1 , wherein a first input received by the retention latch from the secondary latch is coupled to a gate of a first N-type transistor, and wherein a second input received by the retention latch from the secondary latch is coupled to a gate of a second N-type transistor.

5. The flip-flop circuit as recited in claim 4 , wherein a node of the retention latch is coupled to a gate of a third N-type transistor of the secondary latch.

6. The flip-flop circuit as recited in claim 5 , wherein a drain of the third N-type transistor is coupled to a pre-buffered data output of the flip-flop circuit.

7. The flip-flop circuit as recited in claim 6 , wherein a signal from the single retention mode pin is coupled to a gate of a fourth N-type transistor, wherein the fourth N-type transistor activates the first and second N-type transistors when the signal from the single retention mode pin is the first value.

8. A method comprising:
receiving, by a primary latch, a data value present on an input port responsive to detecting a synchronizing edge of a clock signal;
latching, by a secondary latch, the data value stored by the primary latch; and
receiving, by a retention latch, a value from the secondary latch, the retention latch:
remaining in a pre-charge state when a single retention mode pin is a first value; and
receiving and storing the data value of the secondary latch when the single retention mode pin transitions from the first value to a second value;

wherein the data value stored by the primary latch is unaffected by a value of the single retention mode pin and a logic level of the clock signal following the synchronizing edge.

9. The method as recited in claim 8 , further comprising continuously writing the data value back to the secondary latch when the single retention mode pin is the second value, and disabling an output of the secondary latch when the single retention mode pin is the second value.

10. The method as recited in claim 8 , wherein when the retention latch is in the pre-charge state, the retention latch does not respond to changes in the data value stored by the secondary latch.

11. The method as recited in claim 8 , further comprising:
receiving, from the secondary latch, a first input on a gate of a first N-type transistor of the retention latch;
receiving, from the secondary latch, a second input on a gate of a second N-type transistor of the retention latch.

12. The method as recited in claim 11 , wherein a node of the retention latch is coupled to a gate of a third N-type transistor of the secondary latch.

13. The method as recited in claim 12 , wherein a drain of the third N-type transistor is coupled to a pre-buffered data output.

14. The method as recited in claim 13 , wherein a signal from the single retention mode pin is coupled to a gate of a fourth N-type transistor, wherein the method further comprising activating, by the fourth N-type transistor, the first and second N-type transistors when the signal from the single retention mode pin is the first value.

15. A system comprising:
a secondary latch coupled to receive a value from a primary latch, wherein the primary latch is configured to latch a data value present on an input port responsive to detecting a synchronizing edge of a clock signal; and
a retention latch coupled to the secondary latch, wherein the retention latch is configured to:
remain in a pre-charge state when a single retention mode pin is a first value; and
receive and store a data value of the secondary latch when the single retention mode pin transitions from the first value to a second value;
wherein the data value stored by the primary latch is unaffected by a value of the single retention mode pin and a logic level of the clock signal following the synchronizing edge.

16. The system as recited in claim 15 , wherein the retention latch is configured to continuously write the data value back to the secondary latch when the single retention mode pin is the second value, and wherein an output of the secondary latch is disabled when the single retention mode pin is the second value.

17. The system as recited in claim 15 , wherein when the retention latch is in the pre-charge state, the retention latch does not respond to changes in the data value stored by the secondary latch.

18. The system as recited in claim 15 , wherein a first input received by the retention latch from the secondary latch is coupled to a gate of a first N-type transistor, and wherein a second input received by the retention latch from the secondary latch is coupled to a gate of a second N-type transistor.

19. The system as recited in claim 18 , wherein a node of the retention latch is coupled to a gate of a third N-type transistor.

20. The system as recited in claim 19 , wherein a drain of the third N-type transistor is coupled to a pre-buffered data output.

Assignees

• Apple Inc

Inventors

• Venugopal Vivekanandan
• Ye Qi

Classifications

• H03K3/0375 Primary

  provided with means for increasing reliability; for protection; for ensuring a predetermined initial state when the supply voltage has been applied; for storing the actual state when the supply voltage fails (digital storage cells each combining volatile and non-volatile storage properties G11C14/00) · CPC title

• H03K3/356008 Primary

  ensuring a predetermined initial state when the supply voltage has been applied; storing the actual state when the supply voltage fails (digital storage cells each combining volatile and non-volatile storage properties G11C14/00) · CPC title

• H03K3/037

  Bistable circuits · CPC title

• H03K3/012

  Modifications of generator to improve response time or to decrease power consumption · CPC title

• H03K3/02335

  provided with means for increasing reliability; for protection; for ensuring a predetermined initial state when the supply voltage has been applied; for storing the actual state when the supply voltage fails (digital storage cells each combining volatile and non-volatile storage properties G11C14/00) · CPC title