Tin oxide films in semiconductor device manufacturing
US-2018240667-A1 · Aug 23, 2018 · US
Diamond-like carbon film
US11332376B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11332376-B2 |
| Application number | US-202016922083-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jul 7, 2020 |
| Priority date | Jun 8, 2017 |
| Publication date | May 17, 2022 |
| Grant date | May 17, 2022 |
How to read this patent
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
- Title
What the patent document calls the invention.
- Abstract
A short plain-language summary of the technical disclosure.
- Assignees and inventors
Who owns or filed the patent and who is credited as inventor.
- Key dates
Filing, priority, publication, and grant dates set the timeline.
- First independent claim
The legal scope of protection — read this for what is actually claimed.
- CPC / IPC classifications
Technology tags used to group this patent with similar filings.
- Citations and related patents
Prior art links and similar publications in this corpus.
Abstract
Official abstract text for this publication.
Apparatuses and methods to manufacture integrated circuits are described. A method of forming film on a substrate is described. The film is formed on a substrate by exposing a substrate to a diamond-like carbon precursor having an sp3 content of greater than 40 percent. Methods of etching a substrate are described. Electronic devices comprising a diamond-like carbon film are also described.
First claim
Opening claim text (preview).
What is claimed is: 1. An electronic device comprising a film on a substrate, wherein the film comprises a diamond-like carbon material having a structure of formula (II) wherein each of R 13 -R 20 are independently selected from H, a halogen, or a substituted or unsubstituted C 1 -C 4 alkyl, and wherein the film has a Young's modulus greater than 180 GPa, measured at room temperature. 2. The electronic device of claim 1 , wherein the diamond-like carbon material comprises one or more of bicyclo[2.2.1]hepta-2,5-diene (2,5-norbornadiene) or norbornene (C 7 H 10 ). 3. The electronic device of claim 1 , wherein the film has a density greater than 1.8 g/cc. 4. The electronic device of claim 1 , wherein the film is etch selective and strip selective over spin-on-carbon (SOC). 5. The electronic device of claim 1 , wherein the film is a hard mask layer. 6. The electronic device of claim 1 , wherein the substrate comprises at least one feature selected from a peak, a trench, or a via. 7. The electronic device of claim 1 , wherein the film further comprises C 2 H 2 , C 3 H 6 , CH 4 , or C 4 H 8 .
Assignees
Inventors
Classifications
characterised by their composition, e.g. multilayer masks · CPC title
characterised by the process involved to create the mask, e.g. lift-off masks or sidewalls or to modify the mask · CPC title
characterised by their composition, e.g. multilayer masks or materials · CPC title
by chemical means · CPC title
using masks for insulating materials · CPC title
Patent family
Related publications grouped by family.
External sources
Frequently asked questions
Answers are generated from the same data shown on this page.
- What does patent US11332376B2 cover?
- Apparatuses and methods to manufacture integrated circuits are described. A method of forming film on a substrate is described. The film is formed on a substrate by exposing a substrate to a diamond-like carbon precursor having an sp3 content of greater than 40 percent. Methods of etching a substrate are described. Electronic devices comprising a diamond-like carbon film are also described.
- Who is the assignee on this patent?
- Applied Materials Inc
- What technology area does this patent fall under?
- Primary CPC classification H10P14/6902. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue May 17 2022 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 3 related publications on this page (citations in our corpus or others sharing the same primary CPC).