Solar cell

Patent metadata

Field	Value
Publication number	US-11329172-B2
Application number	US-201916456607-A
Country	US
Kind code	B2
Filing date	Jun 28, 2019
Priority date	Apr 3, 2013
Publication date	May 10, 2022
Grant date	May 10, 2022

Abstract

A bi-facial solar cell includes a silicon substrate, a first doped region formed on a front surface of the silicon substrate, an oxide layer formed on a back surface of the silicon substrate, a second doped region formed on the oxide layer and formed of a polycrystalline silicon layer, a first passivation layer formed on the first doped region, a first anti-reflection layer formed on the first passivation layer, a plurality of first finger electrodes connected to the first doped region through a first opening in the first passivation layer and the first anti-reflection layer, a second passivation layer formed on the second doped region, a second anti-reflection layer formed on the second passivation layer, and a plurality of second finger electrodes connected to the second doped region through a second opening in the second passivation layer and the second anti-reflection layer.

First claim

What is claimed is:

1. A bi-facial solar cell comprising:
a monocrystalline silicon substrate;
a front doped region formed inside of a front surface of the monocrystalline silicon substrate by diffusing a first conductive type dopant into the front surface of the monocrystalline silicon substrate;
a front passivation layer formed on the front doped region;
a front anti-reflection layer formed on the front passivation layer;
a front electrode having a plurality of front finger electrodes directly connected to the front doped region by penetrating through the front passivation layer and the front anti-reflection layer;
a tunneling oxide layer formed on a back surface of the monocrystalline silicon substrate;
a polycrystalline silicon back doped region formed directly on the tunneling oxide layer, and having a second conductive type dopant having a conductive type opposite to a conductive type of the first conductive type dopant; and
a back electrode having a plurality of back finger electrodes electrically connected to the polycrystalline silicon back doped region,
wherein only the polycrystalline silicon back doped region among the front doped region and the polycrystalline silicon back doped region forms a heterojunction structure with the monocrystalline silicon substrate,
wherein a back passivation layer formed of a first insulating material and a back anti-reflection layer formed of a second insulating material are sequentially formed on a back surface of the polycrystalline silicon back doped region, and have a plurality of openings configured to directly connect the plurality of back finger electrodes of the back electrode and the polycrystalline silicon back doped region.

2. The bi-facial solar cell according to claim 1 , wherein the front doped region includes an emitter area, and
wherein the polycrystalline silicon back doped region includes a back surface field area.

3. The bi-facial solar cell according to claim 1 , wherein the front doped region has a p-type conductivity, and
wherein the front passivation layer includes at least one of aluminum oxide, zirconium oxide, and hafnium oxide having a negative charge.

4. The bi-facial solar cell according to claim 1 , wherein the front doped region has an n-type conductivity, and
wherein the front passivation layer includes at least one of silicon oxide and silicon nitride having a positive charge.

5. The bi-facial solar cell according to claim 1 , wherein the polycrystalline silicon back doped region has a p-type conductivity, and
wherein the back passivation layer includes at least one of aluminum oxide, zirconium oxide, and hafnium oxide having a negative charge.

6. The bi-facial solar cell according to claim 1 , wherein the polycrystalline silicon back doped region has an n-type conductivity, and
wherein the back passivation layer includes at least one of silicon oxide and silicon nitride having a positive charge.

7. The bi-facial solar cell according to claim 1 , wherein the front anti-reflection layer or the back anti-reflection layer includes at least one selected from the group consisting of silicon nitride, silicon nitride containing hydrogen, silicon oxide, silicon oxide nitride, aluminum oxide, MgF 2 , ZnS, TiO 2 and CeO 2 .

8. The bi-facial solar cell according to claim 1 , wherein the front anti-reflection layer or the back anti-reflection layer is formed of a multilayer film including two or more films.

9. The bi-facial solar cell according to claim 1 , wherein the tunneling oxide layer has the thickness of about 0.5 nm to 5 nm.

10. The bi-facial solar cell according to claim 1 , further comprising another doped region at a portion of the monocrystalline silicon substrate facing the tunneling oxide layer.

11. The bi-facial solar cell according to claim 10 , wherein the another doped region has a dopant having a conductive type the same as the second conductive type dopant of the polycrystalline silicon back doped region.

12. The bi-facial solar cell according to claim 10 , wherein the another doped region has the same crystalline structure as the monocrystalline silicon substrate.

13. The bi-facial solar cell according to claim 1 , wherein the front doped region includes a front region that is directly contacted with the plurality of first finger electrodes and another region having a dopant concentration lower than a dopant concentration of the front region.

14. The bi-facial solar cell according to claim 1 , further comprising:
a plurality of front bus bar electrodes formed in a direction crossing the plurality of front finger electrodes to be parallel to each other; and
a plurality of back bus bar electrodes formed in a direction crossing the plurality of back finger electrodes to be parallel to each other.

15. The bi-facial solar cell according to claim 1 , wherein the front surface of the monocrystalline silicon substrate has a textured structure.

16. The bi-facial solar cell according to claim 15 , wherein the back surface of the monocrystalline silicon substrate has a textured structure.

17. The bi-facial solar cell according to claim 1 , wherein the plurality of back finger electrodes are disposed in parallel to each other with a first pitch.

18. The bi-facial solar cell according to claim 17 , further comprising a plurality of back bus bar electrodes disposed in parallel to each other with a second pitch larger than the first pitch.

19. The bi-facial solar cell according to claim 18 , wherein the plurality of back bus bar electrodes are apart from the polycrystalline silicon back doped region.

20. The bi-facial solar cell according to claim 19 , wherein at least one of the back passivation layer and the back anti-reflection layer is disposed between the plurality of back bus bar electrodes and the polycrystalline silicon back doped region.

21. The bi-facial solar cell according to claim 1 , wherein the front doped region and the polycrystalline silicon back doped region have about the same thickness of 5 nm to 100 nm, and
wherein the tunneling oxide layer and the back passivation layer are separated by a distance entirely based on the thickness of the polycrystalline silicon back doped region.

22. The bi-facial solar cell according to claim 10 , wherein the tunneling oxide layer is between the another doped region and the polycrystalline silicon back doped region.

Assignees

• Lg Electronics Inc

Inventors

• Chang Jaewon
• Shim Kyungjin
• Park Hyunjung
• Choi Junghoon

Classifications

• H10W70/098

  Applying pastes or inks, e.g. screen printing (H10W70/095 takes precedence) · CPC title

• Y02E10/547

  Monocrystalline silicon PV cells · CPC title

• H10F71/129

  Passivating · CPC title

• H10F71/128

  Annealing · CPC title

• H10F71/00

  Manufacture or treatment of devices covered by this subclass (patterning processes to connect thin photovoltaic cells in integrated devices, or assemblies of multiple devices, having photovoltaic cells H10F19/33; manufacture or treatment of encapsulations or containers for integrated devices, or assemblies of multiple devices, having photovoltaic cells H10F19/80; manufacture or treatment of integrated devices, or assemblies of multiple devices, comprising at least one element in which radiation controls the flow of current H10F39/00) · CPC title