Method of forming a layer structure, layer structure, method of forming a contact structure, method of forming a chip package, and chip package

Patent metadata

Field	Value
Publication number	US-11328935-B2
Application number	US-202016743571-A
Country	US
Kind code	B2
Filing date	Jan 15, 2020
Priority date	Jan 16, 2019
Publication date	May 10, 2022
Grant date	May 10, 2022

Abstract

A method of forming a layer structure is provided. The method may include plasma-treating a metal surface with a hydrogen-containing plasma, thereby forming nucleophilic groups over the metal surface, and forming an organic layer over the metal surface, wherein the organic layer comprises silane and is covalently bonded to the nucleophilic groups.

First claim

What is claimed is:

1. A method, comprising:
forming nucleophilic groups attached to a metal surface;
forming an organic layer covalently bonded to the nucleophilic groups,
wherein the organic layer comprises at least one organic material selected from the group consisting of:
N-(2-Aminoethyl)-3-aminopropyltrimethoxysilane;
(3-Trimethoxysilylpropyl) diethylenetriamine;
Cycloamin-silane 2,2-Dimethoxy-1,6-diaza-2-silacyclooctane;
Aminopropyltrimethoxysilane;
(Aminoethylaminomethyl) Phenethyltrimethoxysilane;
Bis(triethoxysilylpropyl)amine;
Bis(trimethoxysilylpropyl)amine;
N,N′-Bis(3-(trimethoxysilyl)propyl)ethylenediamine;
Bis(triethoxysilyl)ethane;
3-Amino-5-mercapto-1,2,4-triazole;
3-Mercaptopropyltrimethoxysilane; and
3-Mercaptopropyltriethoxysilane,

wherein the forming the organic layer comprises:
after the forming the nucleophilic groups, arranging a liquid encapsulation material, in which an organic material for forming the organic layer is dispersed, over the metal surface and in contact with the nucleophilic groups, to form the organic layer and an encapsulation layer over the organic layer.

2. The method of claim 1 , wherein the forming the nucleophilic groups comprises plasma treating the metal surface.

3. The method of claim 2 , wherein the plasma comprises at least one plasma selected from the group consisting of:
Ar/H 2 ;
Ar/H 2 /O 2 ;
H 2 /O 2 ;
N 2 /H 2 O;
NH 3 ; and
H 2 .

4. The method of claim 1 , wherein the nucleophilic groups comprise —OH-groups, —NH 2 -groups and/or —CN-groups.

5. The method of claim 1 , wherein the forming the organic layer comprises dipping in a solution, spray depositing, gas phase depositing, and/or plasma depositing.

6. The method of claim 1 , wherein the metal surface and a non-metal surface form a common outer surface, wherein the nucleophilic groups comprise a first portion of nucleophilic groups attached to the metal surface that is formed simultaneously with a second portion of nucleophilic groups attached to the non-metal surface.

7. The method of claim 1 , further comprising:
forming a layer structure that includes the organic layer; and
before or after forming the nucleophilic groups, forming an electrical contact to the metal surface.

8. The method of claim 7 , further comprising:
electrically connecting a chip to the metal surface of the layer structure; and
arranging an encapsulation material at least partially encapsulating the chip and the layer structure, wherein the encapsulation material is covalently bonded to the organic layer.

9. A method, comprising:
plasma-treating a metal surface with a hydrogen-containing plasma to form nucleophilic groups over the metal surface; and
forming an organic layer over the metal surface, wherein the organic layer comprises silane and is covalently bonded to the nucleophilic groups,

wherein the forming the organic layer comprises:
after the forming the nucleophilic groups, arranging a liquid encapsulation material, in which an organic material for forming the organic layer is dispersed, over the metal surface and in contact with the nucleophilic groups, to form the organic layer and an encapsulation layer over the organic layer.

10. The method of claim 9 , wherein the hydrogen-containing plasma comprises at least one plasma selected from the group consisting of:
Ar/H 2 ;
Ar/H 2 /O 2 ;
H 2 /O 2 ;
N 2 /H 2 O;
NH 3 ; and
H 2 .

11. The method of claim 9 , wherein the nucleophilic groups comprise —OH-groups, —NH 2 -groups and/or —CN-groups.

12. The method of claim 9 , wherein the forming the organic layer comprises dipping in a solution, spray depositing, gas phase depositing, and/or plasma depositing.

13. The method of claim 9 , wherein the metal surface and a non-metal surface form a common outer surface, wherein the nucleophilic groups comprise a first portion of nucleophilic groups attached to the metal surface that is formed simultaneously with a second portion of nucleophilic groups attached to the non-metal surface.

14. The method of claim 9 , further comprising:
forming a layer structure that includes the organic layer; and
before or after forming the nucleophilic groups, forming an electrical contact to the metal surface.

15. The method of claim 14 , further comprising:
electrically connecting a chip to the metal surface of the layer structure; and
arranging an encapsulation material at least partially encapsulating the chip and the layer structure, wherein the encapsulation material is covalently bonded to the organic layer.

Assignees

• Infineon Technologies Ag

Inventors

• Gatterbauer Johann
• Lehnert Wolfgang
• Mais Norbert
• Muhr Verena
• Riedl Edmund
• Sax Harry

Classifications

• H10P14/69391

  the material containing aluminium, e.g. Al2O3 · CPC title

• H10P14/683

  carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC · CPC title

• H10W74/114

  by a substrate and the encapsulations · CPC title

• H10W74/01

  Manufacture or treatment · CPC title

• H10W70/458

  of insulating layers on leadframes · CPC title