Dispersing element, method for manufacturing structure with conductive pattern using the same, and structure with conductive pattern

US11328835B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-11328835-B2
Application numberUS-202117213500-A
CountryUS
Kind codeB2
Filing dateMar 26, 2021
Priority dateMar 16, 2017
Publication dateMay 10, 2022
Grant dateMay 10, 2022

How to read this patent

A practical reading order for non-experts. Skip the full description unless you need deep technical detail.

  1. Title

    What the patent document calls the invention.

  2. Abstract

    A short plain-language summary of the technical disclosure.

  3. Assignees and inventors

    Who owns or filed the patent and who is credited as inventor.

  4. Key dates

    Filing, priority, publication, and grant dates set the timeline.

  5. First independent claim

    The legal scope of protection — read this for what is actually claimed.

  6. CPC / IPC classifications

    Technology tags used to group this patent with similar filings.

  7. Citations and related patents

    Prior art links and similar publications in this corpus.

Abstract

Official abstract text for this publication.

A conductive pattern having high dispersion stability and a low resistance over a board is formed. A dispersing element (1) contains a copper oxide (2), a dispersing agent (3), and a reductant. Content of the reductant is in a range of a following formula (1). Content of the dispersing agent is in a range of a following formula (2).0.0001≤(reductant mass/copper oxide mass)≤0.10  (1)0.0050≤(dispersing agent mass/copper oxide mass)≤0.30  (2)The dispersing element containing the reductant promotes reduction of copper oxide to copper in firing and promotes sintering of the copper.

First claim

Opening claim text (preview).

The invention claimed is: 1. A structure with a conductive pattern comprising: a board; a cuprous-oxide-containing layer formed on a surface of the board; and a conductive layer formed on a surface of the cuprous-oxide-containing layer, wherein the conductive layer is a wiring having a wire width of 1 μm or more to 1000 μm or less, and the wiring contains a reduced copper. 2. The structure with the conductive pattern according to claim 1 , wherein the conductive layer or the conductive pattern has a surface having a surface roughness of 500 nm or more to 4000 nm or less. 3. The structure with the conductive pattern according to claim 1 , wherein the wiring is usable as an antenna. 4. The structure with the conductive pattern according to claim 1 , wherein the conductive layer or the conductive pattern has a surface on which a solder layer is partially formed. 5. A structure with a conductive pattern comprising: a board; and a conductive pattern formed on a surface of the board, wherein the conductive pattern is a wiring having a wire width of 1 μm or more to 1000 μm or less, and the wiring contains a reduced copper, a phosphorus, and a void. 6. A structure with a conductive pattern comprising: a board; and a conductive pattern formed on the board surface, wherein the conductive pattern is a wiring having a wire width of 1 μm or more to 1000 μm or less, the wiring contains a reduced copper, a copper oxide, and a phosphorus, and a resin is disposed so as to cover the wiring. 7. A method for manufacturing a structure with a conductive pattern comprising: a step of applying a dispersing element over a board to form an application film; and a step of irradiating the application film with laser light to form a conductive pattern on the board, wherein the dispersing element includes a copper oxide, a dispersing agent, and a reductant, wherein content of the reductant is in a range of a following formula (1), and wherein content of the dispersing agent is in a range of a following formula (2): 0.0001≤(reductant mass/copper oxide mass)≤0.10  (1) 0.0050≤(dispersing agent mass/copper oxide mass)≤0.30  (2). 8. The method for manufacturing the structure with the conductive pattern according to claim 7 , wherein after the application film is formed on a transfer body, the application film is transferred from the transfer body to the board to form the application film on the board. 9. The method for manufacturing the structure with the conductive pattern according to claim 7 , wherein the conductive pattern is an antenna. 10. The method for manufacturing the structure with the conductive pattern according to claim 9 , wherein the conductive pattern has a mesh shape. 11. The method for manufacturing the structure with the conductive pattern according to claim 7 , further comprising a step of forming a solder layer on a part of a surface of the conductive pattern. 12. The method for manufacturing the structure with the conductive pattern according to claim 11 , wherein on the conductive pattern, an electronic component is soldered via the solder layer by a reflow method. 13. The method for manufacturing the structure with the conductive pattern according to claim 7 , wherein the dispersing agent is a phosphorus-containing organic matter.

Assignees

Inventors

Classifications

  • by conversion of non-conductive material on or in the support into conductive material, e.g. by using an energy beam · CPC title

  • Firing or sintering at relative high temperatures for patterns on inorganic boards, e.g. co-firing of circuits on green ceramic sheets · CPC title

  • for manufacturing extensible conductors or cables · CPC title

  • H01B1/22Primary

    the conductive material comprising metals or alloys · CPC title

  • Alloys based on copper · CPC title

Patent family

Related publications grouped by family.

External sources

Frequently asked questions

Answers are generated from the same data shown on this page.

What does patent US11328835B2 cover?
A conductive pattern having high dispersion stability and a low resistance over a board is formed. A dispersing element (1) contains a copper oxide (2), a dispersing agent (3), and a reductant. Content of the reductant is in a range of a following formula (1). Content of the dispersing agent is in a range of a following formula (2).0.0001≤(reductant mass/copper oxide mass)≤0.10  (1)0.0050≤(disp…
Who is the assignee on this patent?
Asahi Chemical Ind
What technology area does this patent fall under?
Primary CPC classification H01B1/22. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue May 10 2022 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).