Electro-optical modulator and methods of formation thereof

Patent metadata

Field	Value
Publication number	US-11327346-B2
Application number	US-201916539503-A
Country	US
Kind code	B2
Filing date	Aug 13, 2019
Priority date	Aug 31, 2018
Publication date	May 10, 2022
Grant date	May 10, 2022

Abstract

In one embodiment, an electro-optical modulator includes a waveguide having a first major surface and a second major surface opposite the first major surface. A cavity is disposed in the waveguide. Multiple quantum wells are disposed in the cavity.

First claim

What is claimed is:

1. An electro-optical modulator comprising:
a waveguide configured to transmit light in a first direction, the waveguide comprising a first major surface and a second major surface opposite the first major surface,
a cavity disposed in the waveguide, wherein the cavity has sidewalls inclined with respect to the normal to the second major surface of the waveguide, and wherein a normal to the sidewalls is along a second direction orthogonal to the first direction, and
multiple quantum wells disposed in the cavity.

2. The modulator of claim 1 , wherein the cavity is a through cavity extending from the first major surface of the waveguide to the second major surface of the waveguide.

3. The modulator of claim 1 , wherein the multiple quantum wells comprises layers oriented, along the sidewalls, at a different angle than the normal to the second major surface of the waveguide.

4. The modulator of claim 1 , wherein the waveguide comprises a first semiconductor region and a second semiconductor region, wherein the cavity is disposed between the first semiconductor region and the second semiconductor region, the first and the second semiconductor regions being doped with different conductivity types, and wherein the first and the second semiconductor regions are made of silicon.

5. The modulator of claim 1 , wherein the multiple quantum wells comprise alternating layers of first quantum barrier layers and second quantum well layers.

6. The modulator of claim 5 , wherein the first quantum barrier layers are made of silicon-germanium, the second quantum well layers are made of germanium.

7. The modulator of claim 5 , wherein each of the first quantum barrier layers and second quantum well layers is flush with the second major surface of the waveguide.

8. The modulator of claim 5 , wherein the waveguide rests on and is in contact with a third layer, the third layer being an insulating layer of a structure of semiconductor-on insulator type.

9. The modulator of claim 1 , wherein the waveguide comprises a band configured to guide an optical signal propagating through the waveguide.

10. The modulator of claim 9 , wherein the cavity is disposed in an intermediate portion of the band.

11. A photonic circuit comprising the modulator of claim 1 .

12. The modulator of claim 1 , wherein the waveguide further comprises:
a band oriented along the first direction and configured to guide an optical signal propagating through the waveguide, the band comprising an upstream portion, an intermediate portion, and a downstream portion, the cavity being disposed in an intermediate portion of the band.

13. The modulator of claim 12 , wherein the waveguide further comprises:
a first strip oriented along the first direction and disposed on a first side of the band; and
a second strip oriented along the first direction and disposed on a second side of the band, the band, the first and the second strips being disposed in a silicon layer of a substrate.

14. An electro-optical modulator comprising a waveguide configured to transmit light in a first direction, the waveguide comprising:
a silicon-on-insulator substrate;
a band oriented along the first direction and comprising an upstream portion, an intermediate portion, and a downstream portion;
a first strip oriented along the first direction and disposed on a first side of the band;
a second strip oriented along the first direction and disposed on a second side of the band, the band, the first and the second strips being disposed in a silicon layer of the silicon-on-insulator substrate;
a cavity disposed in the intermediate portion of the band;
an epitaxial first quantum barrier layer comprising silicon and germanium disposed on sidewalls of the cavity; and
an epitaxial first quantum well layer comprising germanium disposed on sidewalls of the first quantum barrier layer.

15. The modulator of claim 14 , further comprising:
an epitaxial second quantum barrier layer comprising silicon and germanium disposed on sidewalls of the first quantum well layer; and
an epitaxial second quantum well layer comprising germanium disposed on sidewalls of the second quantum barrier layer.

16. The modulator of claim 14 , wherein the cavity is a through cavity extending from a first major surface of the silicon layer of the silicon-on-insulator substrate to a second major surface of the silicon layer of the silicon-on-insulator substrate.

17. An electro-optical modulator comprising a waveguide configured to transmit light in a first direction, the waveguide comprising:
a band oriented along the first direction and comprising an upstream portion, an intermediate portion, and a downstream portion;
a first strip oriented along the first direction and disposed on a first side of the band;
a second strip oriented along the first direction and disposed on a second side of the band, the band, the first and the second strips being disposed in a silicon layer of a substrate;
a cavity disposed in the intermediate portion of the band, the cavity comprising slanted sidewalls, wherein a normal to the slanted sidewalls is along a second direction orthogonal to the first direction; and
multiple quantum wells disposed in the cavity.

18. The modulator of claim 17 , wherein the substrate comprises an insulator layer disposed between the silicon layer and a bulk silicon substrate, and wherein the cavity is a through cavity extending from a first major surface of the silicon layer of the substrate to a second major surface of the silicon layer of the substrate.

19. The modulator of claim 18 , wherein the multiple quantum wells comprises layers oriented, along the slanted sidewalls, at a different angle than the normal to the second major surface of the silicon layer of the substrate.

20. The modulator of claim 17 , wherein the multiple quantum wells comprise alternating layers of first quantum barrier layers and second quantum well layers.

21. The modulator of claim 20 , wherein the first quantum barrier layers are made of silicon-germanium, the second quantum well layers are made of germanium.

Assignees

• St Microelectronics Crolles 2 Sas

Inventors

• Baudot Charles

Classifications

• H10P14/3211

  Silicon, silicon germanium or germanium · CPC title

• H10P14/2905

  Silicon, silicon germanium or germanium · CPC title

• G02F1/0121

  Operation of devices; Circuit arrangements, not otherwise provided for in this subclass · CPC title

• B82Y20/00

  Nanooptics, e.g. quantum optics or photonic crystals · CPC title

• G02F1/01791

  Quantum boxes or quantum dots · CPC title