Porous polyurethane polishing pad and method for manufacturing same

Patent metadata

Field	Value
Publication number	US-11325222-B2
Application number	US-201816462180-A
Country	US
Kind code	B2
Filing date	Jan 9, 2018
Priority date	Jan 12, 2017
Publication date	May 10, 2022
Grant date	May 10, 2022

Abstract

An embodiment relates to a porous polyurethane polishing pad for use in a chemical mechanical planarization (CMP) process of semiconductors and a process for preparing the same. In the porous polyurethane polishing pad, the polishing performance (or polishing rate) thereof can be controlled by adjusting the size and distribution of pores in the polishing pad.

First claim

The invention claimed is:

1. A porous polyurethane polishing pad, which is prepared from a reaction mixture comprising a urethane-based prepolymer and a curing agent, and has a thickness of 1.5 to 2.5 mm, an average pore diameter of 10 to 40 μm, a specific gravity of 0.7 to 0.9 g/cm 3 , a surface hardness at 25° C. of 50 to 65 Shore D, a tensile strength of 15 to 25 N/mm 2 , an elongation of 80 to 250%, a total area of pores of 30 to 60% based on the total area of the polishing pad, and a breakdown voltage of 14 to 23 kV,
wherein the reaction mixture further comprises one or more solid phase foaming agents in an amount of 0.5 to 10 parts by weight based on 100 parts by weight of the urethane-based prepolymer,
wherein the porous polyurethane polishing pad has first pores and second pores, the second pores comprise second-first pores and second-second pores, and
wherein the diameter of second-first pores, which occupy 5 to 45% of the total area of the second pores, is smaller than the average diameter of the first pores by 5 μm or more, and the diameter of second-second pores, which occupy 5 to 45% of the total area of the second pores, is larger than the average diameter of the first pores by 5 μm or less.

2. The porous polyurethane polishing pad of claim 1 , wherein the one or more solid phase foaming agents have an average particle diameter of 10 to 50 μm, and the porous polyurethane polishing pad has a breakdown voltage of 14 to 22 kV.

3. The porous polyurethane polishing pad of claim 1 , wherein the reaction mixture further comprises a reaction rate controlling agent.

4. The porous polyurethane polishing pad of claim 3 , wherein the first pores are formed from the one or more solid phase foaming agents, and the second pores are formed from an inert gas.

5. The porous polyurethane polishing pad of claim 3 , wherein the one or more solid phase foaming agents comprise a first solid phase foaming agent and a second solid phase foaming agent, and
wherein the first pores are formed from the first solid phase foaming agent and the second pores are formed from the second solid phase foaming agent having an average particle diameter different from that of the first solid phase foaming agent.

6. The porous polyurethane polishing pad of claim 3 , wherein the reaction rate controlling agent comprises at least one selected from the group consisting of triethylene diamine, dimethyl ethanol amine, tetramethyl butane diamine, 2-methyl-triethylene diamine, dimethyl cyclohexyl amine, triethyl amine, triisopropanol amine, bis(2-methylaminoethyl) ether, trimethylaminoethylethanol amine, N,N,N,N,N″-pentamethyldiethylene triamine, dimethylaminoethyl amine, dimethylaminopropyl amine, benzyldimethyl amine, N-ethylmorpholine, N,N-dimethylaminoethylmorpholine, N,N-dimethylcyclohexyl amine, 2-methyl-2-azanorbornane, dibutyltin dilaurate, stannous octoate, dibutyltin diacetate, dioctyltin diacetate, dibutyltin maleate, dibutyltin di-2-ethylhexanoate, and dibutyltin bis (lauryl mercaptide).

7. The porous polyurethane polishing pad of claim 1 , wherein the urethane-based prepolymer is prepared by reacting an isocyanate compound with a polyol, and the curing agent comprises at least one selected from the group consisting of an amine compound and an alcohol compound.

8. A process for preparing a porous polyurethane polishing pad, which comprises:
(1) injecting a mixture comprising a urethane-based prepolymer, a curing agent, and one or more solid phase foaming agents into a mold and molding the mixture; and
(2) curing the mixture,
wherein the one or more solid phase foaming agents are employed in an amount of 0.5 to 10 parts by weight based on 100 parts by weight of the urethane-based prepolymer, and
the porous polyurethane polishing pad has a thickness of 1.5 to 2.5 mm, an average pore diameter of 10 to 40 μm, a specific gravity of 0.7 to 0.9 g/cm 3 , a surface hardness at 25° C. of 50 to 65 Shore D, a tensile strength of 15 to 25 N/mm 2 , an elongation of 80 to 250%, a total area of pores of 30 to 60% based on the total area of the polishing pad, and a breakdown voltage of 14 to 23 kV,
wherein the porous polyurethane polishing pad has first pores and second pores, the second pores comprise second-first pores and second-second pores, and
wherein the diameter of second-first pores, which occupy 5 to 45% of the total area of the second pores, is smaller than the average diameter of the first pores by 5 μm or more, and the diameter of second-second pores, which occupy 5 to 45% of the total area of the second pores, is larger than the average diameter of the first pores by 5 μm or less.

9. The process for preparing a porous polyurethane polishing pad of claim 8 , wherein, in the step (1), an inert gas is fed into the mold when the mixture is injected into the mold, and the inert gas is fed in a volume of 20 to 35% based on the total volume of the mixture.

10. The process for preparing a porous polyurethane polishing pad of claim 9 , wherein the mixture further comprises a reaction rate controlling agent, and the reaction rate controlling agent is at least one selected from the group consisting of a tertiary amine-based compound and an organometallic compound.

11. The process for preparing a porous polyurethane polishing pad of claim 10 , wherein the reaction rate controlling agent comprises at least one selected from the group consisting of triethylene diamine, dimethyl ethanol amine, tetramethyl butane diamine, 2-methyl-triethylene diamine, dimethyl cyclohexyl amine, triethyl amine, triisopropanol amine, bis(2-methylaminoethyl) ether, trimethylaminoethylethanol amine, N,N,N,N,N″-pentamethyldiethylene triamine, dimethylaminoethyl amine, dimethylaminopropyl amine, benzyldimethyl amine, N-ethylmorpholine, N,N-dimethylaminoethylmorpholine, N,N-dimethylcyclohexyl amine, 2-methyl-2-azanorbornane, dibutyltin dilaurate, stannous octoate, dibutyltin diacetate, dioctyltin diacetate, dibutyltin maleate, dibutyltin di-2-ethylhexanoate, and dibutyltin bis (lauryl mercaptide).

Assignees

• Skc Solmics Co Ltd

Inventors

• Heo Hye Young
• Seo Jang Won
• Han Hyuk Hee

Classifications

• H10P52/403

  of conductive or resistive materials · CPC title

• H10P52/00

  Grinding, lapping or polishing of wafers, substrates or parts of devices · CPC title

• H10P95/062

  involving a dielectric removal step · CPC title

• B29C44/02

  for articles of definite length, i.e. discrete articles · CPC title

• C08G2101/00

  Manufacture of cellular products · CPC title