Disilylamine compound, method for preparing the same, and composition for depositing silicon-containing thin film including the same

Patent metadata

Field	Value
Publication number	US-11319333-B2
Application number	US-201816606168-A
Country	US
Kind code	B2
Filing date	Apr 19, 2018
Priority date	Apr 20, 2017
Publication date	May 3, 2022
Grant date	May 3, 2022

Abstract

Provided are a novel disilylamine compound, a method for preparing same, and a composition for depositing a silicon-containing thin film including the same. A disilylamine compound of the present invention has excellent reactivity, is thermally stable, and has high volatility, and thus, is used as a silicon-containing precursor, thereby manufacturing a high-quality silicon-containing thin film.

First claim

The invention claimed is:

1. A disilylamine compound represented by the following Chemical Formula 1 is represented by the following Chemical Formula 2:

wherein R 1 to R 6 are each independently hydrogen, C1-C7 alkyl or C2-C7 alkenyl;

wherein R 11 to R 14 are each independently hydrogen, C1-C7 alkyl or C2-C7 alkenyl.

2. The disilylamine compound of claim 1 , wherein the disilylamine compound of Chemical Formula 2 is selected from the group consisting of the following compounds:

3. A method for preparing a disilylamine compound, comprising:
reacting a compound of the following Chemical Formula 3 and a compound of the following Chemical Formula 4 in the presence of a base to prepare a compound of the following Chemical Formula 5; and
reducing the compound of Chemical Formula 5 in the presence of a reducing agent to prepare the disilylamine compound of the following Chemical Formula 1:

wherein R 1 to R 6 are each independently hydrogen, C1-C7 alkyl or C2-C7 alkenyl; and
X 1 to X 6 are each independently halogen.

4. The method of claim 3 , wherein the base is tri(C1-C5) alkylamine or pyridine, and the reducing agent is LiAlH 4 , NaBH 4 or MH, wherein M is an alkali metal.

5. The method of claim 3 , wherein the base and the compound of Chemical Formula 4 are used at a mole ratio of 1:1 to 1:2, and the reducing agent and the compound of Chemical Formula 5 are used at a mole ratio of 1:1.25 to 1:6.0.

6. The method of claim 3 , wherein the compound of Chemical Formula 4 is used at 1 mole to 2 mole relative to 1 mole of the compound of Chemical Formula 3.

7. A composition for depositing a silicon-containing thin film, comprising the disilylamine compound of claim 1 .

8. A method for manufacturing a silicon-containing thin film, using the composition of claim 7 .

9. The method of claim 8 , wherein the method is performed by atomic layer deposition, chemical vapor deposition, metal organic chemical vapor deposition, low pressure chemical vapor deposition, plasma-enhanced chemical vapor deposition or plasma-enhanced atomic layer deposition.

10. The method of claim 8 , comprising:
a) maintaining a temperature of a substrate mounted in a chamber to 30 to 400° C.;
b) injecting a carrier gas and the composition of claim 7 ; and
c) injecting a reaction gas to deposit the silicon-containing thin film on the substrate.

11. The method of claim 10 , wherein the reaction gas is any one or two or more selected from the group consisting of oxygen, ozone, distilled water, hydrogen peroxide, nitrogen monoxide, nitrous oxide, nitrogen dioxide, ammonia, nitrogen, hydrazine, amine, diamine, carbon monoxide, carbon dioxide, C 1 to C 12 saturated or unsaturated hydrocarbon, hydrogen, argon and helium.

Assignees

• Dnf Co Ltd

Inventors

• Kim Sung Gi
• Jang Se Jin
• Yang Byeong-Il
• Park Joong Jin
• Lee Sang-Do
• Park Jeong Joo
• Lee Sam Dong
• Park Gun-Joo
• Lee Sang Ick
• Kim Myong Woon

Classifications

• C23C16/30

  Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides · CPC title

• C23C16/45553

  characterized by the use of precursors specially adapted for ALD · CPC title

• C23C16/402

  Silicon dioxide · CPC title

• C23C16/345

  Silicon nitride · CPC title

• C23C16/45536

  Use of plasma, radiation or electromagnetic fields · CPC title