Fabrication of superconducting devices that control direct currents and microwave signals

Patent metadata

Field	Value
Publication number	US-11317519-B2
Application number	US-201816160347-A
Country	US
Kind code	B2
Filing date	Oct 15, 2018
Priority date	Oct 15, 2018
Publication date	Apr 26, 2022
Grant date	Apr 26, 2022

Abstract

Fabrication of superconducting devices that combine or separate direct currents and microwave signals is provided. A method can comprise forming a direct current circuit that supports a direct current, a microwave circuit that supports a microwave signal, and a common circuit that supports the direct current and the microwave signal. The method can also comprise operatively coupling a first end of the direct current circuit and a first end of the microwave circuit to a first end of the common circuit. The direct current circuit can comprise a bandstop circuit and the microwave circuit can comprise a capacitor. Alternatively, the direct current circuit can comprise a bandstop circuit and the microwave circuit can comprise a bandpass circuit. Alternatively, the microwave circuit can comprise a capacitor and the direct current circuit can comprise one or more quarter-wavelength transmission lines.

First claim

What is claimed is:

1. A method comprising:
forming a direct current circuit that supports a direct current, a microwave circuit that supports a microwave signal, and a common circuit that supports the direct current and the microwave signal, wherein the direct current circuit comprises a bandstop circuit, and wherein the microwave circuit comprises a capacitor;
operatively coupling a first end of the direct current circuit and a first end of the microwave circuit to a first end of the common circuit;
patterning a first superconducting film, deposited on a wafer, with a first portion of the direct current circuit and a first portion of the microwave circuit;
patterning a dielectric film deposited on the first superconducting film; and
patterning a second superconducting film, deposited on the dielectric film, with a second portion of the direct current circuit, a second portion of the microwave circuit, and the common circuit.

2. The method of claim 1 , further comprising forming the bandstop circuit with a bandstop filter that supports the direct current and blocks microwave signals that are within a bandwidth range of a superconducting device.

3. The method of claim 1 , wherein the operatively coupling the first end of the common circuit comprises:
forming a common node at the first end of the common circuit; and
operatively coupling the first end of the direct current circuit and the first end of the microwave circuit to the common node.

4. The method of claim 3 , further comprising:
operatively coupling a second end of the direct current circuit to a direct current port, a second end of the microwave circuit to a microwave port, and a second end of the common circuit to a common port, wherein the direct current port supports the direct current, the microwave port supports the microwave signal, and the common port supports the direct current and the microwave signal.

5. The method of claim 1 , wherein the patterning of the first superconducting film comprises patterning of the first superconducting film with a direct current port that supports the direct current, a microwave port that supports the microwave signal; and a common port that supports the microwave signal and the direct current.

6. The method of claim 1 , wherein the patterning the first superconducting film comprises patterning the first superconducting film with a direct current port that supports the direct current and a common port that supports the microwave signal and the direct current, and wherein the patterning the second superconducting film comprises patterning a microwave port that supports the microwave signal.

7. The method of claim 1 , further comprising:
depositing the first superconducting film at a first thickness, the dielectric film at a second thickness, and the second superconducting film at a third thickness, wherein the third thickness is greater than the first thickness and the second thickness.

8. The method of claim 1 , wherein the patterning further comprises:
patterning the first superconducting film, deposited on the wafer, with the common circuit.

9. The method of claim 8 , wherein the patterning of the first superconducting film comprises patterning the first superconducting film with a direct current port that supports the direct current, a microwave port that supports the microwave signal; and a common port that supports the microwave signal and the direct current.

10. The method of claim 8 , wherein the patterning of the first superconducting film comprises patterning the first superconducting film with a direct current port that supports the direct current and a common port that supports the microwave signal and the direct current, and wherein the patterning the second superconducting film comprises patterning a microwave port that supports the microwave signal.

Assignees

• IBM

Inventors

• Abdo Baleegh
• Brink Markus

Classifications

• H05K3/4644 Primary

  by building the multilayer layer by layer, i.e. build-up multilayer circuits (making via holes in the insulating layers H05K3/0011; special circuit boards as base or core whereon the multilayer is built H05K3/4602) · CPC title

• H01P5/12 Primary

  Coupling devices having more than two ports (H01P5/04 takes precedence) · CPC title

• H01P11/001

  Manufacturing waveguides or transmission lines of the waveguide type · CPC title

• H01P1/2039

  Galvanic coupling between Input/Output · CPC title

• H03H7/46

  Networks for connecting several sources or loads, working on different frequencies or frequency bands, to a common load or source · CPC title