High throughput insulation of 3D in-silicon high volumetric energy and power dense energy storage devices

Patent metadata

Field	Value
Publication number	US-11316154-B2
Application number	US-201916702151-A
Country	US
Kind code	B2
Filing date	Dec 3, 2019
Priority date	Dec 3, 2019
Publication date	Apr 26, 2022
Grant date	Apr 26, 2022

Abstract

A three dimensional (3D) In-Silicon energy storage device is provided by a method that includes forming a thick dielectric material layer on a surface of a silicon based substrate. A 3D trench is then formed into the dielectric material layer and the silicon based substrate, and thereafter a dielectric material spacer is formed, in addition to the dielectric remaining on the field of the substrate, as well as along a sidewall of the 3D trench, and on a first portion of a sub-surface of the silicon based substrate that is present at a bottom of the 3D trench. A second portion of the sub-surface of the silicon based substrate that is present in the 3D trench remains physically exposed. Active energy storage device materials can then be formed laterally adjacent to the dielectric material spacer that is within the 3D trench and on the dielectric material layer.

First claim

What is claimed is:

1. A three dimensional (3D) In-Silicon energy storage device comprising:
a semiconductor-containing housing structure comprising at least one 3D trench present in a dielectric material layer and a silicon based substrate, and a dielectric material spacer present in the at least one 3D trench and located on a sidewall of both the dielectric material layer and the silicon based substrate, wherein the dielectric material spacer has a surface that contacts a first portion of a sub-surface of the silicon based substrate, and the dielectric material layer has a thickness of greater than 0.40 μm; and
active energy storage device materials located laterally adjacent to the dielectric material spacer that is present in the at least one 3D trench and on the dielectric material layer, wherein one of the active energy storage device materials is in direct physical contact with a second portion of the sub-surface of the silicon based substrate.

2. The 3D In-Silicon energy storage device of claim 1 , wherein the second portion of the sub-surface of the silicon based substrate is non-textured.

3. The 3D In-Silicon energy storage device of claim 1 , wherein the second portion of the sub-surface of the silicon based substrate is textured.

4. The 3D In-Silicon energy storage device of claim 1 , wherein sub-surface of the silicon based substrate is pre-lithiated to include a layer of lithium metal.

5. The 3D In-Silicon energy storage device of claim 4 , wherein the silicon based substrate is composed of non-porous silicon, partially porous crystalline silicon, single-crystal non-porous silicon, crystalline silicon, boron doped crystalline silicon or boron doped crystalline porous silicon.

6. The 3D In-Silicon energy storage device of claim 4 , wherein the silicon based substrate is composed of a low resistance doped crystalline silicon that comprises a top porous layer having a first thickness and a first porosity, a bottom porous layer having a second thickness that is greater than the first thickness, and a second porosity that is greater than the first porosity, and a non-porous region that is located beneath, and forms an interface with, the bottom porous layer.

7. The 3D In-Silicon energy storage device of claim 1 , wherein the dielectric material layer and the dielectric material spacer are composed of a compositionally same dielectric material.

8. The 3D In-Silicon energy storage device of claim 1 , wherein the active energy storage device materials are components of all solid-state lithium ion battery.

9. The 3D In-Silicon energy storage device of claim 8 , wherein the lithium ion battery comprises at least a solid-state electrolyte and a cathode material composed of a lithium-containing material; wherein the 3D In-Silicon energy storage device has a volumetric power density of greater than, or equal to, 1500 uW cm −2 mm −1 .

10. The 3D In-Silicon energy storage device of claim 8 , wherein the lithium ion battery comprises at least a solid-state electrolyte and a cathode material composed of a lithium-containing material, wherein the 3D In-Silicon energy storage device has a volumetric energy density of greater than, or equal to, 4 uWh cm −2 mm −1 .

Assignees

• IBM

Inventors

• Collins John
• Papalia John M
• Rath David L
• Sadana Devendra K

Classifications

• H01M4/134

  Electrodes based on metals, Si or alloys · CPC title

• H01M10/0562

  Solid materials · CPC title

• H01M4/131

  Electrodes based on mixed oxides or hydroxides, or on mixtures of oxides or hydroxides, e.g. LiCoOx · CPC title

• H01M4/1395

  of electrodes based on metals, Si or alloys · CPC title

• H01M10/0525

  Rocking-chair batteries, i.e. batteries with lithium insertion or intercalation in both electrodes; Lithium-ion batteries · CPC title