Semiconductor device

Patent metadata

Field	Value
Publication number	US-11315850-B2
Application number	US-201716085921-A
Country	US
Kind code	B2
Filing date	Aug 24, 2017
Priority date	Aug 24, 2017
Publication date	Apr 26, 2022
Grant date	Apr 26, 2022

Abstract

A semiconductor device according to an embodiment is attached to a radiator and includes a heat-generating electronic component, a sealing part sealing the electronic component, a lead member that includes an inner lead part sealed with the sealing part and an outer lead part exposed from the sealing part, and a lead member that includes an inner lead part sealed with the sealing part and an outer lead part exposed from the sealing part. The inner lead part has a heat-dissipating end part that releases heat propagating from the outer lead part to the radiator and an electrical connecting part that is positioned between the heat-dissipating end part and the outer lead part and is electrically connected to the main electrode of the electronic component.

First claim

The invention claimed is:

1. A semiconductor device comprising:
an insulating substrate;
a first conductor layer formed on the insulating substrate;
a second conductor layer formed on the insulating substrate;
an electronic element provided on the first conductor layer;
a first lead member connected to the second conductor layer;
a second lead member connected to the first conductor layer; and
a sealing part that seals the first conductor layer, the second conductor layer and the electronic element, wherein
the first lead member has an inner lead part arranged inside the sealing part and an outer lead part arranged outside the sealing part,
the inner lead part has a base part that is connected to the outer lead part, a first extension part that extends from the base part toward the second conductor layer and is connected to the second conductor layer, and a second extension part that extends from the base part toward the electronic element and is connected to the electronic element without directly connecting to the second conductor layer, the base part, the first extension part and the second extension part are formed integrally, and
the first lead member is configured to release heat propagating from the outer lead part to an outside of the sealing part through the first extension part, the second conductor layer and the insulating substrate.

2. A semiconductor device comprising:
an electronic element having a first electrode and a second electrode;
a first lead member electrically connected to the first electrode;
a second lead member electrically connected to the second electrode;
a connecting member that electrically connects the first electrode and the first lead member; and
a sealing part that seals the electronic element and the connecting member, wherein
the first lead member has an inner lead part arranged inside the sealing part and an outer lead part arranged outside the sealing part,
the inner lead part has a base part that is connected to the outer lead part, and an extension part that extends from the base part toward an end face of the sealing part,
an end part of the extension part is exposed to an outside of the sealing part,
the base part and the extension part are formed integrally,
the first lead member is configured to release heat propagating from the outer lead part to an outside of the sealing part through the extension part, and
the connecting member is arranged across the base part of the inner lead part and the first electrode of the electronic element.

3. The semiconductor device according to claim 1 , further comprising a third conductor layer formed on a surface of the insulating substrate, the surface being opposite to a surface on which the first and second conductor layer are formed, and the third conductor layer being exposed to an outside of the sealing part.

4. The semiconductor device according to claim 1 , wherein the inner lead part has two of the first extension part on a first side and a second side of the second extension part.

5. The semiconductor device according to claim 1 , wherein the first extension part extends from the base part in a first direction orthogonal to a second direction along which the base part extends, and a tip side part of the first extension part extends along the second direction.

6. The semiconductor device according to claim 2 , wherein the extension part extends from the base part in a first direction orthogonal to a second direction along which the base part extends, and a tip side part of the extension part extends along the second direction.

Assignees

• Shindengen Electric Mfg

Inventors

• Sasaki Mitsumasa

Classifications

• H10W90/766

  between a chip and a stacked lead frame, conducting package substrate or heat sink · CPC title

• H10W74/114

  by a substrate and the encapsulations · CPC title

• H10W74/111

  the semiconductor body being completely enclosed · CPC title

• H10W70/479

  on or in insulating or insulated package substrates, interposers, or redistribution layers · CPC title

• H10W90/701

  characterised by the relative positions of pads or connectors relative to package parts · CPC title